Patents by Inventor Peter Coppens
Peter Coppens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942326Abstract: A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.Type: GrantFiled: December 16, 2020Date of Patent: March 26, 2024Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Petr Kostelnik, Tomas Novak, Peter Coppens, Peter Moens, Abhishek Banerjee
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Publication number: 20220262940Abstract: A High Electron Mobility Transistor (HEMT) includes a source, a drain, a channel layer extending between the source and the drain, a barrier layer formed in contact with the channel layer, and extending between the source and the drain, and a gate formed in contact with, and covering at least a portion of, the barrier layer. The gate has gate edge portions and a gate central portion, and dielectric spacers may be formed over the gate edge portions, with the dielectric spacers having a first width therebetween proximal to the gate, and a second width therebetween distal from the gate, where the second width is longer than the first width.Type: ApplicationFiled: February 16, 2021Publication date: August 18, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Peter COPPENS, Peter MOENS, Joris BAELE
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Publication number: 20220216332Abstract: High Electron Mobility Transistors (HEMTs) are described with a circular gate, with a drain region disposed within the circular gates and circular source region disposed around the circular gates. The circular gate and the circular source region may form complete circles.Type: ApplicationFiled: January 7, 2021Publication date: July 7, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Abhishek BANERJEE, Peter MOENS, Herbert DE VLEESCHOUWER, Peter COPPENS
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Publication number: 20220189780Abstract: A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.Type: ApplicationFiled: December 16, 2020Publication date: June 16, 2022Applicant: Semiconductor Components Industries, LLCInventors: Petr KOSTELNIK, Tomas NOVAK, Peter COPPENS, Peter MOENS, Abhishek BANERJEE
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Publication number: 20220052163Abstract: In a high electron mobility transistor (HEMT), dielectric material may be included between edge portions of a HEMT gate and gate field plates in contact with a HEMT gate electrode. At least some portions of the HEMT gate and HEMT gate electrode remain in direct contact with one another, and the HEMT gate electrode and gate field plates may be further connected to a gate metal.Type: ApplicationFiled: October 1, 2020Publication date: February 17, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Peter COPPENS, Aurore CONSTANT, Piet VANMEERBEEK
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Publication number: 20220020857Abstract: A HEMT is described in which a gate contact interlayer is included between a surface dielectric and a gate contact. Further, source, drain, and gate contacts may be self-aligned and formed using a single or same metal and metallization process. A gate may be formed in contact with, and covering a portion of, a barrier layer of the HEMT, with a gate contact formed in contact with the gate. The gate contact interlayer may be formed between a surface dielectric formed on the barrier layer and at least a portion of the gate contact.Type: ApplicationFiled: October 1, 2020Publication date: January 20, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Aurore CONSTANT, Peter COPPENS
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Patent number: 10790374Abstract: Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. A passivation layer may be coupled between the AlGaN barrier and the first layer of the ohmic contact. The passivation layer may surround the ohmic contact.Type: GrantFiled: June 25, 2018Date of Patent: September 29, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Aurore Constant, Peter Coppens
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Patent number: 10741494Abstract: An electronic device can include a semiconductor layer and a contact structure forming an ohmic contact with the layer. In an embodiment, the semiconductor layer can include a III-N material, and the contact structure includes a first phase and a second phase, wherein the first phase includes Al, the second phase includes a metal, and the first phase contacts the semiconductor layer. In another embodiment, the semiconductor layer can be a monocrystalline layer having a surface along a crystal plane. The contact structure can include a polycrystalline material including crystals having surfaces that contact the surface of the monocrystalline layer, wherein a lattice mismatch between the surface of the monocrystalline layer and the surfaces of the crystals is at most 20%.Type: GrantFiled: November 7, 2018Date of Patent: August 11, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Aurore Constant, Peter Coppens, Joris Baele
