Abstract: The invention relates to an apparatus and method for tracking energy consumption. An energy tracking system comprises at least one switching element, at least one inductor and a control block to keep the output voltage at a pre-selected level. The switching elements are configured to apply the source of energy to the inductors. The control block compares the output voltage of the energy tracking system to a reference value and controls the switching of the switched elements in order to transfer energy for the primary voltage into a secondary voltage at the output of the energy tracking system. The electronic device further comprises an ON-time and OFF-time generator and an accumulator wherein the control block is coupled to receive a signal from the ON-time and OFF-time generator and generates switching signals for the at least one switching element in the form of ON-time pulses with a constant width ON-time.

Abstract: A manufacturing method for producing a micromechanical sensor element which may be produced in a monolithically integrable design and has capacitive detection of a physical quantity is described. In addition to the manufacturing method, a micromechanical device containing such. a sensor element, e.g., a pressure sensor or an acceleration sensor, is described.

Abstract: A circuit arrangement has an integrated monocrystaline semiconductor power component having a gate, a first measuring pad, a second measuring pad, and a resistor arranged so that the gate of the power component is connected with the first measuring pad while the first measuring pad is connected with the resistor, the first measuring pad being charged with a gate test voltage which is greater than a gate voltage required for operation of the power component, the power component being integrated with an integrated circuit on a chip, the integrated circuit being connected with the second measuring pad, while the second measuring pad is connected with the resistor, the second measuring pad being charged with an external voltage which is compatible with the integrated circuit.

Abstract: A monolithically integrated MOS output-stage component, particularly a DMOS output stage, includes an output-stage element having a GATE connection, a SOURCE connection, and a DRAIN connection, and also includes an excess-temperature protection device. An integrated GATE-protection resistor is provided. The excess-temperature protection device is also integrated in the output-stage component and includes a series connection of a Zener-diode with a temperature-dependent resistor having a positive temperature coefficient. The resistor is coupled with the SOURCE connection while the Zener-diode is coupled with an outer GATE connection. The series connection is provided with a supply voltage. Furthermore, the excess-temperature protection device contains a semiconductor arrangement controlled by a control voltage at the tap node of the series connection. The semiconductor arrangement reduces the GATE voltage upon the occurrence of excess temperatures.

Abstract: A monolithically integrated circuit arrangement is arranged in a disc-shaped monocrystalline semiconductor body (100) of a first conductivity type, which semiconductor body consists of silicon and has a first and second main surface. The monolithically integrated circuit arrangement contains a vertical MOSFET power transistor (T1) which consists of a plurality of partial transistors connected in parallel and surrounded by a guard ring (4) of a second conductivity type opposite that of the semiconductor body (100). Proceeding from the first main surface (13), at least one zone (7, 8) of the conductivity type of the semiconductor body (100) but of increased impurity concentration is diffused into the guard ring (4) so as to form at least one active and/or passive peripheral circuit element (T2) which has a protective and/or regulating and/or control function.