Abstract: The plasma radio-frequency (RF) waveguide switch utilizes the RF transmission cutoff frequency property of ionized gas (plasma) to implement an RF switch in waveguide. The plasma RF waveguide switch includes a waveguide defining an inner space and having an input port for receiving an RF signal and an output port, a plasma chamber placed in the inner space, ionizable gas contained in the plasma chamber, and at least one activator configured to activate the ionizable gas into a plasma state. The plasma chamber is self-contained and hermetically sealed, and therefore, the plasma RF waveguide switch does not require an external gas tank or gas supply device. The plasma chamber includes a first dielectric hermetic waveguide window at a side of the plasma chamber and a second dielectric hermetic waveguide window at an opposite side of the plasma chamber.

Abstract: The plasma radio-frequency (RF) waveguide switch utilizes the RF transmission cutoff frequency property of ionized gas (plasma) to implement an RF switch in waveguide. The plasma RF waveguide switch includes a waveguide defining an inner space and having an input port for receiving an RF signal and an output port, a plasma chamber placed in the inner space, ionizable gas contained in the plasma chamber, and at least one activator configured to activate the ionizable gas into a plasma state. The plasma chamber is self-contained and hermetically sealed, and therefore, the plasma RF waveguide switch does not require an external gas tank or gas supply device. The plasma chamber includes a first dielectric hermetic waveguide window at a side of the plasma chamber and a second dielectric hermetic waveguide window at an opposite side of the plasma chamber.

Abstract: A monolithic microwave integrated circuit (MMIC) flip chip interconnect is formed by coating an active side of the chip with a dielectric coating, such as benzocyclobutene (BCB), that inhibits deposition of metal plating materials. A portion of the dielectric coating is removed to expose bond pads on the active side of the chip, stud bumps are bonded to the bond pads, and the active side is then plated with first and second consecutive metal plating materials, such as nickel and gold, respectively, that do not adhere to the dielectric coating. The chip is then oriented such that the plated stud bumps on the active side of the chip face bond pads on a substrate, and the stud bumps on the chip are bonded to the bond pads on the substrate.

Abstract: A monolithic microwave integrated circuit (MMIC) flip chip interconnect is formed by coating an active side of the chip with a dielectric coating, such as benzocyclobutene (BCB), that inhibits deposition of metal plating materials. A portion of the dielectric coating is removed to expose bond pads on the active side of the chip, stud bumps are bonded to the bond pads, and the active side is then plated with first and second consecutive metal plating materials, such as nickel and gold, respectively, that do not adhere to the dielectric coating. The chip is then oriented such that the plated stud bumps on the active side of the chip face bond pads on a substrate, and the stud bumps on the chip are bonded to the bond pads on the substrate.

Abstract: An MMIC chip is disclosed that includes a planar substrate having a first surface and a second surface, a conductive layer having an opening on the first surface, a transmission line on the second surface, at least one conductor extending from the conductive layer to the second surface defining a waveguide around the opening, wherein the transmission line is connected to the at least one conductor such that a signal traveling along the transmission line is guided toward the opening in the first side by the at least one conductor.

Abstract: In one aspect, an embodiment of the invention provides a transition from a planar substrate/chip circuit microwave transmission line to waveguide transmission media on the back of the substrate/chip. The transition enables planar waveguide fed MMW ESA architectures to be realized within the tight grid spacing required for emerging MMW ESAs.

Abstract: A vertically integrated Ka-band active electronically scanned antenna including, among other things, a transitioning RF waveguide relocator panel located behind a radiator faceplate and an array of beam control tiles respectively coupled to one of a plurality of transceiver modules via an RF manifold. Each of the beam control tiles includes a respective plurality of high power transmit/receive (T/R) cells as well as dielectric waveguides, RF stripline and coaxial transmission line elements. The waveguide relocator panel is preferably fabricated by a diffusion bonded copper laminate stack up with dielectric filling. The beam control tiles are preferably fabricated by the use of multiple layers of low temperature co-fired ceramic (LTCC) material laminated together.

Abstract: A vertically integrated Ka-band active electronically scanned antenna including, among other things, a transitioning RF waveguide relocator panel located behind a radiator faceplate and an array of beam control tiles respectively coupled to one of a plurality of transceiver modules via an RF manifold. Each of the beam control tiles includes a respective plurality of high power transmit/receive (T/R) cells as well as dielectric waveguides, RF stripline and coaxial transmission line elements. The waveguide relocator panel is preferably fabricated by a diffusion bonded copper laminate stack up with dielectric filling. The beam control tiles are preferably fabricated by the use of multiple layers of low temperature co-fired ceramic (LTCC) material laminated together.

Abstract: A vertically integrated Ka-band active electronically scanned antenna including, among other things, a transitioning RF waveguide relocator panel located behind a radiator faceplate and an array of beam control tiles respectively coupled to one of a plurality of transceiver modules via an RF manifold. Each of the beam control tiles includes a respective plurality of high power transmit/receive (T/R) cells as well as dielectric waveguides, RF stripline and coaxial transmission line elements. The waveguide relocator panel is preferably fabricated by a diffusion bonded copper laminate stack up with dielectric filling. The beam control tiles are preferably fabricated by the use of multiple layers of low temperature co-fired ceramic (LTCC) material laminated together.

Abstract: A subharmonic image rejection and image enhancement mixer for mixing millimeter wavelength signals using a low conversion loss technique is described. A local oscillator frequency from an external source is fed to a first subharmonic mixer and through a phase shifter to a second subharmonic mixer. The phase shifter delays the local oscillator signal by (90.degree./n), where n is the multiple of the subharmonic mixers and is greater than 1. The first and second subharmonic mixers mix the local oscillator frequency with an input signal, which includes a desired frequency and an image frequency, to produce an intermediate frequency having a desired component and an image component at a select phase. A 0.degree.-90.degree. hybrid separates and terminates the image component of the intermediate frequency.