Abstract: The present disclosure relates to the field of semiconductor device etching process, and specifically discloses an etching method and a semiconductor device. The etching method comprises: providing a substrate on which a film layer to be etched is formed; forming a mask layer structure on the film layer to be etched, wherein the mask layer structure includes a dielectric layer formed on an upper surface of the film layer to be etched and an APF layer formed on an upper surface of the dielectric layer; patterning the APF layer; performing a first etching process on the dielectric layer and the film layer to be etched by using the patterned APF layer as a mask to pattern the dielectric layer and partially etch the film layer to be etched; removing the patterned APF layer.

Abstract: The present disclosure relates to the field of semiconductor device etching process, and specifically discloses an etching method and a semiconductor device. The etching method comprises: providing a substrate on which a film layer to be etched is formed; forming a mask layer structure on the film layer to be etched, wherein the mask layer structure includes a dielectric layer formed on an upper surface of the film layer to be etched and an APF layer formed on an upper surface of the dielectric layer; patterning the APF layer; performing a first etching process on the dielectric layer and the film layer to be etched by using the patterned APF layer as a mask to pattern the dielectric layer and partially etch the film layer to be etched; removing the patterned APF layer.