Abstract: A multi-pawl park lock includes a gear wheel, an actuation ring, a first pawl, a second pawl, and first and second strut rods. The first pawl includes a first tooth and the second pawl includes a second tooth. The strut rods connect the actuation ring to respective pawls. The actuation ring is arranged to rotate in a first rotational direction to rotate the first pawl about a first pawl axis and engage the first tooth with the gear wheel, and rotate the second pawl about a second pawl axis and engage the second tooth with the gear wheel, preventing rotation of the gear wheel. The actuation ring is also arranged to rotate in a second rotational direction, opposite the first rotational direction, to rotate the first pawl and disengage the first tooth, and rotate the second pawl and disengage the second tooth, permitting rotation of the gear wheel.

Abstract: A multi-pawl park lock includes a gear wheel, an actuation ring, a first pawl, a second pawl, and first and second strut rods. The first pawl includes a first tooth and the second pawl includes a second tooth. The strut rods connect the actuation ring to respective pawls. The actuation ring is arranged to rotate in a first rotational direction to rotate the first pawl about a first pawl axis and engage the first tooth with the gear wheel, and rotate the second pawl about a second pawl axis and engage the second tooth with the gear wheel, preventing rotation of the gear wheel. The actuation ring is also arranged to rotate in a second rotational direction, opposite the first rotational direction, to rotate the first pawl and disengage the first tooth, and rotate the second pawl and disengage the second tooth, permitting rotation of the gear wheel.

Abstract: An support structure of an article that has a tamper deterrent structure. The support structure, such as a handle, includes segments that are connected by a series of connectors. Both the segments and the connectors, on their own, are designed to prevent their use as a weapon. The connectors provide structure to the segments when the support structure is used as intended but are positioned so the support structure will fail upon intentional manipulation. This manipulation causes the support structure to break into smaller pieces in the event the support structure is attempted to be fashioned into or used as a weapon.

Abstract: A semiconductor device includes a region of semiconductor material comprising a major surface and a first conductivity type and a shielded-gate trench structure. The shielded-gate trench structure includes an active trench, an insulated shield electrode in the lower portion of the active trench; an insulated gate electrode adjacent to the gate dielectric in an upper portion of the active trench; and an inter-pad dielectric (IPD) interposed between the gate electrode and the shield electrode. An interlayer dielectric (ILD) structure is over the major surface. A conductive region is within the active trench and extends through the ILD structure, the gate electrode, and the IPD, and is electrically connected to the shield electrode. The conductive region is electrically isolated from the gate electrode by a dielectric spacer. The gate electrode comprises a shape that surrounds the conductive region in a top view so that the gate electrode is uninterrupted by the conductive region and the dielectric spacer.

Abstract: A method includes defining a plurality of trenches of a first type that extend in a longitudinal direction in a semiconductor substrate, and defining a trench of a second type extending in a lateral direction and intersecting the plurality of trenches of the first type. The trench of the second type is in fluid communication with each of the intersected plurality of trenches of the first type. The method further includes disposing a shield poly layer in the plurality of trenches of the first type and the trench of the second type, disposing an inter-poly dielectric layer and a gate poly layer above the shield poly layer in the plurality of trenches of the first type and the trench of the second type, and forming an electrical contact to the shield poly layer through an opening in the inter-poly dielectric layer and the gate poly layer disposed in the trench of the second type.

Abstract: A semiconductor device includes a region of semiconductor material and a trench gate structure. The trench gate structure includes an active trench, a shield dielectric layer in a lower portion of the active trench, and a shield electrode of a first polycrystalline semiconductor material adjacent to the shield dielectric layer. A gate dielectric layer is adjacent to an upper portion of the active trench and a gate electrode of a second polycrystalline semiconductor material is adjacent to the gate dielectric layer. A shield conductive layer of a first conductive material is adjacent to the shield electrode and a gate conductive layer of the first conductive material is adjacent to the gate electrode. A dielectric fill structure is in the active trench electrically isolating the gate electrode and the gate conductive layer from the shield electrode and the shield conductive layer. In some examples, the semiconductor device includes a trench shield contact structure that includes the shield conductive layer.

