Abstract: Novel lithographic compositions for use as an EUV underlayer are disclosed. The invention includes methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an underlayer immediately below the photoresist layer. The underlayer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred underlayers are formed from spin-coatable, monomeric, oligomeric, and/or polymeric compositions and exhibit uniform thicknesses and low roughness. The disclosed method enables a 14/28 nm pattern using EUV lithography and better depth of focus (DOF) than standard EUV underlayers.