Abstract: A multi-layer structure including an interlayer to relieve stress in the structure, a device including the structure, and a method of forming the device and structure are disclosed. The structure includes a substrate having a first coefficient of thermal expansion, an interlayer, and a coating having a second coefficient of thermal expansion. The interlayer reduces stress in the structure that would otherwise exist in the structure as a result of the difference in coefficients of thermal expansion of the substrate and the coating.

Abstract: Gas permeation barriers can be deposited on plastic or glass substrates by atomic layer deposition (ALD). The use of the ALD coatings can reduce permeation by many orders of magnitude at thicknesses of tens of nanometers with low concentrations of coating defects. These thin coatings preserve the flexibility and transparency of the plastic substrate. Such articles are useful in container, electrical and electronic applications.

Abstract: Gas permeation barriers can be deposited on plastic or glass substrates by atomic layer deposition (ALD). The use of the ALD coatings can reduce permeation by many orders of magnitude at thicknesses of tens of nanometers with low concentrations of coating defects. These thin coatings preserve the flexibility and transparency of the plastic substrate. Such articles are useful in container, electrical and electronic applications.

Abstract: This invention relates to novel, transparent oxide semiconductor thin film transistors (TFT's) and a process for making them.

Abstract: This invention relates to novel, transparent oxide semiconductor thin film transistors (TFT's) and a process for making them.