Abstract: A method of determining a correlated evolution of a state relating to a solid object, the method involving obtaining information indicative of a plurality of properties of the solid object. The solid object includes at least one material, and the plurality of properties include material properties of the at least one material. Information is obtained indicative of a certain excitation of the solid object. A closed set of hierarchical equations representing dynamics of the interacting excitations within the solid object, including spatial correlations among the plurality of excitations, based on the properties of the solid object are determined; the hierarchical equations are indicative of a time evolution of correlation functions of the excitations, and the set of closed hierarchical equations is closed according to an approximation. The correlated evolution of the state of the solid object based on the closed set of hierarchical equations and the certain excitation is also determined.

Abstract: Three-dimensional master equation modeling for disordered semiconductor devices is provided. Charge transport is modeled as incoherent hopping between localized molecular states, and recombination is modeled as a nearest-neighbor process where an electron at a first location and a hole at a second location can recombine at either the first location or the second location. Here the first and second locations are any pair of nearest neighbor locations. We have found that this nearest neighbor recombination model performs substantially better than the conventional local recombination model where an electron and a hole must be at the same location to recombine. The recombination rate is modeled as a product of a prefactor ?, hopping rates and state occupancies. Importantly, we have found that sufficient simulation accuracy can be obtained by taking ? to be given by an empirically derived analytic expression.

Abstract: Three-dimensional master equation modeling for disordered semiconductor devices is provided. Charge transport is modeled as incoherent hopping between localized molecular states, and recombination is modeled as a nearest-neighbor process where an electron at a first location and a hole at a second location can recombine at either the first location or the second location. Here the first and second locations are any pair of nearest neighbor locations. We have found that this nearest neighbor recombination model performs substantially better than the conventional local recombination model where an electron and a hole must be at the same location to recombine. The recombination rate is modeled as a product of a prefactor ?, hopping rates and state occupancies. Importantly, we have found that sufficient simulation accuracy can be obtained by taking ? to be given by an empirically derived analytic expression.