Abstract: A battery module includes a plurality of cells, an end plate, and a side plate. The end plate and the side plate define an accommodating area, and the plurality of cells are sequentially arranged in the accommodating area. The side plate is provided with an avoidance notch configured to avoid a crossbeam or longitudinal beam of a lower casing, and the cells are arranged to avoid a position in the accommodating area corresponding to the avoidance notch, so that the battery module is mounted across the crossbeam or the longitudinal beam of the lower casing.

Abstract: A support member for a battery pack is provided. The battery pack includes a case and a cell component arranged in the case, and the cell component includes a top cover and a pole arranged on the top cover. The support member is configured to be arranged between the top cover and the case, to define an avoidance part between the pole and the case. The support member includes an upper support rib and a lower support rib connected with each other, the upper support rib is configured to abut against the top cover, and the lower support rib is configured to abut against the case.

Abstract: Disclosed is a BIPV module, comprising a stack of a front light-transmitting plate, a power generation layer set, a bus wiring layer and a rear light-transmitting plate, wherein one of the rear light-transmitting plate and the front light-transmitting plate is provided with a pattern layer coated with color glaze at a side thereof close to the other one of the front light-transmitting plate and the rear light-transmitting plate, the bus wiring layer is attached onto the power generation layer set to form a pin, and the power generation layer set and the bus wiring layer are encapsulated between the front and rear light-transmitting plates by an encapsulation adhesive.

Abstract: A method for synthesis of silicon nanowires provides a growth reactor having a decomposition zone and a deposition zone. A precursor gas introduced into the decomposition zone is disassociated to form an activated species that reacts with catalyst materials located in the deposition zone to deposit nano-structured materials on a low melting point temperature substrate in the deposition zone. A decomposition temperature in the decomposition zone is greater than a melting point temperature of the low melting point temperature substrate. The silicon nanowire are grown directly on the low melting point temperature substrate in the deposition zone to prevent the higher temperatures in the decomposition zone from damaging the molecular structure and/or integrity of the lower melting point temperature substrate located in the deposition zone.

Abstract: Nanotube devices and approaches therefore involve the formation and/or implementation of substantially semiconducting single-walled nanotubes. According to an example embodiment of the present invention, substantially semiconducting single-walled nanotubes couple circuit nodes in an electrical device. In some applications, semiconducting and metallic nanotubes having a diameter in a threshold range are exposed to an etch gas that selectively etches the metallic nanotubes, leaving substantially semiconducting nanotubes coupling the circuit nodes.

Abstract: A method for synthesis of silicon nanowires provides a growth reactor having a decomposition zone and a deposition zone. A precursor gas introduced into the decomposition zone is disassociated to form an activated species that reacts with catalyst materials located in the deposition zone to deposit nano-structured materials on a low melting point temperature substrate in the deposition zone. A decomposition temperature in the decomposition zone is greater than a melting point temperature of the low melting point temperature substrate. The silicon nanowire are grown directly on the low melting point temperature substrate in the deposition zone to prevent the higher temperatures in the decomposition zone from damaging the molecular structure and/or integrity of the lower melting point temperature substrate located in the deposition zone.

Abstract: A method for synthesis of silicon nanowires provides a growth reactor having a decomposition zone and a deposition zone. A precursor gas introduced into the decomposition zone is disassociated to form an activated species that reacts with catalyst materials located in the deposition zone to deposit nano-structured materials on a low melting point temperature substrate in the deposition zone. A decomposition temperature in the decomposition zone is greater than a melting point temperature of the low melting point temperature substrate. The silicon nanowire are grown directly on the low melting point temperature substrate in the deposition zone to prevent the higher temperatures in the decomposition zone from damaging the molecular structure and/or integrity of the lower melting point temperature substrate located in the deposition zone.

Abstract: A method for synthesis of silicon nanowires provides a growth reactor having a decomposition zone and a deposition zone. A precursor gas introduced into the decomposition zone is disassociated to form an activated species that reacts with catalyst materials located in the deposition zone to deposit nano-structured materials on a low melting point temperature substrate in the deposition zone. A decomposition temperature in the decomposition zone is greater than a melting point temperature of the low melting point temperature substrate. The silicon nanowire are grown directly on the low melting point temperature substrate in the deposition zone to prevent the higher temperatures in the decomposition zone from damaging the molecular structure and/or integrity of the lower melting point temperature substrate located in the deposition zone.

Abstract: A system of diagnosing a printer or photocopying system using a flexible diagnostic sheet is described. In the system, a thin diagnostic sheet including a plurality of sensors formed on the sheet is run through the paper path of the printing system. The printing system subjects the diagnostic sheet to the printing process, including the deposition of fuser oil and toner on the sheet. Sensors on the sheet record various parameters, including but not limited to the amount of fuser oil deposited and the charge on various toner particles. The information is transmitted to service personnel or the printer end user to enable timely repair of the printer.

