Abstract: A downhole tool conveyable on a coiled tubing string. The downhole tool has: an electric actuator; one or more sensors; and a control unit adapted to receive and interpret data from the one or more sensors, wherein the control unit is adapted to operate the electric actuator in a closed-loop configuration based on data received from one or more of the sensors. A method of operating such a downhole tool.

Abstract: A multi-ingot furnace for the growth of crystalline semiconductor material has one or more heating devices for heating a hot zone in which crucibles containing semiconductor material are received. At least one of the heating devices is arranged to apply a predetermined differential heat flux profile across a horizontal cross-section of the semiconductor material in one or more of the crucibles, the predetermined differential heat flux profile being selected in dependence the position of the one or more crucibles in an array. In this manner, the heating device can at least partially compensate for differences in the temperature across the semiconductor material that arises from its geometric position in the furnace. This reduces the possibility of defects such as dislocations during the growth of a crystalline semiconductor material. Associated methods are also disclosed.

Abstract: A multi-ingot furnace for the growth of crystalline semiconductor material has one or more heating devices for heating a hot zone in which crucibles containing semiconductor material are received. At least one of the heating devices is arranged to apply a predetermined differential heat flux profile across a horizontal cross-section of the semiconductor material in one or more of the crucibles, the predetermined differential heat flux profile being selected in dependence the position of the one or more crucibles in an array. In this manner, the heating device can at least partially compensate for differences in the temperature across the semiconductor material that arises from its geometric position in the furnace. This reduces the possibility of defects such as dislocations during the growth of a crystalline semiconductor material. Associated methods are also disclosed.

Abstract: A process for the re-use of remainders or other residual Si of high purity silicon such as saw dust or kerf from manufacturing of solar cells wafers or semi-conductor devices, is characterized in that the dry kerf, chips and/or other residual Si from wafer production processes or semi-conductor devices is used as feedstock together with metallurgical grade silicon in a direct chlorination reactor (1) producing silicon tetrachloride, SiCl4. Unreacted kerf or other small particles that escape the reaction zone unreacted are repeatedly returned to the reactor for further chlorination regardless of their size.

Abstract: A process for casting a magnesium alloy consisting of 2.0-6.00% by weight of aluminium, 3.00-8.00% by weight of rare earth metals (RE-metals), the ratio of the amount of RE-metals to the amount of aluminium expressed as % by weight being larger than 0.8, at least 40% by weight of the RE-metals being cerium, less than 0.5% by weight of manganese, less than 1.00% by weight of zinc, less than 0.01% by weight of calcium less than 0.01% by weight of strontium and the balance being magnesium and unavoidable impurities, the total impurity level being below 0.1% by weight, wherein the alloy is cast in a die the temperature of which is controlled in the range of 180-340° C., the die is filled in a time which expressed in milliseconds is equal to the product of a number between 5 and 500 multiplied by the average part thickness expressed in millimeter, the static metal pressures being maintained during casting between 20-70 MPa and is subsequently intensified up to 180 MPa.

Abstract: A process for casting a magnesium alloy consisting of 10.00-13.00% by weight of aluminium, 0.00-10.00% by weight of zinc, and 5.00-13.00% by weight of aluminium, 10.00-22.00% by weight of zinc, also containing 0.10-0.5% by weight of manganese, and the balance being magnesium and unavoidable impurities, the total impurity level being below 0.0% by weight, wherein the alloy is cast in a die in which the temperature is controlled in the range of 150-340° C., the die is filled in a time which expressed in milliseconds is equal to the product of a number between 2 and 300 multiplied by the average part thickness expressed in millimetre, the static metal pressures being maintained during casting between 20-70 MPa and may subsequently be intensified up to 180 MPa.

Abstract: Salt composition for protecting, refining and/or recycling molten magnesium or magnesium alloys, where in that the salt composition consists of halogen ides of strontium, potassium, cesium or mixtures thereof.