Abstract: A method for calculating the parasitic capacitance and resistance in a semiconductor device is disclosed. According to the preferred embodiment, a layout file containing the shapes of semiconductor interconnects and a technology file describing the fabrication steps are used to generate a 3D model of the structures. The surfaces of the model are discretized and a double boundary integral equation is solved to compute the field allowing various interconnect parameters to be computed, including resistance, self-capacitance, cross-capacitance, and current density. Further, the preferred embodiment discloses how numerical analysis can be efficiently performed on typical large interconnect and substrate structures.

Abstract: A splicing device is provided for being fastened to one end of a cable wherein fibers/wires in the cable are connectable to the device. Further, the cable sheathing is brased to the device by a tightening procedure. The connection of the device to the cable is made under a controlled environmental condition, for instance, in a factory, during transport to the place of cable laying, or the like. The device is designed in a watertight design wherein the cable is allowed to be lowered down into water without further measures needing to be taken. The device further can be opened, in which connections for the measuring equipment are accessible. Measuring of the cable after that can be performed. The device is usable, for instance, in the laying of a submarine cable from cable ships. The device includes a splicing part and a measurement connection part. In the splicing part of the device, the fibers/wires of the cable are connected.

Abstract: A single-axis angular rate sensor is comprised of a transducer and associated electronics. The transducer consists of a symmetric planar inertia member supported by symmetrically disposed coplanar elastic beams. The inertia member is angularly oscillated about its center of gravity about a first axis. Rotation of the sensor about a third orthogonal axis results in Coriolis moments, causing angular oscillations about an orthogonal second axis. The angular oscillations about the second axis are restrained by means of voltages applied to electrostatic electrodes. These voltages are proportional to the angular input rate.