Abstract: The present invention relates to droplet-based pyrosequencing including a method of identifying a base at a target position in a sample nucleic acid. The method includes: (a) providing a droplet microactuator including a first droplet including a sample nucleic acid immobilized on a bead; and (b) on the droplet microactuator: (i) contacting the first droplet with one or more reagent droplets to yield a second droplet, wherein the one or more reagent droplets include reagents for extending a double stranded portion of the sample nucleic acid by incorporating a nucleotide at the target position; (ii) splitting the second droplet to yield a third droplet including the bead and a fourth droplet lacking the bead; and (iii) assaying the third droplet to determine whether the nucleotide was incorporated at the target position.

Abstract: The present invention relates to droplet-based pyrosequencing including a method of identifying a base at a target position in a sample nucleic acid. The method includes: (a) providing a droplet microactuator including a first droplet including a sample nucleic acid immobilized on a bead; and (b) on the droplet microactuator: (i) contacting the first droplet with one or more reagent droplets to yield a second droplet, wherein the one or more reagent droplets include reagents for extending a double stranded portion of the sample nucleic acid by incorporating a nucleotide at the target position; (ii) splitting the second droplet to yield a third droplet including the bead and a fourth droplet lacking the bead; and (iii) assaying the third droplet to determine whether the nucleotide was incorporated at the target position.

Abstract: Single-crystalline growth is realized using a liquid-phase crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a semiconductor device structure includes a substantially single-crystal region. A liquid-phase material, such as Ge or a semiconductor compound, is crystallized to form the single-crystal region using an approach involving defect inhibition for the promotion of single-crystalline growth. In some instances, this defect inhibition involves the reduction and/or elimination of defects using a relatively small physical opening via which a crystalline growth front propagates. In other instances, this defect inhibition involves causing a change in crystallization front direction relative to a crystallization seed location.

Abstract: Single-crystalline growth is realized using a liquid-phase crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodiment, a semiconductor device structure includes a substantially single-crystal region. A liquid-phase material, such as Ge or a semiconductor compound, is crystallized to form the single-crystal region using an approach involving defect inhibition for the promotion of single-crystalline growth. In some instances, this defect inhibition involves the reduction and/or elimination of defects using a relatively small physical opening via which a crystalline growth front propagates. In other instances, this defect inhibition involves causing a change in crystallization front direction relative to a crystallization seed location.