Abstract: This disclosure describes, according to some implementations, a system and method for capturing sensor data for gait analysis of a subject using a robot. In an example method, a robot unit receives an instruction to monitor a gait of a subject; initializes a monitoring approach in response to receiving the instructions to begin monitoring the gait of the subject; collecting sensor data capturing movement of the subject along the pathway portion; and generating gait data for gait analysis based on the sensor data. In various embodiments, the monitoring approaches may include an active approach, a passive approach, or a hybrid approach.

Abstract: This disclosure describes, according to some implementations, a system and method for capturing sensor data for gait analysis of a subject using a robot. In an example method, a robot unit receives an instruction to monitor a gait of a subject; initializes a monitoring approach in response to receiving the instructions to begin monitoring the gait of the subject; collecting sensor data capturing movement of the subject along the pathway portion; and generating gait data for gait analysis based on the sensor data. In various embodiments, the monitoring approaches may include an active approach, a passive approach, or a hybrid approach.

Abstract: A method and structure for protection against latch-up is provided. Integrated circuits manufactured in accordance with the present disclosure feature well and substrate contacts of varying periodicity. Such a strategy enables maximizing the design of an integrated circuit as to the suppression of latch-up while concurrently optimizing available area on the chip allocable to circuit design. This method and structure is particularly beneficial to protect against cable discharge events and other discharge occurrences prone to injecting large current densities into an integrated circuit.

Abstract: A radiation detector formed using silicon-on-insulator technology. The radiation detector includes a silicon layer formed on an insulating substrate, wherein the silicon layer includes a PNPN structure, and a gate layer formed over the PNPN structure, wherein the gate layer includes a PN gate. Latch-up occurs in the radiation detector only in response to incident radiation.