Abstract: The present invention discloses a preparation method of a germanium-based Schottky junction, comprising, cleaning a surface of N-type germanium-based substrate, then depositing a layer of CeO2 on the surface, and further depositing a layer of metal. The stability Ce—O—Ge bonds can be formed at the interface after rare earth oxides CeO2 are in contact with the germanium substrate, and this is beneficial to reduce the interface state density, improve the quality of the interface, and reduce the MIGS and suppress Fermi-level pinning. Meanwhile, the tunneling resistance introduced by CeO2 between the metal and the germanium substrate is smaller relative to the case of Si3N4, Al2O3, Ge3N4 or the like. In view of the excellent surface characteristics and small conduction band offset relative to the germanium substrate, interposing of the CeO2 dielectric layer is applicable to the preparation the germanium-based Schottky junction having a low resistivity.

Abstract: The present invention discloses a preparation method of a germanium-based Schottky junction, comprising, cleaning a surface of N-type germanium-based substrate, then depositing a layer of CeO2 on the surface, and further depositing a layer of metal. The stability Ce—O—Ge bonds can be formed at the interface after rare earth oxides CeO2 are in contact with the germanium substrate, and this is beneficial to reduce the interface state density, improve the quality of the interface, and reduce the MIGS and suppress Fermi-level pinning. Meanwhile, the tunneling resistance introduced by CeO2 between the metal and the germanium substrate is smaller relative to the case of Si3N4, Al2O3, Ge3N4 or the like. In view of the excellent surface characteristics and small conduction band offset relative to the germanium substrate, interposing of the CeO2 dielectric layer is applicable to the preparation the germanium-based Schottky junction having a low resistivity.

Abstract: The present invention discloses a method for processing a gate dielectric layer deposited on a germanium-based or Group III-V compound-based substrate, belonging to a semiconductor device field. The method comprises the steps of depositing a high-K gate dielectric layer on the germanium-based or Group III-V compound-based substrate, and then performing a plasma process to the high-K gate dielectric layer by using fluorine plasma, wherein during the plasma process, a guiding electric field is applied so that fluorine ions, when being accelerated to a surface of the gate dielectric layer, has an energy of 5-50 eV and the fluorine plasma drifts into the high-K gate dielectric layer, a ratio of a density of the fluorine ions in the high-K gate dielectric layer and a density of oxygen atoms in the high-K gate dielectric layer being 0.01-0.15:1.

Abstract: The present invention discloses a method for processing a gate dielectric layer deposited on a germanium-based or Group III-V compound-based substrate, belonging to a semiconductor device field. The method comprises the steps of depositing a high-K gate dielectric layer on the germanium-based or Group III-V compound-based substrate, and then performing a plasma process to the high-K gate dielectric layer by using fluorine plasma, wherein during the plasma process, a guiding electric field is applied so that fluorine ions, when being accelerated to a surface of the gate dielectric layer, has an energy of 5-50 eV and the fluorine plasma drifts into the high-K gate dielectric layer, a ratio of a density of the fluorine ions in the high-K gate dielectric layer and a density of oxygen atoms in the high-K gate dielectric layer being 0.01-0.15:1.