Abstract: A method of manufacturing a semiconductor device includes providing a region of semiconductor material including a top side, an edge region, a multiple shield conductor contact area within the edge region, an active area, and an upper shield contact area. The method includes providing an active trench. The active trench includes a lower shield conductor, a first shield dielectric isolating the lower shield conductor from the region of semiconductor material, an upper shield conductor, and a second shield dielectric isolating the lower shield conductor from the upper shield conductor within the active area. The lower shield conductor and the upper shield conductor are coupled together in the multiple shield conductor contact area. The method includes providing a shield contact in the upper shield contact area coupled to the upper shield conductor in the active trench.

Abstract: A semiconductor device includes a first termination trench at a first edge region and a second termination trench at a second edge region. A first active trench extends from the first termination trench towards the second termination trench and terminates with a first tip region separated from the second termination trench by the termination mesa region. A second active trench extends from the second termination trench towards the first termination trench and terminates with a second tip region separated from the first termination trench by the termination mesa region. A first gate contact trench is connected to the first termination trench within the first edge region. A coupling trench is at a third edge region and is connected to the second termination trench, The coupling trench includes a corner portion that couples the coupling trench to the first gate contact trench.

Abstract: A process of forming an electronic device can form an accumulation channel or an integrated diode by selective doping parts of a workpiece. In an embodiment, a doped region can be formed by implanting a sidewall of a body region. In another embodiment, a doped region can correspond to a remaining portion of a semiconductor layer after forming another doped region by implanting into a contact opening. The accumulation channel or the integrated diode can lower the barrier for a body diode turn-on. Reduced stored charge and QRR may be achieved, leading to lower switching losses.

Abstract: A process of forming an electronic device can form an accumulation channel or an integrated diode by selective doping parts of a workpiece. In an embodiment, a doped region can be formed by implanting a sidewall of a body region. In another embodiment, a doped region can correspond to a remaining portion of a semiconductor layer after forming another doped region by implanting into a contact opening. The accumulation channel or the integrated diode can lower the barrier for a body diode turn-on. Reduced stored charge and QRR may be achieved, leading to lower switching losses.

Abstract: In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus can include a source region segment of a first conductivity type disposed in a first side of the mesa region where the source region segment is included in a plurality of source region segments and where the plurality of source region segments are aligned along the longitudinal axis. The apparatus can include a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region and having a portion disposed above the source region segment where the body region segment is included in a plurality of body region segments.

Abstract: A semiconductor device includes a region of semiconductor material comprising a shielded-gate trench structure. The shielded-gate trench structure includes an active trench, an insulated shield electrode in the lower portion of the active trench, an insulated gate electrode adjacent to the gate dielectric in an upper portion of the active trench, and an inter-pad dielectric (IPD) interposed between the gate electrode and the shield electrode. A conductive region is within the active trench and extends through the gate electrode and the IPD and connected to the shield electrode. The conductive region is electrically isolated from the gate electrode. The gate electrode comprises a shape that is uninterrupted on at least one side of the conductive region in a top view.

Abstract: In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus can include a source region segment of a first conductivity type disposed in a first side of the mesa region where the source region segment is included in a plurality of source region segments and where the plurality of source region segments are aligned along the longitudinal axis. The apparatus can include a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region and having a portion disposed above the source region segment where the body region segment is included in a plurality of body region segments.

Abstract: A semiconductor device includes a region of semiconductor material comprising a shielded-gate trench structure. The shielded-gate trench structure includes an active trench, an insulated shield electrode in the lower portion of the active trench, an insulated gate electrode adjacent to the gate dielectric in an upper portion of the active trench, and an inter-pad dielectric (IPD) interposed between the gate electrode and the shield electrode. A conductive region is within the active trench and extends through the gate electrode and the IPD and connected to the shield electrode. The conductive region is electrically isolated from the gate electrode. The gate electrode comprises a shape that is uninterrupted on at least one side of the conductive region in a top view.

Abstract: A semiconductor device includes a region of semiconductor material comprising a shielded-gate trench structure. The shielded-gate trench structure includes an active trench, an insulated shield electrode in the lower portion of the active trench, an insulated gate electrode adjacent to the gate dielectric in an upper portion of the active trench, and an inter-pad dielectric (IPD) interposed between the gate electrode and the shield electrode. A conductive region is within the active trench and extends through the gate electrode and the IPD and is electrically connected to the shield electrode. The conductive region is electrically isolated from the gate electrode. The gate electrode comprises a shape that is uninterrupted on at least one side the conductive region in a top view so that the gate electrode.

Abstract: In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus can include a source region segment of a first conductivity type disposed in a first side of the mesa region where the source region segment is included in a plurality of source region segments and where the plurality of source region segments are aligned along the longitudinal axis. The apparatus can include a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region and having a portion disposed above the source region segment where the body region segment is included in a plurality of body region segments.

Abstract: A process of forming an electronic device can form an accumulation channel or an integrated diode by selective doping parts of a workpiece. In an embodiment, a doped region can be formed by implanting a sidewall of a body region. In another embodiment, a doped region can correspond to a remaining portion of a semiconductor layer after forming another doped region by implanting into a contact opening. The accumulation channel or the integrated diode can lower the barrier for a body diode turn-on. Reduced stored charge and QRR may be achieved, leading to lower switching losses.

