Abstract: A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III-V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.

Abstract: A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.

Abstract: A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III–V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.