Abstract: A three-level power semiconductor module has a housing, a switching device, a first, a second and a third DC voltage terminal element and an AC voltage terminal element, wherein respective terminal areas of the DC voltage terminal elements have an identical normal direction and are arranged next to one another in a projection in the normal direction, and wherein the third terminal area of the third DC voltage terminal element lies in a first plane and the second terminal area of the second DC voltage terminal element lies in a second plane parallel to the first plane as seen in the normal direction. An arrangement having a plurality of such three-level power semiconductor modules is provided.

Abstract: A three-level power semiconductor module has a housing, with a switching device, with a first, a second and a third DC voltage terminal element which form a group, with an AC voltage terminal element wherein the switching device is formed as a TNPC circuit arrangement, which has a DC branch with an upper first switch, with a lower fourth switch and with a center tap and a T branch with a second switch and with a third switch connected in series with the second switch, wherein the first switch is formed of a plurality of first part switches, a majority of these part switches lie in the direction from the group of DC voltage terminals to the AC voltage terminal on a first straight line wherein the fourth switch is formed of a plurality of fourth part switches, wherein a majority of these part switches lie in the direction from the group of DC voltage terminals to the AC voltage terminal on a second straight line adjacent to the first and the focal points of the second and third switch lie in the direction from

Abstract: A three-level power semiconductor module with a housing, with a switching device, with a first, a second and a third DC voltage terminal element, and with an AC voltage terminal element.

Abstract: A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal.

Abstract: A submodule and an assembly include a switching device having a substrate, and printed conductors arranged thereupon. The submodule incorporates a first and a second DC voltage printed conductor, to which a first and a second DC voltage terminal element are connected in an electrically conductive manner, and an AC voltage printed conductor, to which an AC voltage terminal element is connected in an electrically conductive manner. The submodule further comprises an insulating moulding, which encloses the switching device in a frame-type arrangement. The first DC voltage terminal element, by means of a first contact section, engages with a first supporting body of the insulating moulding, and the AC voltage terminal element, by means of a second contact section, engages with a second supporting body of the insulating moulding.

Abstract: A submodule and an assembly include a switching device having a substrate, and printed conductors arranged thereupon. The submodule incorporates a first and a second DC voltage printed conductor, to which a first and a second DC voltage terminal element are connected in an electrically conductive manner, and an AC voltage printed conductor, to which an AC voltage terminal element is connected in an electrically conductive manner. The submodule further comprises an insulating moulding, which encloses the switching device in a frame-type arrangement. The first DC voltage terminal element, by means of a first contact section, engages with a first supporting body of the insulating moulding, and the AC voltage terminal element, by means of a second contact section, engages with a second supporting body of the insulating moulding.

Abstract: A control device for a power semiconductor switch, has a first, second and third electrical control device terminal, and a control device that according to a control signal generates an actuation voltage on the third control device terminal and actuates the power semiconductor switch. An overcurrent detection circuit determines a first voltage corresponding to a primary power semiconductor switch voltage present between the first and second control device terminals and, if the first voltage, further to commence the generation of an actuation voltage for a switch-on of the power semiconductor switch, and if the voltage exceeds a reference voltage, to generate an overcurrent detection signal.

Abstract: A power electronic arrangement has a power converter module, and a first and a second DC voltage terminal element and a first and a second DC voltage connection element, connected to conductor tracks in an electrically conductive manner with the correct polarity. First and second DC voltage terminal element, and the first and second DC voltage connection element, form a stack with an insulation device therebetween. The first DC voltage terminal element has a first recess enclosed in a first main plane, the second DC voltage connection element has a second recess enclosed and aligned with the first in a third main plane, the second DC voltage terminal element and the first DC voltage connection element are in a second main plane between the first and third main plane, and are laterally spaced from each other proximate the recesses.