Abstract: In one embodiment, a semiconductor device is formed having a plurality of active trenches formed within an active region of the semiconductor device. A first insulator is formed along at least a portion of sidewalls of each active trench. A perimeter termination trench is formed that surrounds the active region. The perimeter termination trench is formed having a first sidewall that is adjacent the active region and a second sidewall that is opposite the first sidewall. An insulator is formed along the second sidewall that has a thickness is greater than an insulator that is formed along the first sidewall.

Abstract: In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus can include a source region segment of a first conductivity type disposed in a first side of the mesa region where the source region segment is included in a plurality of source region segments and where the plurality of source region segments are aligned along the longitudinal axis. The apparatus can include a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region and having a portion disposed above the source region segment where the body region segment is included in a plurality of body region segments.

Abstract: A semiconductor device includes a region of semiconductor material comprising a shielded-gate trench structure. The shielded-gate trench structure includes an active trench, an insulated shield electrode in the lower portion of the active trench, an insulated gate electrode adjacent to the gate dielectric in an upper portion of the active trench, and an inter-pad dielectric (IPD) interposed between the gate electrode and the shield electrode. A conductive region is within the active trench and extends through the gate electrode and the IPD and is electrically connected to the shield electrode. The conductive region is electrically isolated from the gate electrode. The gate electrode comprises a shape that is uninterrupted on at least one side the conductive region in a top view so that the gate electrode.

Abstract: In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus can include a source region segment of a first conductivity type disposed in a first side of the mesa region where the source region segment is included in a plurality of source region segments and where the plurality of source region segments are aligned along the longitudinal axis. The apparatus can include a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region and having a portion disposed above the source region segment where the body region segment is included in a plurality of body region segments.

Abstract: In some aspects, the techniques described herein relate to a circuit including: a metal-oxide semiconductor field-effect transistor (MOSFET) including a gate, a source, and a drain; and a snubber circuit coupled between the drain and the source, the snubber circuit including: a diode having a cathode and an anode, the cathode being coupled with the drain; a capacitor having a first terminal coupled with the anode, and a second terminal coupled with the source; and a resistor having a first terminal coupled with the anode and the first terminal of the capacitor, and a second terminal coupled with the source.

Abstract: A semiconductor device includes a region of semiconductor material comprising a major surface and a first conductivity type and a shielded-gate trench structure. The shielded-gate trench structure includes an active trench, an insulated shield electrode in the lower portion of the active trench; an insulated gate electrode adjacent to the gate dielectric in an upper portion of the active trench; and an inter-pad dielectric (IPD) interposed between the gate electrode and the shield electrode. An interlayer dielectric (ILD) structure is over the major surface. A conductive region is within the active trench and extends through the ILD structure, the gate electrode, and the IPD, and is electrically connected to the shield electrode. The conductive region is electrically isolated from the gate electrode by a dielectric spacer. The gate electrode comprises a shape that surrounds the conductive region in a top view so that the gate electrode is uninterrupted by the conductive region and the dielectric spacer.

Abstract: A semiconductor device includes a region of semiconductor material and a trench gate structure. The trench gate structure includes an active trench, a shield dielectric layer in a lower portion of the active trench, and a shield electrode of a first polycrystalline semiconductor material adjacent to the shield dielectric layer. A gate dielectric layer is adjacent to an upper portion of the active trench and a gate electrode of a second polycrystalline semiconductor material is adjacent to the gate dielectric layer. A shield conductive layer of a first conductive material is adjacent to the shield electrode and a gate conductive layer of the first conductive material is adjacent to the gate electrode. A dielectric fill structure is in the active trench electrically isolating the gate electrode and the gate conductive layer from the shield electrode and the shield conductive layer. In some examples, the semiconductor device includes a trench shield contact structure that includes the shield conductive layer.

Abstract: A semiconductor device includes a region of semiconductor material comprising a major surface and a first conductivity type and a shielded-gate trench structure. The shielded-gate trench structure includes an active trench, an insulated shield electrode in the lower portion of the active trench; an insulated gate electrode adjacent to the gate dielectric in an upper portion of the active trench; and an inter-pad dielectric (IPD) interposed between the gate electrode and the shield electrode. An interlayer dielectric (ILD) structure is over the major surface. A conductive region is within the active trench and extends through the ILD structure, the gate electrode, and the IPD, and is electrically connected to the shield electrode. The conductive region is electrically isolated from the gate electrode by a dielectric spacer. The gate electrode comprises a shape that surrounds the conductive region in a top view so that the gate electrode is uninterrupted by the conductive region and the dielectric spacer.

Abstract: In one embodiment, a semiconductor device is formed having a plurality of active trenches formed within an active region of the semiconductor device. A first insulator is formed along at least a portion of sidewalls of each active trench. A perimeter termination trench is formed that surrounds the active region. The perimeter termination trench is formed having a first sidewall that is adjacent the active region and a second sidewall that is opposite the first sidewall. An insulator is formed along the second sidewall that has a thickness is greater than an insulator that is formed along the first sidewall.