Patents by Inventor Pengzhen Zhang

Pengzhen Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10504731
    Abstract: The present invention provides a TFT substrate and a manufacturing method thereof. The manufacturing method of the TFT substrate according to the present invention includes additionally providing a transparent polypropylene film on an IGZO active layer to provide an effect of blocking UV light and thus preventing UV light from affecting stability of the IGZO active layer so as to improve stability of a TFT device without increasing the number of masks used. When the manufacturing method of the TFT substrate according to the present invention is applied to production of OLED display panels, the transparent polypropylene film may serve as a planarization layer so that the existing manufacturing process of OLED display panels does not need to be modified and manufacturing costs are not increased.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: December 10, 2019
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Pengzhen Zhang
  • Publication number: 20190074477
    Abstract: A method for manufacturing a flexible organic light-emitting diode (OLED) panel and an OLED panel are provided. The method includes providing an organic material substrate, depositing a protective metal layer over the organic material substrate, depositing a buffer layer over the protective metal layer using a high temperature plasma enhanced chemical vapor deposition (PECVD) process, and forming a semiconductor layer over the buffer layer. The protective metal layer prevents a manufacturing process of the buffer layer from contaminating a PECVD cavity and pipe.
    Type: Application
    Filed: November 1, 2017
    Publication date: March 7, 2019
    Applicant: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
    Inventor: Pengzhen Zhang
  • Patent number: 10224505
    Abstract: A method for manufacturing a flexible organic light-emitting diode (OLED) panel and an OLED panel are provided. The method includes providing an organic material substrate, depositing a protective metal layer over the organic material substrate, depositing a buffer layer over the protective metal layer using a high temperature plasma enhanced chemical vapor deposition (PECVD) process, and forming a semiconductor layer over the buffer layer. The protective metal layer prevents a manufacturing process of the buffer layer from contaminating a PECVD cavity and pipe.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: March 5, 2019
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventor: Pengzhen Zhang
  • Publication number: 20180337049
    Abstract: The present invention provides a TFT substrate and a manufacturing method thereof. The manufacturing method of the TFT substrate according to the present invention includes additionally providing a transparent polypropylene film on an IGZO active layer to provide an effect of blocking UV light and thus preventing UV light from affecting stability of the IGZO active layer so as to improve stability of a TFT device without increasing the number of masks used. When the manufacturing method of the TFT substrate according to the present invention is applied to production of OLED display panels, the transparent polypropylene film may serve as a planarization layer so that the existing manufacturing process of OLED display panels does not need to be modified and manufacturing costs are not increased.
    Type: Application
    Filed: December 27, 2016
    Publication date: November 22, 2018
    Inventor: Pengzhen Zhang
  • Patent number: 5634987
    Abstract: A method for the preparation of a two-phase magnetic material that includes as the major phase a crystalline alloy of one or more rare earth metals, boron and iron, substantially all of the crystallites of which have a size of less than 35 nanometers, and as the minor phase .alpha.-Fe, involves the steps of (i) melt spinning an alloy consisting of up to 12 atomic percent of one or more rare earth metals, 3 to 7 atomic percent of boron and the balance iron or a mixture of iron and cobalt; (ii) quenching the melt spun alloy form step (i) under conditions such that a mixture of crystalline and amorphous material is produced, (iii) subjecting the material from step (ii) to an annealing treatment under conditions such that controlled crystal growth occurs to provide the crystalline alloy phase, substantially all of which has a particle size of less than 35 nanometers, the resulting materials having a remanence in excess of the theoretical value of 0.8 Tesla.
    Type: Grant
    Filed: April 5, 1995
    Date of Patent: June 3, 1997
    Assignee: The University of Sheffield
    Inventors: Pengzhen Zhang, Robert A. Buckley, Hywel A. Davies, Azwar Manaf