Abstract: A structure of a longitudinal leaky surface acoustic wave (LL-SAW) resonator and a filter includes a substrate, a piezoelectric thin film provided on the substrate, and an electrode array provided on the piezoelectric thin film, where the electrode array includes an interdigital transducer (IDT) array and a reflector grating electrode array; and a center distance between reflector grating electrodes in the reflector grating electrode array is less than a center distance between IDTs in the IDT array. Based on a nonstandard reflector (NSR) grating structure provided by the embodiments of the present disclosure, by reducing the center distance between the reflector grating electrodes in the reflector grating electrode array, the present disclosure can improve a reflective frequency range of the reflector grating electrode array, thereby suppressing a spurious mode of the LL-SAW, and improving performance of the LL-SAW resonator.

Abstract: The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby.

Abstract: The present disclosure provides a high frequency surface acoustic wave resonator and a method for making the same. The high frequency surface acoustic wave resonator includes: a high wave velocity supporting substrate, a piezoelectric film disposed on a top surface of the high wave velocity supporting substrate, and a top electrode disposed on a top surface of the piezoelectric film; a velocity of a body wave propagating in the high wave velocity supporting substrate is greater than a velocity of a target elastic wave propagating in the piezoelectric film. The conductivity of the high wave velocity supporting substrate is greater than 1E3 ?·cm. The high frequency surface acoustic wave resonator and the method for making the same of the present disclosure solve the problem that the operating frequency of the traditional surface acoustic wave resonator is low.

Abstract: The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby.

Abstract: The present disclosure provides a high frequency surface acoustic wave resonator and a method for making the same. The high frequency surface acoustic wave resonator includes: a high wave velocity supporting substrate, a piezoelectric film disposed on a top surface of the high wave velocity supporting substrate, and a top electrode disposed on a top surface of the piezoelectric film; a velocity of a body wave propagating in the high wave velocity supporting substrate is greater than a velocity of a target elastic wave propagating in the piezoelectric film. The conductivity of the high wave velocity supporting substrate is greater than 1E3 ?·cm. The high frequency surface acoustic wave resonator and the method for making the same of the present disclosure solve the problem that the operating frequency of the traditional surface acoustic wave resonator is low.