Abstract: An apparatus and a method to hold a patterning device configured to impart a beam of radiation with a pattern in its cross-section. The apparatus includes a base configured to support the patterning device and an inner cover couplable to the base. The inner cover includes a restraining mechanism that, upon an application of a force external to the inner cover, is configured to provide an in-plane force to the patterning device to restrain movement of the patterning device, the in-plane force being substantially parallel to a patterning surface of the patterning device.

Abstract: An apparatus and a method to hold a patterning device configured to impart a beam of radiation with a pattern in its cross-section. The apparatus includes a base configured to support the patterning device and an inner cover couplable to the base. The inner cover includes a restraining mechanism that, upon an application of a force external to the inner cover, is configured to provide an in-plane force to the patterning device to restrain movement of the patterning device, the in-plane force being substantially parallel to a patterning surface of the patterning device.

Abstract: A lithographic apparatus including a uniformity correction system is disclosed. The lithographic apparatus comprises an illumination system configured to condition a beam of radiation. The illumination system comprises a uniformity correction system located at a plane configured to receive a substantially constant pupil when illuminated with the beam of radiation. The uniformity correction system includes fingers configured to be movable into and out of intersection with a radiation beam so as to correct an intensity of respective portions of the radiation beam. A linear motor actuator arrangement drives the fingers to their respective appropriate positions to compensate for non-uniform illumination. Control is provided by a control system that precisely manipulates carriers of the fingers.

Abstract: A lithographic apparatus including a uniformity correction system is disclosed. The lithographic apparatus comprises an illumination system configured to condition a beam of radiation. The illumination system comprises a uniformity correction system located at a plane configured to receive a substantially constant pupil when illuminated with the beam of radiation. The uniformity correction system includes fingers configured to be movable into and out of intersection with a radiation beam so as to correct an intensity of respective portions of the radiation beam. A linear motor actuator arrangement drives the fingers to their respective appropriate positions to compensate for non-uniform illumination. Control is provided by a control system that precisely manipulates carriers of the fingers.

Abstract: An apparatus and a method to hold a patterning device configured to impart a beam of radiation with a pattern in its cross-section. The apparatus includes a base configured to support the patterning device and an inner cover couplable to the base. The inner cover includes a restraining mechanism that, upon an application of a force external to the inner cover, is configured to provide an in-plane force to the patterning device to restrain movement of the patterning device, the in-plane force being substantially parallel to a patterning surface of the patterning device.

Abstract: A lithographic apparatus including a uniformity correction system is disclosed. Fingers move into and out of intersection with a radiation beam to correct an intensity of the radiation beam. Actuating devices are coupled to the fingers. A width of a tip of each of the fingers is half that of a width of the actuating devices. Systems and methods compensate for uniformity drift. An illumination slit uniformity caused by system drift is measured. First positions of uniformity compensators are determined based on the uniformity. Uniformity compensators are moved to the first respective positions. A substrate is exposed.

Abstract: An apparatus and a method to hold a patterning device configured to impart a beam of radiation with a pattern in its cross-section. The apparatus includes a base configured to support the patterning device and an inner cover couplable to the base. The inner cover includes a restraining mechanism that, upon an application of a force external to the inner cover, is configured to provide an in-plane force to the patterning device to restrain movement of the patterning device, the in-plane force being substantially parallel to a patterning surface of the patterning device.

Abstract: A lithographic apparatus including a uniformity correction system is disclosed. The lithographic apparatus comprises an illumination system configured to condition a beam of radiation. The illumination system comprises a uniformity correction system located at a plane configured to receive a substantially constant pupil when illuminated with the beam of radiation. The uniformity correction system includes fingers configured to be movable into and out of intersection with a radiation beam so as to correct an intensity of respective portions of the radiation beam. A linear motor actuator arrangement drives the fingers to their respective appropriate positions to compensate for non-uniform illumination. Control is provided by a control system that precisely manipulates carriers of the fingers.

Abstract: A maskless lithography system has a patterning array assembly formed by a plurality of patterning arrays, each patterning array having a substrate. Each patterning array has a plurality of individually controllable elements to endow an incoming radiation beam with a patterned cross-section. To reduce the global unflatness of the patterning array assembly that is oriented in a first plane, the position of at least one substrate of a patterning array is adjusted to a second orientation. Reduction of the global unflatness of the patterning array assembly reduces a telecentricity error without introducing additional error into the maskless lithography system.

Abstract: Systems and methods are provides for measuring and correcting for a given telecentricity in a lithographic apparatus. A radiation beam is partitioned into a plurality of beams, each of which is modulated using an array of individually controllable elements and projected onto a portion of a substrate through a projection system. A set of alignment beams is transmitted simultaneously on paths similar to those traversed by the plurality of radiation beams, and a corresponding set of sensors respectively measures an angle and a position of the set of alignment beams proximate to an entrance of the projection system. An assembly of telecentricity control mirrors (TCM) adjusts appropriate ones of the plurality of radiation beams in response to the measurement to correct for any detected telecentricity errors.

Abstract: A lithographic apparatus including a uniformity correction system is disclosed. Fingers move into and out of intersection with a radiation beam to correct an intensity of the radiation beam. Actuating devices are coupled to the fingers. A width of a tip of each of the fingers is half that of a width of the actuating devices. Systems and methods compensate for uniformity drift. An illumination slit uniformity caused by system drift is measured. First positions of uniformity compensators are determined based on the uniformity. Uniformity compensators are moved to the first respective positions. A substrate is exposed.

