Abstract: Disclosed herein are self-mixing interference (SMI) sensors, frequency modulated continuous wave (FMCW) sensors, and electronic devices that include SMI and FMCW sensors. Both types of sensors include a photonic crystal surface-emitting laser diode. The SMI sensors include a photonic crystal surface-emitting laser diode configured to undergo SMI between a primary emitted light from the photonic crystal surface-emitting laser diode and reflections thereof from an object. The SMI sensor includes a photodetector configured to receive a secondary light emission from the photonic crystal surface-emitting laser diode and detect a parameter related to the SMI, from which distance or motion to the object may be inferred. The FMCW sensors include a photonic crystal surface-emitting laser diode configured to emit a primary light emission toward the object and a secondary light emission toward a light beam combiner.

Abstract: Embodiments described herein include an optoelectronic sensing device having a vertical cavity surface emitting laser (VCSEL), a resonance cavity photodetector (RCPD), and a tunnel junction. The VCSEL is at least partly defined by a first set of semiconductor layers disposed on a substrate. The first set of semiconductor layers includes a first active region. The VCSEL is configured to emit laser light towards the substrate, upon application of a first bias voltage, and undergo self-mixing interference upon reception of reflections or backscatters thereof. The RCPD is vertically adjacent to the VCSEL and is at least partly defined by a second set of semiconductor layers disposed on the substrate. The second set of semiconductor layers includes a second active region. The RCPD is configured to detect, upon application of a second bias voltage, the self-mixing interference. The tunnel junction is disposed between the first active region and the second active region.

Abstract: A naked-eye three-dimensional (3D) display device (600) is provided. The naked-eye 3D display device (600) comprises: a display component (610), comprising an array of display units (110); and a viewing angle regulator (620), comprising an array of microprism blocks (120, 620-1, 620-2, 620-3, 620-4, 620-5, 620-6). The microprism blocks (120, 620-1, 620-2, 620-3, 620-4, 620-5, 620-6) are divided into a plurality of groups, and an angle combination of a first angle (?1) and a second angle (?2) of each of the microprism blocks (120, 620-1, 620-2, 620-3, 620-4, 620-5, 620-6) is preset so that outgoing lights of the same group of microprism blocks converge into the same viewpoint, and outgoing lights of different groups of microprism blocks converge into different viewpoints. Hence, a plurality of different viewpoints are formed by setting angles of inclined surfaces of the microprism blocks (120, 620-1, 620-2, 620-3, 620-4, 620-5, 620-6), thereby seeing different 3D display effects from different viewing angles.

Abstract: Provided are a lithium nickel manganese oxide composite material, a preparation method thereof and a lithium ion battery. The preparation method includes: a first calcining process is performed on a nano-oxide and a nickel-manganese precursor, to obtain an oxide-coated nickel-manganese precursor; and a second calcining process is performed on the precursor and a lithium source material, to obtain the lithium nickel manganese oxide, and a temperature of the first calcining process is lower than the second calcining process. A a lower temperature, the nano-oxide may be melted, a denser nano-oxide coating layer is formed on the surface of the precursor, so the oxide-coated nickel-manganese precursor is obtained. At a higher temperature, the nano-oxide, a nickel-manganese material and a lithium element may be more deeply combined. A problem that the nano-oxide layer is easy to fall off is solved, and cycle performance of the lithium nickel manganese oxide is greatly improved.

Abstract: An optoelectronic apparatus includes a semiconductor substrate, an electrically activated spatial light modulator disposed on the semiconductor substrate, and a vertical-cavity surface-emitting laser (VCSEL) disposed over the spatial light modulator on the semiconductor substrate. A controller is coupled to actuate the VCSEL to emit a beam of optical radiation and to control the spatial light modulator so as to modify an optical property of the beam.

Abstract: An optoelectronic device may include a first set of distributed Bragg reflective (DBR) layers, a second set of DBR layers, a gain region, and an enclosure layer between the gain region and the second set of DBR layers. In some cases, the enclosure layer defines a non-limiting mode oxide aperture. The optoelectronic device may also include a high contrast grating (HCG) mirror element disposed on a side of the second set of DBR layers. In some cases, the HCG mirror element has a first reflection coefficient that is greater than a second reflection coefficient of the second set of DBR layers. Another optoelectronic device may include a photonic crystal (PhC) mirror layer and a gain region disposed between the PhC mirror layer and a set of DBR layers.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors that include a multi-junction (MJ) vertical-cavity surface-emitting laser (VCSEL) diode that emits laser light in two directions, one direction being directed toward a receiving photodiode and another toward an object. Reflections from the object induce self-mixing interference within a resonance cavity of the MJ-VCSEL altering a wavelength of the emitted laser light. The SMI may infer distance and/or motion of the object from the alterations in the wavelength. In various embodiments, the MJ-VCSEL and photodiode are successively formed as a single unit upon a single substrate. In other embodiments, the MJ-VCSEL and the photodiode may be formed on separate wafers or chips that are then joined at a common interface surface. Arrays of combinations of MJ-VCSELs and associated photodiodes may be included in an SMI.

