Patents by Inventor Penglong XU

Penglong XU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240339522
    Abstract: In a manufacturing method for an LDMOS integrated device, a provided semiconductor substrate has an NLDMOS area and a PLDMOS area; then a dielectric layer on the NLDMOS area and a dielectric layer on the PLDMOS area are formed on the semiconductor substrate, and a stress material layer is formed on the dielectric layer on the NLDMOS area and/or on the dielectric layer on the PLDMOS area, the thickness of the dielectric layer on the NLDMOS region being greater than the thickness of the dielectric layer on the PLDMOS region; then heat treatment is performed to adjust the stress of the stress material layer, so as to improve the electron mobility of a device; then the stress material layer is removed.
    Type: Application
    Filed: December 1, 2022
    Publication date: October 10, 2024
    Inventors: Chaoqi XU, Shuxian CHEN, Chunxia MA, Yi ZHANG, Penglong XU, Feng LIN, Ruibin CAO