Patents by Inventor Pengfa Xu

Pengfa Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic memory element with iridium anti-ferromagnetic coupling layer
    Patent number: 10032979
    Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: July 24, 2018
    Assignee: Avalanche Technology, Inc.
    Inventors: Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang, Bing K. Yen, Xiaojie Hao, Pengfa Xu
  • MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
    Publication number: 20180076384
    Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof.
    Type: Application
    Filed: November 17, 2017
    Publication date: March 15, 2018
    Inventors: Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang, Bing K. Yen, Xiaojie Hao, Pengfa Xu