Abstract: Embodiments of 3D memory structures and methods for forming the same are disclosed. A method for forming a three-dimensional (3D) memory structure includes forming a dielectric layer on a substrate and forming a first plurality of openings in the dielectric layer at a staircase region of the 3D memory structure. The method also includes forming a second plurality of openings in the dielectric layer at a peripheral device region of the 3D memory structure and forming at least one hard mask layer in the first plurality of openings of the staircase region and in the second plurality of openings of the peripheral device region. The method further includes etching the dielectric layer using the at least one hard mask layer to form first and second pluralities of via extension regions in top portions of the respective first and second pluralities of openings.

Abstract: Embodiments of 3D memory structures and methods for forming the same are disclosed. A method for forming a three-dimensional (3D) memory structure includes forming a dielectric layer on a substrate and forming a first plurality of openings in the dielectric layer at a staircase region of the 3D memory structure. The method also includes forming a second plurality of openings in the dielectric layer at a peripheral device region of the 3D memory structure and forming at least one hard mask layer in the first plurality of openings of the staircase region and in the second plurality of openings of the peripheral device region. The method further includes etching the dielectric layer using the at least one hard mask layer to form first and second pluralities of via extension regions in top portions of the respective first and second pluralities of openings.

Abstract: Embodiments of 3D memory structures and methods for forming the same are disclosed. A method for forming a three-dimensional (3D) memory structure includes forming a dielectric layer on a substrate and forming a first plurality of openings in the dielectric layer at a staircase region of the 3D memory structure. The method also includes forming a second plurality of openings in the dielectric layer at a peripheral device region of the 3D memory structure and forming at least one hard mask layer in the first plurality of openings of the staircase region and in the second plurality of openings of the peripheral device region. The method further includes etching the dielectric layer using the at least one hard mask layer to form first and second pluralities of via extension regions in top portions of the respective first and second pluralities of openings.

Abstract: Embodiments of 3D memory structures and methods for forming the same are disclosed. A method for forming a three-dimensional (3D) memory structure includes forming a dielectric layer on a substrate and forming a first plurality of openings in the dielectric layer at a staircase region of the 3D memory structure. The method also includes forming a second plurality of openings in the dielectric layer at a peripheral device region of the 3D memory structure and forming at least one hard mask layer in the first plurality of openings of the staircase region and in the second plurality of openings of the peripheral device region. The method further includes etching the dielectric layer using the at least one hard mask layer to form first and second pluralities of via extension regions in top portions of the respective first and second pluralities of openings.

Abstract: The present invention provides an ionic liquid or plastic crystal comprising an anion and a cation, the anion comprising [C(SO2F)3]?, and the cation comprising at least one member selected from the group consisting of 1-ethyl-3-methylimidazolium ([EMI]+), N,N-diethyl-N-methyl-(2-methoxyethyl)ammonium ([DEME]+), N-methyl-N-propylpyrrolidinium ([Py13]+), N-methyl-N-propylpiperidinium ([PP13]+), tetramethylammonium ([N1111]+), tetraethylammonium ([N2222]+), trimethylhexylammonium ([N6111]+), triethylhexylammonium ([N6222]+), N-methyl-ethylpyrrolidinium ([Py12]+), 1-butyl-3-methylimidazolium ([C4mim]+), and 1-hexyl-3-methylimidazolium ([C6mim]+).

Abstract: An electrically conductive connecting member includes an electrically insulating elastomer and an electrically conducting elastomer. The conductive connecting member has a Shore Hardness type A from 5 to 90 degrees, water-resistant ability up to 0.1 kgf/cm2 and 10%˜20% compression set. The conductive connecting member is capable of remaining good resilience, water-resistance and electric conductivity after long term use.