Abstract: An electronic component includes a semiconductor chip and/or a test structure. The semiconductor chip includes a multi-layer coating having at least one interconnect layer, at least one insulation layer, and at least one planarization layer. A method of producing the component is also disclosed. Embedded adhesion regions are provided in the planarization layer, whereby the adhesion regions provide adhesion surfaces to the adjacent insulation layers.

Abstract: The present invention relates to an electronic component having a semiconductor chip (1) and/or a test structure (55), whereby the semiconductor chip (1) comprises a multi-layer coating (2) including at least one interconnect layer (3, 4, 5), one insulation layer (6, 7, 8, 9) and one planarization layer (10), and to a method of producing said component. Embedded adhesion regions (12) are provided in the planarization layer (10), whereby the adhesion regions (12) provide adhesion surfaces (13, 14) to the adjacent insulation layers (8, 9; 65, 66).

Abstract: A semiconductor layer is irradiated with an intensity-modulated laser emission to induce a modulated optical reflectivity which is a valid measure for the density of the electronic inhomogeneities in the semiconductor layer. The use of a test laser beam having a wavelength in a range of 200-345 nm makes exact measurements possible in the entire range of application and is particularly enabling for identification of low and high implantation doses and the identification of residual damage in crystalline semiconductor layers.