Patents by Inventor PETER C. NAGLER

PETER C. NAGLER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10074764
    Abstract: A method of forming low-energy x-ray absorbers. Sensors may be formed on a semiconductor, e.g., silicon, wafer. A seed metal layer, e.g., gold, is deposited on the wafer and patterned into stem pads for electroplating. Stems, e.g., gold, are electroplated from the stem seed pads through a stem mask. An absorber layer, e.g., gold, is deposited on the wafer, preferably e-beam evaporated. After patterning the absorbers, absorber and stem mask material is removed, e.g., in a solvent bath and critical point drying.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: September 11, 2018
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Thomas R. Stevenson, Manuel A. Balvin, Kevin L. Denis, John E. Sadleir, Peter C. Nagler
  • Publication number: 20180090662
    Abstract: A method of forming low-energy x-ray absorbers. Sensors may be formed on a semiconductor, e.g., silicon, wafer. A seed metal layer, e.g., gold, is deposited on the wafer and patterned into stem pads for electroplating. Stems, e.g., gold, are electroplated from the stem seed pads through a stem mask. An absorber layer, e.g., gold, is deposited on the wafer, preferably e-beam evaporated. After patterning the absorbers, absorber and stem mask material is removed, e.g., in a solvent bath and critical point drying.
    Type: Application
    Filed: September 29, 2016
    Publication date: March 29, 2018
    Inventors: THOMAS R. STEVENSON, MANUEL A. BALVIN, KEVIN L. DENIS, JOHN E. SADLEIR, PETER C. NAGLER