Patents by Inventor Perre Kao
Perre Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11488891Abstract: A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate. The method includes depositing a first-side UBM layer on a first surface of the semiconductor substrate. The method includes forming a plurality of first-side metal bumps on the first surface of the semiconductor substrate after the first-side UBM layer is deposited. The method includes forming a second-side UBM layer on a second side of the semiconductor substrate. The method includes forming a plurality of second-side metal bumps on the second surface of the semiconductor substrate after the second-side UBM layer is deposited. The method includes removing exposed first-side UBM layer and exposed second-side UBM layer after the plurality of first-side metal bumps and the plurality of second-side metal bumps are formed. The method includes reflowing the plurality of first-side metal bumps and the plurality of second side metal bumps.Type: GrantFiled: April 30, 2020Date of Patent: November 1, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: You-Hua Chou, Yi-Jen Lai, Chun-Jen Chen, Perre Kao
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Publication number: 20200258814Abstract: A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate. The method includes depositing a first-side UBM layer on a first surface of the semiconductor substrate. The method includes forming a plurality of first-side metal bumps on the first surface of the semiconductor substrate after the first-side UBM layer is deposited. The method includes forming a second-side UBM layer on a second side of the semiconductor substrate. The method includes forming a plurality of second-side metal bumps on the second surface of the semiconductor substrate after the second-side UBM layer is deposited. The method includes removing exposed first-side UBM layer and exposed second-side UBM layer after the plurality of first-side metal bumps and the plurality of second-side metal bumps are formed. The method includes reflowing the plurality of first-side metal bumps and the plurality of second side metal bumps.Type: ApplicationFiled: April 30, 2020Publication date: August 13, 2020Inventors: You-Hua CHOU, Yi-Jen LAI, Chun-Jen CHEN, Perre KAO
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Patent number: 10651111Abstract: A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate includes depositing a first-side UBM layer on a first surface of the substrate, and forming a plurality of first-side metal bumps on the first surface of the substrate after the first-side UBM layer is deposited. The method includes forming a second-side UBM layer on a second side of the substrate, and the first surface and the second surface are opposite of each other. The method includes forming a plurality of second-side metal bumps on the second surface of the substrate after the second-side UBM layer is deposited. The method includes removing exposed first-side UBM layer and exposed second-side UBM layer after the plurality of first-side metal bumps and the plurality of second-side metal bumps are formed. The method includes reflowing the plurality of first-side metal bumps and the plurality of second side metal bumps.Type: GrantFiled: February 6, 2018Date of Patent: May 12, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: You-Hua Chou, Yi-Jen Lai, Chun-Jen Chen, Perre Kao
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Publication number: 20180166361Abstract: A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate includes depositing a first-side UBM layer on a first surface of the substrate, and forming a plurality of first-side metal bumps on the first surface of the substrate after the first-side UBM layer is deposited. The method includes forming a second-side UBM layer on a second side of the substrate, and the first surface and the second surface are opposite of each other. The method includes forming a plurality of second-side metal bumps on the second surface of the substrate after the second-side UBM layer is deposited. The method includes removing exposed first-side UBM layer and exposed second-side UBM layer after the plurality of first-side metal bumps and the plurality of second-side metal bumps are formed. The method includes reflowing the plurality of first-side metal bumps and the plurality of second side metal bumps.Type: ApplicationFiled: February 6, 2018Publication date: June 14, 2018Inventors: You-Hua CHOU, Yi-Jen LAI, Chun-Jen CHEN, Perre KAO
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Patent number: 9899296Abstract: A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate includes depositing a first-side UBM layer on a first surface of the substrate, and forming a plurality of first-side metal bumps on the first surface of the substrate after the first-side UBM layer is deposited. The method includes forming a second-side UBM layer on a second side of the substrate, and the first surface and the second surface are opposite of each other. The method includes forming a plurality of second-side metal bumps on the second surface of the substrate after the second-side UBM layer is deposited. The method includes removing exposed first-side UBM layer and exposed second-side UBM layer after the plurality of first-side metal bumps and the plurality of second-side metal bumps are formed. The method includes reflowing the plurality of first-side metal bumps and the plurality of second side metal bumps.Type: GrantFiled: January 9, 2015Date of Patent: February 20, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: You-Hua Chou, Yi-Jen Lai, Chun-Jen Chen, Perre Kao
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Publication number: 20150125998Abstract: A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate includes depositing a first-side UBM layer on a first surface of the substrate, and forming a plurality of first-side metal bumps on the first surface of the substrate after the first-side UBM layer is deposited. The method includes forming a second-side UBM layer on a second side of the substrate, and the first surface and the second surface are opposite of each other. The method includes forming a plurality of second-side metal bumps on the second surface of the substrate after the second-side UBM layer is deposited. The method includes removing exposed first-side UBM layer and exposed second-side UBM layer after the plurality of first-side metal bumps and the plurality of second-side metal bumps are formed. The method includes reflowing the plurality of first-side metal bumps and the plurality of second side metal bumps.Type: ApplicationFiled: January 9, 2015Publication date: May 7, 2015Inventors: You-Hua CHOU, Yi-Jen LAI, Chun-Jen CHEN, Perre KAO
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Patent number: 8941232Abstract: The mechanisms for forming metal bumps to connect to a cooling device (or a heat sink) described herein enable substrates with devices to dissipate heat generated more efficiently. In addition, the metal bumps allow customization of bump designs to meet the needs of different chips. Further, the usage of metal bumps between the semiconductor chip and cooling device enables advanced cooling by passing a cooling fluid between the bumps.Type: GrantFiled: February 24, 2011Date of Patent: January 27, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: You-Hua Chou, Yi-Jen Lai, Chun-Jen Chen, Perre Kao
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Publication number: 20120217628Abstract: The mechanisms for forming metal bumps to connect to a cooling device (or a heat sink) described herein enable substrates with devices to dissipate heat generated more efficiently. In addition, the metal bumps allow customization of bump designs to meet the needs of different chips. Further, the usage of metal bumps between the semiconductor chip and cooling device enables advanced cooling by passing a cooling fluid between the bumps.Type: ApplicationFiled: February 24, 2011Publication date: August 30, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: You-Hua CHOU, Yi-Jen LAI, Chun-Jen CHEN, Perre KAO
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Publication number: 20110223767Abstract: A method of recycling a control wafer having a low-k dielectric layer deposited thereon involves etching a portion of the low-k dielectric layer using a plasma resulting in a residual film of the low-k dielectric layer and byproduct particulates of carbon on the substrate. The residual dielectric film is removed by wet etching with a low polarization organic solvent that includes HF and a surfactant.Type: ApplicationFiled: May 24, 2011Publication date: September 15, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jin-Lin Liang, Yu-Sheng Su, Tai-Yung Yu, Perre Kao, Pin Chia Su, Li Te Hsu
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Publication number: 20090233447Abstract: A method of recycling a control wafer having a dielectric layer deposited thereon involves removing most of the dielectric layer by plasma etching leaving a residual film of the dielectric and then removing the residual dielectric film by a wet etching process. The combination of the dry and wet etching provides effective removal of the dielectric material without damaging the wafer substrate and any residual wet etching byproduct particulate remaining on the wafer substrate is then removed by APM cleaning and scrubbing.Type: ApplicationFiled: March 11, 2008Publication date: September 17, 2009Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jin-Lin Liang, Yu-Sheng Su, Tai-Yung Yu, Perre Kao, Pin-Chia Su, Li Te Hsu