Abstract: A semiconductor device includes a region of semiconductor material comprising a major surface and a first conductivity type and a shielded-gate trench structure. The shielded-gate trench structure includes an active trench, an insulated shield electrode in the lower portion of the active trench; an insulated gate electrode adjacent to the gate dielectric in an upper portion of the active trench; and an inter-pad dielectric (IPD) interposed between the gate electrode and the shield electrode. An interlayer dielectric (ILD) structure is over the major surface. A conductive region is within the active trench and extends through the ILD structure, the gate electrode, and the IPD, and is electrically connected to the shield electrode. The conductive region is electrically isolated from the gate electrode by a dielectric spacer. The gate electrode comprises a shape that surrounds the conductive region in a top view so that the gate electrode is uninterrupted by the conductive region and the dielectric spacer.

Abstract: Technologies for a harness connected with an integrated wireless transceiver are disclosed. In the illustrative embodiment, an in-line connector with an integrated wireless transceiver is inserted between a vehicle connector and a trailer connector of a trailer wiring harness assembly. The wireless transceiver connects to a wireless sensor such as a camera and passes the sensor data to the vehicle connector. Connections from the trailer connector designated for video or other sensor data may not be connected to corresponding connections of the vehicle connector.

Abstract: A one-way clutch, including: an outer race including a first outer race plate defining a first rocker pocket and a second outer race plate non-rotatably connected to the first outer race plate and defining a second rocker pocket; an inner race axially disposed between the first outer race plate and the second outer race plate; and a rocker assembly including a rocker arranged to contact the inner race and including a first portion disposed in the first rocker pocket and a second portion disposed in the second rocker pocket, a spring guide retained by the first outer race plate and the second outer race plate, and a spring engaged with the spring guide and in contact with the rocker.

Abstract: In one embodiment, a semiconductor device is formed having a plurality of active trenches formed within an active region of the semiconductor device. A first insulator is formed along at least a portion of sidewalls of each active trench. A perimeter termination trench is formed that surrounds the active region. The perimeter termination trench is formed having a first sidewall that is adjacent the active region and a second sidewall that is opposite the first sidewall. An insulator is formed along the second sidewall that has a thickness is greater than an insulator that is formed along the first sidewall.

Abstract: A clutch assembly includes an outer ring having a first and second pocket, and an inner ring. A strut and pawl may be disposed within the first and second pockets. The pawl may be configured such that rotation of the strut pushes the pawl toward teeth of the inner ring for engagement therewith. In a first mode of operation, the pawl does not contact the teeth and the inner ring is free to rotate in the first and second rotational directions. In a second mode of operation, the pawl is in partial engagement with the teeth and the inner ring is free to rotate in the second rotational direction and prevented from rotation in the first rotational direction. In a third mode of operation, the pawl is in full engagement with the teeth and the inner ring is prevented from rotation in both the first and the second rotational directions.

Abstract: A semiconductor device includes a region of semiconductor material and a trench gate structure. The trench gate structure includes an active trench, a shield dielectric layer in a lower portion of the active trench, and a shield electrode of a first polycrystalline semiconductor material adjacent to the shield dielectric layer. A gate dielectric layer is adjacent to an upper portion of the active trench and a gate electrode of a second polycrystalline semiconductor material is adjacent to the gate dielectric layer. A shield conductive layer of a first conductive material is adjacent to the shield electrode and a gate conductive layer of the first conductive material is adjacent to the gate electrode. A dielectric fill structure is in the active trench electrically isolating the gate electrode and the gate conductive layer from the shield electrode and the shield conductive layer. In some examples, the semiconductor device includes a trench shield contact structure that includes the shield conductive layer.

