Abstract: A method and apparatus for optimizing the efficiency of a data bus for a memory device. Extra latency is added between the time a memory controller issues a write instruction and the time the data is transferred on the data bus. This additional latency is optimized to reduce the number of idle time slots on the data bus when switching between a read instruction and a write instruction. Programmable registers are provided for adjusting the amount of latency.

Abstract: The semiconductor device has a plurality of basic units, each including a memory element and a logic element and having the same or bilateral symmetry structure. Each basic unit has a DRAM cell formed in a first active region, serially connected transistors of a logic element having second and third gate electrodes, first and second signal lines connected to the source/drain regions of the transistor pair, a third signal line connected to the second gate electrode, and a conductive connection terminal formed under the storage electrode of a DRAM capacitor and the third gate electrode. A semiconductor device having a plurality of basic units each including a memory cell and a logic cell formed on the same semiconductor substrate, the device being easy to manufacture and capable of high integration is provided.

Abstract: The semiconductor device has a plurality of basic units, each including a memory element and a logic element and having the same or bilateral symmetry structure. Each basic unit has a DRAM cell formed in a first active region, serially connected transistors of a logic element having second and third gate electrodes, first and second signal lines connected to the source/drain regions of the transistor pair, a third signal line connected to the second gate electrode, and a conductive connection terminal formed under the storage electrode of a DRAM capacitor and the third gate electrode. A semiconductor device having a plurality of basic units each including a memory cell and a logic cell formed on the same semiconductor substrate, the device being easy to manufacture and capable of high integration is provided.

Abstract: A method and apparatus for optimizing the efficiency of a data bus for a memory device. Extra latency is added between the time a memory controller issues a write instruction and the time the data is transferred on the data bus. This additional latency is optimized to reduce the number of idle time slots on the data bus when switching between a read instruction and a write instruction. Programmable registers are provided for adjusting the amount of latency.