Patents by Inventor Peter Anand Sharma

Peter Anand Sharma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240228278
    Abstract: Rare earth (RE) superhydrides exhibit high temperature superconductivity but are difficult to characterize and use in applications due to their high formation and stability pressures, which are typically in excess of 100 GPa. Cryomilling of metal precursors improves hydrogen reactivity and hydrogen uptake for forming such metal hydrides at lower pressures. As an example, an elemental lanthanum precursor was milled at liquid nitrogen temperatures for different time intervals. After exposure to gaseous hydrogen at 380° C. and 100 bar, a systematic enhancement of hydrogen absorption with increasing ball milling time was found for forming the LaHx, x=2-3 phase. Exposing the La precursor to pressures up to 60 GPa with an ammonia borane (BNH6) hydrogen source resulted in a hypervalent LaH4 phase. This LaH4 phase is associated with the suppression of a rhombohedral distortion of the Fm3m cubic structure after cryomilling the precursor.
    Type: Application
    Filed: January 4, 2024
    Publication date: July 11, 2024
    Inventors: Peter Anand Sharma, Vitalie Stavila, Sakun Duwal, Dan Catalin Spataru
  • Patent number: 11788893
    Abstract: A nanoscale bolometer for infrared (IR) thermal imaging comprises a subwavelength antenna that provides a specific detectivity approaching a fundamental, thermodynamic limit. The uncooled nanobolometer achieves performance comparable to cooled, high-performance, semiconductor photodetectors, but with significantly reduced size, weight, power, and cost.
    Type: Grant
    Filed: April 12, 2022
    Date of Patent: October 17, 2023
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Charles Thomas Harris, Tzu-Ming Lu, Ting S. Luk, Peter Anand Sharma
  • Patent number: 10876987
    Abstract: An apparatus for making in-situ electrical measurements of a sample while the sample is subjected to a temperature gradient between a first side of the sample and a second side of the sample. The apparatus comprises a first heater and a second heater that are positioned in contact with the first side of the sample and the second side of the sample, respectively. The first heater and the second heater comprise respective faces that each have electrical contacts embedded therein. Electrical measurements pertaining to the sample can be made by way of the electrical contacts embedded in the faces. A temperature at either side of the sample can be monitored by way of thermocouples positioned inside the heaters in proximity to the faces of the heaters.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: December 29, 2020
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Karla Rosa Reyes, Josh A. Whaley, Peter Anand Sharma
  • Patent number: 9799828
    Abstract: Topological insulators can be utilized in a new type of infrared photodetector that is intrinsically sensitive to the polarization of incident light and static magnetic fields. The detector isolates single topological insulator surfaces and allows light collection and exposure to static magnetic fields. The wavelength range of interest is between 750 nm and about 100 microns. This detector eliminates the need for external polarization selective optics. Polarization sensitive infrared photodetectors are useful for optoelectronics applications, such as light detection in environments with low visibility in the visible wavelength regime.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: October 24, 2017
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventor: Peter Anand Sharma
  • Patent number: 9748345
    Abstract: Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: August 29, 2017
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventor: Peter Anand Sharma
  • Publication number: 20160365255
    Abstract: Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.
    Type: Application
    Filed: June 8, 2016
    Publication date: December 15, 2016
    Inventor: Peter Anand Sharma