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Patent number: 10680092Abstract: An electronic device can include a channel layer, a first carrier supply layer, a gate electrode of a HEMT, and a drain electrode of the HEMT. The HEMT can have a 2DEG along an interface between the channel and first carrier supply layers. In an aspect, the 2DEG can have a highest density that is the highest at a point between the drain and gate electrodes. In another aspect, the HEMT can further comprise first and second carrier supply layers, wherein the first carrier supply layer is disposed between the channel and second carrier supply layers. The second carrier supply layer be thicker at a location between the drain and gate electrodes. In a further aspect, a process of forming an electronic device can include the HEMT. In a particular embodiment, first and second carrier supply layers can be epitaxially grown from an underlying layer.Type: GrantFiled: October 1, 2018Date of Patent: June 9, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Peter Moens, Aurore Constant, Peter Coppens, Abhishek Banerjee
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Publication number: 20200144194Abstract: An electronic device can include a semiconductor layer and a contact structure forming an ohmic contact with the layer. In an embodiment, the semiconductor layer can include a III-N material, and the contact structure includes a first phase and a second phase, wherein the first phase includes Al, the second phase includes a metal, and the first phase contacts the semiconductor layer. In another embodiment, the semiconductor layer can be a monocrystalline layer having a surface along a crystal plane. The contact structure can include a polycrystalline material including crystals having surfaces that contact the surface of the monocrystalline layer, wherein a lattice mismatch between the surface of the monocrystalline layer and the surfaces of the crystals is at most 20%.Type: ApplicationFiled: November 7, 2018Publication date: May 7, 2020Applicant: Semiconductor Components Industries, LLCInventors: Aurore CONSTANT, Peter COPPENS, Joris BAELE
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Publication number: 20200105916Abstract: An electronic device can include a channel layer, a first carrier supply layer, a gate electrode of a HEMT, and a drain electrode of the HEMT. The HEMT can have a 2DEG along an interface between the channel and first carrier supply layers. In an aspect, the 2DEG can have a highest density that is the highest at a point between the drain and gate electrodes. In another aspect, the HEMT can further comprise first and second carrier supply layers, wherein the first carrier supply layer is disposed between the channel and second carrier supply layers. The second carrier supply layer be thicker at a location between the drain and gate electrodes. In a further aspect, a process of forming an electronic device can include the HEMT. In a particular embodiment, first and second carrier supply layers can be epitaxially grown from an underlying layer.Type: ApplicationFiled: October 1, 2018Publication date: April 2, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Peter MOENS, Aurore CONSTANT, Peter COPPENS, Abhishek BANERJEE
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Publication number: 20190334021Abstract: An electronic device can include a first layer including a III-V material, and a conductive layer including a first film that contacts the first layer, wherein the first film includes Ta—Si compound. In an embodiment, the electronic device can be a high electron mobility transistor (HEMT), the first layer can be a barrier layer between a channel layer and the source and drain electrodes. The source and drain electrodes are formed from the conductive layer. In a particular embodiment, the barrier layer can include AlGaN and be undoped or unintentional doped, and a Ta—Si compound can be the first film that contacts AlGaN within the barrier layer. The Ta—Si compound allows for relatively low contact resistance to be achieved without a relatively high temperature anneal or unusual sensitivity to the thickness of the first film that contains the Ta—Si compound.Type: ApplicationFiled: July 12, 2019Publication date: October 31, 2019Applicant: Semiconductor Components Industries, LLCInventors: Peter Coppens, Aurore Constant
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Patent number: 10394806Abstract: Techniques are disclosed for retrieving both data stored in relational form and data stored in XML form responsive to a single XQuery query. The techniques allow applications to retrieve relational data residing in various relational database management systems by using XQuery and XQuery for Java. In one such embodiment, an embeddable serverless computer component implements the techniques, and includes a combination of one or more relational adaptors and a mediator to access relational data and transform it into appropriate XML. The techniques are embeddable, and can be standards-based, database-independent, and operating-system independent. Optimized performance and scalability from desktop to enterprise applications are enabled as the number of users and/or database size increases.Type: GrantFiled: July 5, 2016Date of Patent: August 27, 2019Assignee: Progress Software CorporationInventors: Jonathan Robie, Peter Coppens, Marc Van Cappellen
