Abstract: To isolate two active regions formed on a silicon-on-insulator (SOI) substrate, a shallow trench isolation region is filled with liquid phase deposited silicon dioxide (LPD-SiO2) while avoiding covering the active areas with the oxide. By selectively depositing the oxide in this manner, the polishing needed to planarize the wafer is significantly reduced as compared to a chemical-vapor deposited oxide layer that covers the entire wafer surface. Additionally, the LPD-SiO2 does not include the growth seams that CVD silicon dioxide does. Accordingly, the etch rate of the LPD-SiO2 is uniform across its entire expanse thereby preventing cavities and other etching irregularities present in prior art shallow trench isolation regions in which the etch rate of growth seams exceeds that of the other oxide areas.

Abstract: The invention provides a method of forming a phase shift mask and the resulting phase shift mask. The method forms a non-transparent film on a transparent substrate and patterns an etch stop layer on the non-transparent film. The invention patterns the non-transparent film using the etch stop layer to expose areas of the transparent substrate. Next, the invention forms a mask on the non-transparent film to protect selected areas of the transparent substrate and forms a phase shift oxide on exposed areas of the transparent substrate. Subsequently, the mask is removed and the phase shift oxide is polished down to the etch stop layer, after which the etch stop layer is removed.

Abstract: A method for forming a gas dielectric with support structure on a semiconductor device structure provides low capacitance and adequate support for a conductor of the semiconductor device structure. A conductive structure, such as via or interconnect, is formed in a wiring-layer dielectric. A support is then formed that connects to the conductive structure, the support including an area thereunder. The wiring-layer dielectric is then removed from the area to form a gas dielectric.

Abstract: This invention concerns an aircraft equipped for conducting airborne gravity surveys. In another aspect it concerns a process for creating airborne gravity surveys. The aircraft is equipped to perform the method using measured attitude data, laser range data and scan angle data, and aircraft position data.

Abstract: This invention concerns an aircraft equipped for conducting airborne gravity surveys. In another aspect it concerns a process for creating airborne gravity surveys. The aircraft is equipped to perform the method using measured attitude data, laser range data and scan angle data, and aircraft position data.

Abstract: The removal of inks from a pulp fiber slurry is accomplished by use of a combination of (1) a polyester obtained through reaction between di and/or tricarboxylic acids and/or anhydrides thereof and a polyalkylene glycol or one or more alkylene oxides, (2) a first deinking agent which is an alkoxylated hydrophobic base, e.g. an alcohol, amine, acid, dimer acid, salts thereof, or the like, and (3) a second deinking agent which is a second alkoxylated hydrophobic base having a cloud point about 2 to 20° lower than the cloud point of the first deinking agent. Use of the three component combination allows an improved foam profile allowing longer continuous operation or one or more of a reduction in total chemical demand, optical bleach demand, and stickies.

Abstract: The invention provides a human nucleotide pyrophosphohydrolase-2 (NTPPH-2) and polynucleotides which identify and encode NTPPH-2. The invention also provides expression vectors, host cells, agonists, antibodies and antagonists. The invention also provides methods for treating disorders associated with expression of NTPPH-2.

Abstract: The invention provides a human nucleotide pyrophosphohydrolase-2 (NTPPH-2) and polynucleotides which identify and encode NTPPH-2. The invention also provides expression vectors, host cells, agonists, antibodies and antagonists. The invention also provides methods for treating disorders associated with expression of NTPPH-2.

Abstract: The invention provides a human nucleotide pyrophosphohydrolase-2 (NTPPH-2) and polynucleotides which identify and encode NTPPH-2. The invention also provides expression vectors, host cells, agonists, antibodies and antagonists. The invention also provides methods for treating disorders associated with expression of NTPPH-2.

Abstract: The invention provides a human nucleotide pyrophosphohydrolase (NTPPH-1) and polynucleotides which identify and encode NTPPH-1. The invention also provides expression vectors, host cells, agonists, antibodies and antagonists. The invention also provides methods for treating disorders associated with expression of NTPPH-1.

Abstract: The present invention concerns a method for making an identification mark on a silicon surface. In a preferred embodiment, the identification mark formed on the silicon surface does not substantially score the silicon. A silicon or silicon dioxide surface coated with an insulating layer is marked by laser scribing, leaving an exposed area on the silicon or the silicon dioxide. The exposed area on the silicon wafer is preferably not marked by the laser scribing. The exposed silicon surface is then oxidized by dry or wet oxidizing. The silicon oxide can be subsequently removed to leave an etched mark. The method reduces or eliminates the formation of stresses and silicon slag at the etched mark that can cause defects and reduce yield.