Abstract: A system, including an improved sensor, for determining toner particle uniformity is described. The sensor measures toner particle charge, typically be having the charge on the toner particle control a current flow through the channel of a thin film transistor. By measuring the charge on many toner particles, the system determines whether sufficient toner degradation has occurred that the toner should be replaced. The sensor is particularly suitable for being formed on a thin diagnostic sheet that is input through the paper path of a printing system.

Abstract: A stress-engineered microspring is formed generally in the plane of a substrate. A nanowire (or equivalently, a nanotube) is formed at the tip thereof, also in the plane of the substrate. Once formed, the length of the nanowire may be defined, for example photolithographically. A sacrificial layer underlying the microspring may then be removed, allowing the engineered stresses in the microspring to cause the structure to bend out of plane, elevating the nanowire off the substrate and out of plane. Use of the nanowire as a contact is thereby provided. The nanowire may be clamped at the tip of the microspring for added robustness. The nanowire may be coated during the formation process to provide additional functionality of the final device.

Abstract: A stress-engineered microspring is formed generally in the plane of a substrate. A nanowire (or equivalently, a nanotube) is formed at the tip thereof, also in the plane of the substrate. Once formed, the length of the nanowire may be defined, for example photolithographically. A sacrificial layer underlying the microspring may then be removed, allowing the engineered stresses in the microspring to cause the structure to bend out of plane, elevating the nanowire off the substrate and out of plane. Use of the nanowire as a contact is thereby provided. The nanowire may be clamped at the tip of the microspring for added robustness. The nanowire may be coated during the formation process to provide additional functionality of the final device.

Abstract: One aspect of the invention involves an article of manufacture that includes a dielectric layer with an array of pores, and an array of nanowires at least partially contained within the array of pores. A respective nanowire in the array of nanowires is formed within a respective pore in the array of pores. Nanowires in the array of nanowires include a core semiconducting region with a first type of, a shell semiconducting region with a second type of doping, and a junction region between the core semiconducting region and the shell semiconducting. Additionally, the article of manufacture includes a first conducting layer electrically coupled to a plurality of shell semiconducting regions for a plurality of nanowires in the array of nanowires, as well as a second conducting layer electrically coupled to a plurality of core semiconducting regions for a plurality of nanowires in the array of nanowires.

Abstract: A stress-engineered microspring is formed generally in the plane of a substrate. A nanowire (or equivalently, a nanotube) is formed at the tip thereof, also in the plane of the substrate. Once formed, the length of the nanowire may be defined, for example photolithographically. A sacrificial layer underlying the microspring may then be removed, allowing the engineered stresses in the microspring to cause the structure to bend out of plane, elevating the nanowire off the substrate and out of plane. Use of the nanowire as a contact is thereby provided. The nanowire may be clamped at the tip of the microspring for added robustness. The nanowire may be coated during the formation process to provide additional functionality of the final device.

Abstract: A system of diagnosing a printer or photocopying system using a flexible diagnostic sheet is described. In the system, a thin diagnostic sheet including a plurality of sensors formed on the sheet is run through the paper path of the printing system. The printing system subjects the diagnostic sheet to the printing process, including the deposition of fuser oil and toner on the sheet. Sensors on the sheet record various parameters, including but not limited to the amount of fuser oil deposited and the charge on various toner particles. The information is transmitted to service personnel or the printer end user to enable timely repair of the printer.

Abstract: A system, including an improved sensor, for determining toner particle uniformity is described. The sensor measures toner particle charge, typically be having the charge on the toner particle control a current flow through the channel of a thin film transistor. By measuring the charge on many toner particles, the system determines whether sufficient toner degradation has occurred that the toner should be replaced. The sensor is particularly suitable for being formed on a thin diagnostic sheet that is input through the paper path of a printing system.

Abstract: Composite nanorod-based structures for generating electricity are disclosed. One embodiment is an article of manufacture that includes a first layer with an array of nanowires and a dielectric material. The nanowires include: a core semiconducting region with a first type of doping; a shell semiconducting region with a second type of doping; and a junction region between the core semiconducting region and the shell semiconducting region. The first type of doping is different from the second type of doping. The shell region length is less than the core region length. The shell semiconducting region surrounds a portion of the core semiconducting region over a length of the core semiconducting region corresponding to the junction region length. A second layer comprising a conducting material contacts the top surface of the first layer. A third layer comprising a conducting material contacts the bottom surface of the first layer.

Abstract: A stress-engineered microspring is formed generally in the plane of a substrate. A nanowire (or equivalently, a nanotube) is formed at the tip thereof, also in the plane of the substrate. Once formed, the length of the nanowire may be defined, for example photolithographically. A sacrificial layer underlying the microspring may then be removed, allowing the engineered stresses in the microspring to cause the structure to bend out of plane, elevating the nanowire off the substrate and out of plane. Use of the nanowire as a contact is thereby provided. The nanowire may be clamped at the tip of the microspring for added robustness. The nanowire may be coated during the formation process to provide additional functionality of the final device.