Abstract: A power semiconductor module, and an arrangement using the module. The module has a basic parallelepipedal shape with opposed pairs of main, longitudinal and narrow sides, a cooling device which is capable of carrying a flow of a cooling fluid, having a power electronics switch and a housing. The cooling device has a cooling volume with at least one cooling face and four connection devices which are arranged in pairs on the main sides. In addition, the connection devices carry the cooling fluid and are designed as a flow inflow and a flow outflow and as a return inflow and a return outflow, respectively. The power electronics switch has load input connection devices and load output connection devices which are arranged on one or both longitudinal sides and a control connection device which is arranged on a narrow side of the module.

Abstract: A power semiconductor module comprising a substrate. The power semiconductor module has first and second DC voltage load current connection elements and first and second power semiconductor components. The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module has a foil composite having a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and second metallic foil layers. The first power semiconductor component and the second power semiconductor component are electrically conductively connected to the foil composite and to the substrate. The first and second power semiconductor components are arranged on a common side in relation to the first and second DC voltage load current connection elements. The invention provides a power semiconductor module having a particularly low-inductance construction.

Abstract: A capacitor system and a method for producing a capacitor system. The capacitor system may be used in a power semiconductor module. In one embodiment, the capacitor system comprises a metal shaped body having a depression; a capacitor arranged at least partly in the depression; a spacer composed of electrically insulating material, the spacer being arranged at least partly between the capacitor and the metal shaped body in the depression; and an electrically insulating potting material provided in the depression, wherein the potting material fixes the capacitor in the depression so that the capacitor does not touch the metal shaped body.

Abstract: A solar module has a solar cell which generates a DC voltage. The module has a converter for converting a DC voltage fed into its input. The module contains a semiconductor switch and a controller which drives a switching input of the semiconductor switch. The controller drives the semiconductor switch variably so that the semiconductor switch switches more slowly during the transition operation than during normal operation, thereby reducing a dynamic overvoltage on the switch such that the voltage present on the switch does not exceed the blocking voltage of the switch.

Abstract: A power semiconductor system and method for producing a power semiconductor system. In one embodiment, the application relates to a power semiconductor system, comprising a line system for a fluid working medium; wall element having an outer side and an inner side; and a power semiconductor circuit arranged at the outer side of the wall element, wherein the inner side of the wall element forms a fluid-tight wall of the line system.

Abstract: A power semiconductor module comprising a substrate. The power semiconductor module has first and second DC voltage load current connection elements and first and second power semiconductor components. The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module has a foil composite having a first metallic foil layer and a structured second metallic foil layer and an electrically insulating foil layer arranged between the first and second metallic foil layers. The first power semiconductor component and the second power semiconductor component are electrically conductively connected to the foil composite and to the substrate. The first and second power semiconductor components are arranged on a common side in relation to the first and second DC voltage load current connection elements. The invention provides a power semiconductor module having a particularly low-inductance construction.

Abstract: A power semiconductor module, and an arrangement using the module. The module has a basic parallelepipedal shape with opposed pairs of main, longitudinal and narrow sides, a cooling device which is capable of carrying a flow of a cooling fluid, having a power electronics switch and a housing. The cooling device has a cooling volume with at least one cooling face and four connection devices which are arranged in pairs on the main sides. In addition, the connection devices carry the cooling fluid and are designed as a flow inflow and a flow outflow and as a return inflow and a return outflow, respectively. The power electronics switch has load input connection devices and load output connection devices which are arranged on one or both longitudinal sides and a control connection device which is arranged on a narrow side of the module.

Abstract: A power semiconductor system and method for producing a power semiconductor system. In one embodiment, the application relates to a power semiconductor system, comprising a line system for a fluid working medium; wall element having an outer side and an inner side; and a power semiconductor circuit arranged at the outer side of the wall element, wherein the inner side of the wall element forms a fluid-tight wall of the line system.

Abstract: A capacitor system and a method for producing a capacitor system. The capacitor system may be used in a power semiconductor module. In one embodiment, the capacitor system comprises a metal shaped body having a depression; a capacitor arranged at least partly in the depression; a spacer composed of electrically insulating material, the spacer being arranged at least partly between the capacitor and the metal shaped body in the depression; and an electrically insulating potting material provided in the depression, wherein the potting material fixes the capacitor in the depression so that the capacitor does not touch the metal shaped body.