Abstract: A choked-flow orifice gas gauge proximity sensor for sensing a difference between a reference surface standoff and a measurement surface standoff is disclosed. Unlike existing proximity sensors, the gas gauge proximity sensor of the present invention replaces the use of a mass flow controller with a choked flow orifice. The use of a choked flow orifice provides for reduced equipment cost and improved system reliability. A gas supply forces gas into the proximity sensor. The gas is forced through the choked flow orifice to achieve sonic conditions at which time the mass flow rate becomes largely independent of pressure variations. The flow of gas proceeds from the choked flow orifice into a sensor channel system. A mass flow sensor within the sensor channel system monitors flow rates to detect measurement standoffs that can be used to initiate a control action.

Abstract: Systems and methods are provided for measuring and correcting for a given telecentricity in lithographic apparatus. A radiation beam is partitioned into a plurality of beams, each of which is modulated using an array of individually controllable elements and projected onto a portion of a substrate through a projection system. A set of alignment beams are transmitted simultaneously on paths similar to those traversed by the plurality of radiation beams, and a corresponding set of sensors respectively measures an angle and a position of the set of alignment beams proximate an entrance of the projection system. An assembly of telecentricity control mirrors (TCMs) adjusts appropriate ones of the plurality of radiations beams in response to the measurement to correct for induced any detected telecentricity.

Abstract: A vacuum-driven gas gauge proximity sensor for sensing a difference between a reference surface standoff and a measurement surface standoff is disclosed. Unlike existing proximity sensors, the vacuum-driven gas gauge proximity sensor uses a vacuum to reverse the traditional flow of gas through a proximity sensor, such that gas flows inward across measurement and reference standoffs through measurement and reference nozzles. The conditioned ambient gas that is vacuumed into the reference and measurement nozzles flows through reference and measurement channels that are coupled at a junction into a single channel. The single channel is coupled to the vacuum that is used to evacuate the conditioned ambient gas through the proximity sensor. A bridge channel couples the reference and measurement channels. A mass flow sensor along the bridge channel monitors flow rates to detect measurement standoffs that can be used to initiate a control action. A pump-driven liquid flow proximity sensor is also disclosed.

Abstract: One or more patterning arrays are mounted to a mounting plate via height adjustment structures that enable the flatness of the active surfaces of the patterning arrays to be controlled. The height adjustment structures may comprise an array of piezoelectric actuators or screws. Alternatively, the backside of the patterning means may be polished to optical flatness and bonded by crystal bonding to an optically flat surface of a rigid mounting body.

Abstract: One or more patterning arrays are mounted to a mounting plate via height adjustment structures that enable the flatness of the active surfaces of the patterning arrays to be controlled. The height adjustment structures may comprise an array of piezoelectric actuators or screws. Alternatively, the backside of the patterning means may be polished to optical flatness and bonded by crystal bonding to an optically flat surface of a rigid mounting body.

Abstract: An apparatus, system, and method for configuring a dual isolation system lithography tool is described. An isolated base frame is supported by a non-isolated tool structure. A wafer stage component is supported by the isolated base frame. The wafer stage component provides a mount for a semiconductor wafer. A reticle stage component is supported by the isolated base frame. The reticle stage component provides a mount for a reticle. An isolated bridge provides a mount for a projection optics. The isolated bridge is supported by the isolated base frame. Alternatively, an isolated bridge is supported by a non-isolated base frame. A wafer stage component is supported by the non-isolated base frame. A reticle stage component is supported by the non-isolated base frame. An isolated optical relay is supported by the non-isolated base frame. The isolated optical relay includes one or more individually servo controlled framing blades.

Abstract: An apparatus, system, and method for configuring a dual isolation system lithography tool is described. An isolated base frame is supported by a non-isolated tool structure. A wafer stage component is supported by the isolated base frame. The wafer stage component provides a mount for a semiconductor wafer. A reticle stage component is supported by the isolated base frame. The reticle stage component provides a mount for a reticle. An isolated bridge provides a mount for a projection optics. The isolated bridge is supported by the isolated base frame. Alternatively, an isolated bridge is supported by a non-isolated base frame. A wafer stage component is supported by the non-isolated base frame. A reticle stage component is supported by the non-isolated base frame. An isolated optical relay is supported by the non-isolated base frame. The isolated optical relay includes one or more individually servo controlled framing blades.

Abstract: An apparatus, system, and method for configuring a dual isolation system lithography tool is described. An isolated base frame is supported by a non-isolated tool structure. A wafer stage component is supported by the isolated base frame. The wafer stage component provides a mount for a semiconductor wafer. A reticle stage component is supported by the isolated base frame. The reticle stage component provides a mount for a reticle. An isolated bridge provides a mount for a projection optics. The isolated bridge is supported by the isolated base frame. Alternatively, an isolated bridge is supported by a non-isolated base frame. A wafer stage component is supported by the non-isolated base frame. A reticle stage component is supported by the non-isolated base frame. An isolated optical relay is supported by the non-isolated base frame. The isolated optical relay includes one or more individually servo controlled framing blades.

Abstract: An apparatus, system, and method for configuring a dual isolation system lithography tool is described. An isolated base frame is supported by a non-isolated tool structure. A wafer stage component is supported by the isolated base frame. The wafer stage component provides a mount for a semiconductor wafer. A reticle stage component is supported by the isolated base frame. The reticle stage component provides a mount for a reticle. An isolated bridge provides a mount for a projection optics. The isolated bridge is supported by the isolated base frame. Alternatively, an isolated bridge is supported by a non-isolated base frame. A wafer stage component is supported by the non-isolated base frame. A reticle stage component is supported by the non-isolated base frame. An isolated optical relay is supported by the non-isolated base frame. The isolated optical relay includes one or more individually servo controlled framing blades.