Abstract: In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus can include a source region segment of a first conductivity type disposed in a first side of the mesa region where the source region segment is included in a plurality of source region segments and where the plurality of source region segments are aligned along the longitudinal axis. The apparatus can include a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region and having a portion disposed above the source region segment where the body region segment is included in a plurality of body region segments.

Abstract: In one embodiment, a semiconductor device is formed having a plurality of active trenches formed within an active region of the semiconductor device. A first insulator is formed along at least a portion of sidewalls of each active trench. A perimeter termination trench is formed that surrounds the active region. The perimeter termination trench is formed having a first sidewall that is adjacent the active region and a second sidewall that is opposite the first sidewall. An insulator is formed along the second sidewall that has a thickness is greater than an insulator that is formed along the first sidewall.

Abstract: A clutch assembly comprises an actuation assembly, an outer ring, and an inner ring disposed radially inward of the outer ring and rotatable about an axis in first and second rotational directions. A first and second strut are rotatably disposed within first and second pockets of the outer ring and configured to be rotated by the actuation assembly. A first pawl and a second pawl are rotatably disposed within a third pocket and a fourth pocket, respectively. For a transition mode, the actuation assembly is configured to rotate the first strut within the first pocket such that rotation of the first strut in the first rotational direction urges the first pawl radially inward into partial engagement with teeth disposed on an outer surface of the inner ring, the second pawl remains free of contact with the inner ring and the inner ring rotates in the first rotational direction.

Abstract: A differential actuator including: a shuttle supported for rotation around a central axis and including a body portion, a first pinion gear connected to the body portion, and a second pinion gear connected to the body portion; a first component including a first plurality of teeth meshed with the first pinion gear and supported for rotation around the central axis; and a second component including a second plurality of teeth meshed with the second pinion gear and supported for rotation around the central axis. For a first operating mode of the differential actuator: the shuttle is arranged to be rotated by an actuator in a first circumferential direction around the central axis; and the first pinion gear is arranged to rotate the first component in the first circumferential direction around the central axis.

Abstract: A clutch including: an inner race forming a pocket; an outer race located radially outward of the inner race; a pawl including a portion disposed in the pocket; a cage rotatable by an actuator to a circumferential position with respect to the pawl; and a resilient element fixed to the cage and in contact with the pawl. The inner or outer race is supported for rotation about an axis of rotation. In a first one-way mode: the cage is in the circumferential position; the inner race is relatively rotatable, with respect to the outer race, only in a first circumferential direction; and the resilient element urges the pawl into contact with the outer race. In a second one-way mode: the inner race is relatively rotatable, with respect to the outer race, only in a second circumferential direction; and the resilient element urges the pawl into contact with the outer race.

Abstract: In at least one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode, and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench, and a source region of a first conductivity type disposed in a top portion of the mesa region. The apparatus includes a plurality of body region segments of a second conductivity type disposed in the side of the mesa region. The plurality of body region segments define an alternating pattern with the plurality of source region segments along the side of the mesa region.

Abstract: Herein are provided systems, devices, and methods for the treatment of oral and pharyngeal disorders via the stimulation of pharyngeal muscles. Contraction of the pharyngeal muscle cells (9) is induced by activation of at least one ion channel (1) formed in at least one of a muscle cell and a neural cell. The ion channel opens (4) when it is activated by a stimulus (3). This allows ions to flow into (5) and out of (6) the cell, causing muscle contraction. This muscle contraction can be targeted towards specific muscles depending upon the condition to be treated.

Abstract: A hybrid module for a vehicle includes a damper, a pulley, a clutch, and a torque converter. The damper is arranged for fixing to a crank shaft of an engine. The pulley circumscribes the damper and is arranged for connecting to an electric motor via a belt drive. The clutch has a first output flange for drivingly engaging the damper with the pulley. The torque converter has a pilot drivingly engaged with the first output flange.