Abstract: Self-mixing interferometry (SMI) sensors may include vertical cavity surface emitting lasers (VCSEL), photodetectors, and microelectromechanical systems (MEMS). The VCSEL, photodetectors, and MEMS may be vertically stacked. The MEMS may be moveable with respect to a VCSEL and may change a cavity length associated with the VCSEL. By changing the cavity length associated with the VCSEL, certain properties of emitted light may be changed, such as a wavelength value of the emitted light.

Abstract: A vertical cavity surface emitting laser (VCSEL) may include a top contact, wherein the top contact is associated with a particular shape, and wherein the particular shape is a toothed shape with a particular quantity of teeth. The VCSEL may include at least one implanted region. The VCSEL may include at least one top contact segment.

Abstract: Top emitting vertical cavity surface emitting lasers (VCSELs) are described with various top side optical gratings, etched into and/or fabricated over the VCSELs, to configure optical emission properties to suite a wide range of applications. Top side gratings are configured for spanning one or multiple emitters in any desired alignment/misalignment, using a wide range of refractive index materials and arrangements, levels of dimensionality (1D, 2D or 3D), forms of chirping of the grating, various grating periods, transmissive/reflective properties and in-plane coupling, ranges of diffractive orders, different relative amplitudes of transmitted and reflected orders, different polarizations, different levels of collimation, different levels of divergence, different diffraction and reflection, different beam diffusion, fixed or varied rotation of optical output, and far field engineering of the optical output.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) may include at least one layer forming a grating structure with a selected period, depth, and fill factor, wherein the period, the depth, and the fill factor of the grating structure are configured to achieve greater than a threshold level of efficiency for the VCSEL, less than a threshold current increase caused by power loss from higher order diffraction associated with the grating structure, and greater than a threshold polarization selectivity at an emission wavelength of the VCSEL.

Abstract: A vertical cavity surface emitting laser (VCSEL) may include a top contact, wherein the top contact is associated with a particular shape, and wherein the particular shape is a toothed shape with a particular quantity of teeth. The VCSEL may include at least one implanted region. The VCSEL may include at least one top contact segment.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) may include at least one layer forming a grating structure with a selected period, depth, and fill factor, wherein the period, the depth, and the fill factor of the grating structure are configured to achieve greater than a threshold level of efficiency for the VCSEL, less than a threshold current increase caused by power loss from higher order diffraction associated with the grating structure, and greater than a threshold polarization selectivity at an emission wavelength of the VCSEL.

Abstract: Vertical-cavity surface-emitting laser (VCSEL) structures are described which enable their use as widely wavelength-swept coherent light sources and multiple-wavelength VCSEL arrays. Three general configurations are described: (a) a semiconductor-cavity-dominant (SCD) with high reflection at the semiconductor-air interface, (b) an extended-cavity (EC) design in which reflections at the semiconductor-air interface is reduced to insignificance compared to the SCD design with a refractive index-matched layer (i.e., AR layer) so the entire structure resonates as one cavity, and (c) an air-cavity-dominant (ACD) design which facilitates a larger field confinement in the air gap, and the increased field confinement causes the air gap to be the dominant cavity.

Abstract: Vertical-cavity surface-emitting laser (VCSEL) structures are described which enable their use as widely wavelength-swept coherent light sources and multiple-wavelength VCSEL arrays. Three general configurations are described: (a) a semiconductor-cavity-dominant (SCD) with high reflection at the semiconductor-air interface, (b) an extended-cavity (EC) design in which reflections at the semiconductor-air interface is reduced to insignificance compared to the SCD design with a refractive index-matched layer (i.e., AR layer) so the entire structure resonates as one cavity, and (c) an air-cavity-dominant (ACD) design which facilitates a larger field confinement in the air gap, and the increased field confinement causes the air gap to be the dominant cavity.