Abstract: The present disclosure provides an electrolytic module unit based on a boron-doped diamond (BDD) electrode, including a water flow guide module and an electrolytic module. The electrolytic module is provided within the water flow guide module. The electrolytic module includes a BDD electrode including a main body portion and a plurality of branch portions disposed on two sides of the main body portion. The main body portion and the plurality of branch portions on two sides of the main body portion constitute a fishbone-like structure. The BDD electrode of the electrolytic module unit is of the fishbone-like structure.

Abstract: The present disclosure provides an electrolytic module unit based on a boron-doped diamond (BDD) electrode, including a water flow guide module and an electrolytic module. The electrolytic module is provided within the water flow guide module. The electrolytic module includes a BDD electrode including a main body portion and a plurality of branch portions disposed on two sides of the main body portion. The main body portion and the plurality of branch portions on two sides of the main body portion constitute a fishbone-like structure. The BDD electrode of the electrolytic module unit is of the fishbone-like structure.

Abstract: The present application provides a long-wave infrared anti-reflection protective film on a ZnS substrate and a preparation method thereof, wherein the ZnS substrate long-wave infrared anti-reflection protective film comprises a ZnS film layer and a Y2O3 film layer sequentially arranged on the ZnS substrate. The ZnS substrate has a thickness of 2-15 mm, and the ZnS film layer has a thickness of 80-120 nm, the Y2O3 film layer has a thickness of 1000-1300 nm, and a film structure of Y2O3 layer gradually changes from an inside to a surface. The method for preparing a long-wave infrared anti-reflection protective film on a ZnS substrate comprises the following steps: 1) performing a polishing treatment and surface treatment on the ZnS substrate; 2) depositing a ZnS film layer on the ZnS substrate; 3) depositing a Y2O3 film layer on the ZnS film.

Abstract: The present application provides a long-wave infrared anti-reflection protective film on a ZnS substrate and a preparation method thereof, wherein the ZnS substrate long-wave infrared anti-reflection protective film comprises a ZnS film layer and a Y2O3 film layer sequentially arranged on the ZnS substrate. The ZnS substrate has a thickness of 2-15 mm, and the ZnS film layer has a thickness of 80-120 nm, the Y2O3 film layer has a thickness of 1000-1300 nm, and a film structure of Y2O3 layer gradually changes from an inside to a surface. The method for preparing a long-wave infrared anti-reflection protective film on a ZnS substrate comprises the following steps: 1) performing a polishing treatment and surface treatment on the ZnS substrate; 2) depositing a ZnS film layer on the ZnS substrate; 3) depositing a Y2O3 film layer on the ZnS film.

Abstract: The present invention intends to transform Short Message Service (SMS) messages into a commercially viable medium on which bulk amount of information can be disseminated. To achieve this objective, a system is disclosed to publish location-sensitive SMS messages to groups of non-predetermined receivers. This system embodies functionality to accompany the full cycles of the SMS message distribution, from creation, through processing, until publication. It leverages existing wireless infrastructure and the Internet establishment. Based on the present invention, new commercial services can be developed, such as real-time yellow-page services over wireless spectrum.