Abstract: A wafer polishing head according to the invention is disclosed. In the wafer polishing head, an automatic control device is additionally installed outside the wafer polishing head for automatically adjusting a pressure applied on a retaining ring. This ensures the bottom of the retaining ring always lower than that of a carrier, thereby preventing a semiconductor wafer from slip during polishing. Furthermore, a liquid pressure generated to press the carrier can efficiently alleviate wabble during polishing. Therefore, the wafer polishing head of the invention can greatly improve a polishing uniformity.

Abstract: A wafer stage includes a bottom insulator plate secured on a bottom portion of the processing chamber; a central pedestal plate mounted on the bottom insulator plate; and a removable top insulator cover having a chamber fittingly accommodating the central pedestal plate and the bottom insulator plate, wherein the top insulator cover has a flat top surface on which a wafer is placed.

Abstract: A chemical mechanical polishing device used to polish a wafer according to the present invention includes a polishing table, a polishing pad, a slurry supply device, a wafer carrier and a high-pressure liquid cleaning device. The polishing pad is disposed on the polishing table to polish the wafer. The slurry supply device is disposed on the polishing table to supply the slurry. In addition, the wafer carrier is disposed the polishing table to carry the wafer in such a manner that the wafer is brought into contact with the polishing pad. Besides, the high-pressure cleaning device is disposed on the polishing table to remove the impurities on the polishing pad by high-pressure liquid.

Abstract: An auxiliary gasline-heating unit is used in a chemical vapor deposition apparatus. The auxiliary gasline-heating unit serves to increase the exit temperature of the mixture of N2 gas and He-dilute gas in order to prevent TDMAT, Ti[N(CH3)2]4, from being condensed and becoming a gasline contaminant when the mixture mixes with the TDMAT and a carrier gas.

Abstract: An auxiliary gasline-heating unit is used in a chemical vapor deposition apparatus. The auxiliary gasline-heating unit serves to increase the exit temperature of the mixture of N2 gas and He-dilute gas in order to prevent TDMAT, Ti[N(CH3)2]4, from being condensed and becoming a gasline contaminant when the mixture mixes with the TDMAT and a carrier gas.

Abstract: An auxiliary gasline-heating unit is used in a chemical vapor deposition apparatus. The auxiliary gasline-heating unit serves to increase the exit temperature of the mixture of N2 gas and He-dilute gas in order to prevent TDMAT, Ti[N(CH3)2]4, from being condensed and becoming a gasline contaminant when the mixture mixes with the TDMAT and a carrier gas.

Abstract: A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.

Abstract: A slurry mixing apparatus has a mixing chamber, a rotatable bearing and several blades. The bearing is connected to one end of each of the blades and located in the center of the mixing chamber. Several kinds of the slurries can be mixed rapidly in the apparatus and flowed into the CMP polisher immediately to perform a CMP process. Being mixed by the mixing chamber, the slurry is supplied to the chemical mechanical polisher for polishing.

Abstract: A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.

Abstract: A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.

Abstract: A wafer polishing head for planarizing a wafer. The wafer polishing head comprises a carrier, a retaining ring, a first pressure chamber, a second pressure chamber and an automatic control system. The retaining ring is surrounding the carrier. The first pressure chamber having a first inner pressure is disposed above the retaining ring. The second pressure chamber having a second inner pressure is disposed on the carrier. The automatic control system is respectively coupled to the first pressure chamber and the second pressure chamber.

Abstract: A wafer polishing head for planarizing a wafer. The wafer polishing head comprises a carrier, a retaining ring, a first pressure chamber, a second pressure chamber and an automatic control system. The retaining ring is surrounding the carrier. The first pressure chamber having a first inner pressure is disposed above the retaining ring. The second pressure chamber having a second inner pressure is disposed on the carrier. The automatic control system is respectively coupled to the first pressure chamber and the second pressure chamber.

Abstract: A method for increasing the working life of retaining rings in a chemical-mechanical polishing machine. The method includes adding an extra pad between a retaining ring and a carrier so that the retaining ring is prevented from slippage and pressure on wafer can be evenly spread over the polishing pad of a polishing machine. Therefore, the rate at which a retaining ring wears out in chemical-mechanical polishing operation can be greatly reduced, and the working life of a retaining ring can be doubled.

Abstract: A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.

Abstract: A chemical-liquid controlling apparatus is described. The chemical-liquid controlling apparatus is mounted between a chemical-liquid container and an exhaust apparatus. During a chemical-liquid refilling process, once the chemical liquid is drawn out of the container by the exhaust apparatus, the chemical liquid first enters the chemical-liquid controlling apparatus. The chemical-liquid controlling apparatus separates the chemical liquid from a nitrogen gas and a chemical gas. In addition, the chemical-liquid refilling process is stopped by a signal transmitted from a leak sensor.

Abstract: The invention provides a chemical-mechanical polishing pad, which includes a plurality of annular grooves and a plurality of streamline grooves designed according to principles of the hydrodynamics. The streamline grooves of polishing pad are designed according to flow equations derived from source flow and vortex flow, and the streamline grooves of polishing pad uniformly distribute the slurry on the polishing pad. An angle and a depth of the streamline groove, which are calculated by boundary layer effect of the streamline groove function, are used to design an optimum structure for polishing pad.

Abstract: An auto brush pressure cleaning system is described. The system includes a first pneumatic brush, a second pneumatic brush disposed to align with the first pneumatic brush adjacent and parallel to the first pneumatic brush, and a computer. The system also includes a first brush pressure regulator electrically coupled to the computer and transmitting a first and a second signal to the computer and a second brush pressure regulator coupled to the second pneumatic brush and the first brush pressure regulator through a first three-way valve and electrically coupled to the computer, wherein the second pneumatic brush transmits a third signal to the second brush pressure regulator and to the first brush pressure regulator and the second brush pressure regulator transmits a fourth signal to the computer.

Abstract: A chemical-mechanical polishing (CMP) apparatus includes a filtering apparatus for filtering slurry. The filtering apparatus includes an input aperture located at the top of the filter housing and connected to a slurry supplying machine. An output aperture located at the side of the filter housing is connected to a polishing pad. The filtering apparatus also includes a filter attached to the top of the filter housing and a stirring objected located below the filter. A stirrer is located below the filter housing for driving the stirring object without a mechanical contact. The stirring object is preferably bar-shaped and enclosed with PTFE.

Abstract: A CMP machine includes several polishing tables mounted on a carousel, which rotates in one direction. Each of the polishing tables includes a polishing pad. Each polishing pad can polish one wafer on its first surface. Each polishing pad also has one distributing duct used to supply slurry onto the polishing pad. An exhaust duct is included to exhaust slurry, in which the exhaust duct has a first end and a second end. The first end of the exhaust duct is coupled to slurry. A regulating valve is included to regulate slurry exhaust. An exhaust pump is included to produce a exhausting force of slurry. The exhaust pump is coupled to the second end of the exhaust duct. A regulating valve controller is included to control the regulating valve.

Abstract: A chemical-mechanical polishing machine having an improved wafer retainer ring design for the polishing head, comprising a polishing table, a polishing pad, a polishing head and a wafer retainer ring, wherein the polishing pad is above the polishing table, the polishing head is above the polishing pad, and the wafer retainer ring is mounted onto the polishing head. Improvement of the retainer ring design includes the formation of a plurality of guiding holes around the periphery of the retainer ring such that the guiding hole axis follows the centrifugal line produced by a rotating polishing head. Furthermore, the guiding hole has a gradual diffusing structure from the outer inlet to the inner outlet.