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Publication number: 20190252509Abstract: An electronic device can include a first layer including a III-V material, and a conductive layer including a first film that contacts the first layer, wherein the first film includes Ta—Si compound. In an embodiment, the electronic device can be a high electron mobility transistor (HEMT), the first layer can be a barrier layer between a channel layer and the source and drain electrodes. The source and drain electrodes are formed from the conductive layer. In a particular embodiment, the barrier layer can include AlGaN, and TaSi can be the first film that contacts AlGaN within the barrier layer. The Ta—Si compound allows for relatively low contact resistance to be achieved without a relatively high temperature anneal or unusual sensitivity to the thickness of the first film that contains the Ta—Si compound.Type: ApplicationFiled: February 9, 2018Publication date: August 15, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Peter COPPENS, Aurore CONSTANT
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Publication number: 20180308946Abstract: Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. A passivation layer may be coupled between the AlGaN barrier and the first layer of the ohmic contact. The passivation layer may surround the ohmic contact.Type: ApplicationFiled: June 25, 2018Publication date: October 25, 2018Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Aurore CONSTANT, Peter COPPENS
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Patent number: 10032880Abstract: Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. The passivation layer may be coupled between the AlGaN barrier and the first layer of the ohmic contact. The passivation layer may surround the ohmic contact.Type: GrantFiled: October 10, 2016Date of Patent: July 24, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Aurore Constant, Peter Coppens
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Publication number: 20180102416Abstract: Implementations of an ohmic contact for a gallium nitride (GaN) device may include: a first layer including aluminum coupled directly with the GaN device; the GaN having a heterostructure with an undoped GaN channel and a semi-insulating aluminum gallium nitride (AlGaN) barrier, all the foregoing operatively coupled with a substrate; a second layer including titanium coupled over the first layer; and a third layer including an anti-diffusion material coupled with the second layer. Where a passivation layer is coupled between the AlGaN barrier and the first layer of the ohmic contact. Where the passivation layer surrounds the ohmic contact.Type: ApplicationFiled: October 10, 2016Publication date: April 12, 2018Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Aurore CONSTANT, Peter COPPENS
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Patent number: 9411851Abstract: Techniques are disclosed for retrieving both data stored in relational form and data stored in XML form responsive to a single XQuery query. The techniques allow applications to retrieve relational data residing in various relational database management systems by using XQuery and XQuery for Java. In one such embodiment, an embeddable serverless computer component implements the techniques, and includes a combination of one or more relational adaptors and a mediator to access relational data and transform it into appropriate XML. The techniques are embeddable, and can be standards-based, database-independent, and operating-system independent. Optimized performance and scalability from desktop to enterprise applications are enabled as the number of users and/or database size increases.Type: GrantFiled: April 29, 2013Date of Patent: August 9, 2016Assignee: Progress Software CorporationInventors: Jonathan Robie, Peter Coppens, Marc Van Cappellen
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Patent number: 8648410Abstract: An electronic device can include a gate electrode and a gate tap that makes an unlanded contact to the gate electrode. The electronic device can further include a source region and a drain region that may include a drift region. In an embodiment, the gate electrode has a height that is greater than its width. In another embodiment, the electronic device can include gate taps that spaced apart from each other, wherein at least some of the gate taps contact the gate electrode over the channel region. In a further embodiment, at a location where the gate tap contacts the gate electrode, the gate tap is wider than the gate electrode. A variety of processes can be used to form the electronic device.Type: GrantFiled: August 6, 2013Date of Patent: February 11, 2014Assignee: Semiconductor Components Industries, LLCInventors: Peter Coppens, Eddy De Backer, Freddy De Pestel, Gordon M. Grivna
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Publication number: 20130320428Abstract: An electronic device can include a gate electrode and a gate tap that makes an unlanded contact to the gate electrode. The electronic device can further include a source region and a drain region that may include a drift region. In an embodiment, the gate electrode has a height that is greater than its width. In another embodiment, the electronic device can include gate taps that spaced apart from each other, wherein at least some of the gate taps contact the gate electrode over the channel region. In a further embodiment, at a location where the gate tap contacts the gate electrode, the gate tap is wider than the gate electrode. A variety of processes can be used to form the electronic device.Type: ApplicationFiled: August 6, 2013Publication date: December 5, 2013Inventors: Peter COPPENS, Eddy De BACKER, Freddy De PESTEL, Gordon M. GRIVNA