Abstract: The disclosure provides a control method and a device for an air conditioner. The method includes: a first reward matrix is constructed according to multiple sets of target operating parameters of an air conditioner, a maximum expected benefit of performing a current action in a current state is calculated based on the first reward matrix and a Q-learning algorithm, wherein the current state is represented by a current indoor environment temperature and a current outdoor environment temperature; target action parameters under the maximum expected benefit are acquired, and operation of the air conditioner is controlled based on second target action parameters, wherein the second target action parameters at least include a second target operating frequency of the compressor, a second target opening degree of the electronic expansion valve and a second target rotating speed of the external fan.

Abstract: A quantitative evaluation method for integrity and damage evolution of a cement sheath in an oil-gas well is provided based on a fractal theory, an image processing technology, structural features and failure mechanisms of a casing-cement sheath-formation combination. The method uses correlations among fractal dimensions of casing-cement sheath interface morphology, cement sheath microscopic pore morphology, particle morphology of an initial blank group, and macroscopic mechanical properties including a radial cementing strength of the cement sheath interface, a tensile strength, and a compressive strength to quantitatively evaluate the integrity of the cement sheath of the blank group.

Abstract: Disclosed is a method for preparing structured graphene on a SiC substrate on the basis of Cl2 reaction, the procedures are as follows: firstly, performing standard cleaning to a SiC sample chip; depositing a layer of SiO2 on the surface of the SiC sample chip and engraving a figure window on the SiO2 layer; then arranging the windowed sample chip in a quartz tube, introducing a mixed gas of Ar and Cl2 into the quartz tube, reacting the bare SiC with Cl2 for 3-8 min at 700-1100° C. to generate a carbon film; arranging the generated carbon film in Ar gas, annealing for 10-30 min at 1000-1200° C. to generate the structured graphene on the window on the carbon film. The method is simple and safe; the generated structured graphene has a smooth surface and low porosity and can be used for making microelectronic devices.

Abstract: Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl4vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl4 vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene.

Abstract: Provided is a conversion method for key operations on a non-touch screen terminal unit, involving the steps of: detecting a click action on a target key on the terminal unit, and acquiring the ID information of the target key; searching position information corresponding to the ID information in a preset profile according to the ID information; and, generating a touch screen event at the position indicated by the position information on the display screen of the terminal unit. With the present method, application programs developed for touch screens can run on non-touch screen terminal units compatibly, and thereby the compatibility of the terminal units is improved.

Abstract: The embodiments of the present invention disclose a conversion method for key operations on anon-touch screen terminal unit, comprising: detecting a click action on a target key on the terminal unit, and acquiring the ID information of the target key; searching position information corresponding to the ID information in a preset profile according to the ID information; and, generating a touch screen event at the position indicated by the position information on the display screen of the terminal unit. With the present invention, application programs developed for touch screens can run on non-touch screen terminal units compatibly, and thereby the compatibility of the terminal units is improved.

Abstract: A method for preparing graphene by reaction with Cl2 based on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950° C.-1150° C. gradually, supplying C3H8 and carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150° C.-1350° C. rapidly, supplying C3H8 and SiH4, growing a 3C—SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of H2 gradually, introducing the grown sample wafer of 3C—SiC into a quartz tube, heating to 700-1100° C., supplying mixed gas of Ar and Cl2, and reacting Cl2 with 3C—SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900° C.-1100° C.

Abstract: Disclosed is a method for preparing structured graphene on a SiC substrate on the basis of Cl2 reaction, the procedures are as follows: firstly, performing standard cleaning to a SiC sample chip; depositing a layer of SiO2 on the surface of the SiC sample chip and engraving a figure window on the SiO2 layer; then arranging the windowed sample chip in a quartz tube, introducing a mixed gas of Ar and Cl2 into the quartz tube, reacting the bare SiC with Cl2 for 3-8 min at 700-1100° C. to generate a carbon film; arranging the generated carbon film in Ar gas, annealing for 10-30 min at 1000-1200° C. to generate the structured graphene on the window on the carbon film. The method is simple and safe; the generated structured graphene has a smooth surface and low porosity and can be used for making microelectronic devices.

Abstract: Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl4vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl4 vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene.