Patents by Inventor Pengxiao Sun

Pengxiao Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for evaluating thermal effect and reducing thermal crosstalk of three-dimensional integrated resistive switching memory
    Patent number: 10418549
    Abstract: A method for evaluating the thermal effects of 3D RRAM arrays and reducing thermal crosstalk, including the following steps: Step 1: calculating the temperature distribution in the array through 3D Fourier heat conduction equation; Step 2, selecting a heat transfer mode; Step 3, selecting an appropriate array structure; Step 4, analyzing the effect of position of programming device in the array on the temperature; Step 5, analyzing the thermal crosstalk effect in the array; Step 6, evaluating thermal effects and thermal crosstalk; Step 7, changing the array structure or modify operating parameters based on the evaluation results to reduce the thermal crosstalk.
    Type: Grant
    Filed: August 12, 2016
    Date of Patent: September 17, 2019
    Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Nianduan Lu, Pengxiao Sun, Ling Li, Ming Liu, Qi Liu, Hangbing Lv, Shibing Long
  • METHOD FOR IMPROVING ENDURANCE PERFORMANCE OF 3D INTEGRATED RESISTIVE SWITCHING MEMORY
    Publication number: 20190006584
    Abstract: A method for improving endurance of 3D integrated resistive switching memory, comprising: Step 1: Calculating the temperature distribution in the integrated array by the 3D Fourier heat conduction equation; Step 2, selecting heat transfer mode; Step 3: selecting an appropriate array structure; Step 4: analyzing the influence of integration degree on temperature in the array; Step 5: evaluating the endurance performance in the array; and Step 6: changing the array parameters according to the evaluation result to improve the endurance performance. According to the method of the present invention, based on the thermal transmission mode in the 3D integrated resistive switching device, a suitable 3D integrated array is selected to analyze the influence of the integration degree on the device temperature so as to evaluate and improve the endurance of the 3D integrated resistive switching device.
    Type: Application
    Filed: August 12, 2016
    Publication date: January 3, 2019
    Applicant: Institute of Microelectronics, Chinese Academy of Science
    Inventors: Nianduan LU, Pengxiao SUN, Ling LI, Ming IIU, Qi LIU, Hangbing LV, Shibing LONG
  • METHOD FOR EVALUATING THERMAL EFFECT AND REDUCING THERMAL CROSSTALK OF THREE-DIMENSIONAL INTEGRATED RESISTIVE SWITCHING MEMORY
    Publication number: 20180366643
    Abstract: A method for evaluating the thermal effects of 3D RRAM arrays and reducing thermal crosstalk, including the following steps: Step 1: calculating the temperature distribution in the array through 3D Fourier heat conduction equation; Step 2, selecting a heat transfer mode; Step 3, selecting an appropriate array structure; Step 4, analyzing the effect of position of programming device in the array on the temperature; Step 5, analyzing the thermal crosstalk effect in the array; Step 6, evaluating thermal effects and thermal crosstalk; Step 7, changing the array structure or modify operating parameters based on the evaluation results to reduce the thermal crosstalk.
    Type: Application
    Filed: August 12, 2016
    Publication date: December 20, 2018
    Applicant: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Nianduan Lu, Pengxiao Sun, Ling Li, Ming Iiu, Qi Liu, Hangbing Lv, Shibing Long