Abstract: A system for slicing wafers from a monocrystalline semiconductor ingot includes a wire saw, a bond beam, the monocrystalline semiconductor ingot, and two sacrificial disks. The wire saw includes a wire web and wire guides operable to drive the wire web during a slicing operation. The bond beam is connected to the wire saw. The wire saw is operable to move the bond beam in a movement direction towards the wire web during the slicing operation to slice the wafers from the ingot. The ingot includes longitudinal end faces and a circumferential edge extending between the longitudinal end faces. The ingot is attached to the bond beam along the circumferential edge. One sacrificial disk is positioned adjacent each of the longitudinal end faces of the ingot to inhibit uncontrolled breakage of the wafers during the slicing operation.

Abstract: A method of slicing wafers from a monocrystalline semiconductor ingot includes attaching a circumferential edge of the ingot to a bond beam and positioning sacrificial disks adjacent longitudinal end faces of the ingot. One sacrificial disk is positioned adjacent each of the longitudinal end faces. The method also includes connecting the bond beam to a wire saw that includes a wire web and performing a slicing operation on the ingot by operating the wire saw to drive the wire web and move the bond beam and the ingot in a movement direction towards the wire web to slice the wafers from the ingot. The sacrificial disks operate to inhibit uncontrolled breakage of the wafers during the slicing operation.

Abstract: Cleaving systems and methods for cleaving a semiconductor structure. The systems and methods may involve a combination of thermally and mechanically induced stress. The cleave system may include a vacuum chuck which deflects the semiconductor structure and a heater which heats the structure while the vacuum is applied. The combination of thermal and mechanical stress causes the structure to cleave along a cleave plane.

Abstract: Systems for transporting a plurality of semiconductor structures, wafer boats for holding the plurality of semiconductor structures and methods for heating a set of semiconductor wafers. In some embodiments, the wafer boat frame is made of a metal and the combs are made of quartz. The wafer boats may include one or more combs that are able to float within a comb holder during heating of the wafer boat.

Abstract: Systems for transporting a plurality of semiconductor structures, wafer boats for holding the plurality of semiconductor structures and methods for heating a set of semiconductor wafers. In some embodiments, the wafer boat frame is made of a metal and the combs are made of quartz. The wafer boats may include one or more combs that are able to float within a comb holder during heating of the wafer boat.

Abstract: Polishing head assemblies for single side polishing of silicon wafers. The polishing head assemblies may include a template having a step at the edge of the template and/or a template support disposed between the template and the floor of the cap of the polishing head assembly. Some polishing head assemblies may include a cap having a thinner floor.

Abstract: A method of slicing wafers from a monocrystalline semiconductor ingot includes attaching a circumferential edge of the ingot to a bond beam and positioning sacrificial disks adjacent longitudinal end faces of the ingot. One sacrificial disk is positioned adjacent each of the longitudinal end faces. The method also includes connecting the bond beam to a wire saw that includes a wire web and performing a slicing operation on the ingot by operating the wire saw to drive the wire web and move the bond beam and the ingot in a movement direction towards the wire web to slice the wafers from the ingot.

Abstract: A system for slicing wafers from a monocrystalline semiconductor ingot includes a wire saw, a bond beam, the monocrystalline semiconductor ingot, and two sacrificial disks. The wire saw includes a wire web and wire guides operable to drive the wire web during a slicing operation. The bond beam is connected to the wire saw. The wire saw is operable to move the bond beam in a movement direction towards the wire web during the slicing operation to slice the wafers from the ingot. The ingot includes longitudinal end faces and a circumferential edge extending between the longitudinal end faces. The ingot is attached to the bond beam along the circumferential edge. One sacrificial disk is positioned adjacent each of the longitudinal end faces of the ingot to inhibit uncontrolled breakage of the wafers during the slicing operation.

Abstract: Systems and methods for controlling the surface profiles of wafers sliced in a wire saw machine. The systems and methods are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered for example by changing the temperature of a temperature-controlling fluid circulated in fluid communication with side walls attached to a fixed bearing sidewall of the wire saw.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. Based on the measured amount of displacement of the sidewall, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.

Abstract: Methods for controlling the surface profiles of wafers sliced from an ingot with a wire saw include measuring an amount of displacement of a sidewall of a frame of the wire saw. The sidewall is connected to a bearing of a wire guide supporting a wire web in the wire saw. Based on the measured amount of displacement of the sidewall, a pressure profile for adjusting a position of the sidewall is determined by a computing device. Pressure is applied to the sidewall using a displacement device according to the determined pressure profile to control the position of the sidewall.

Abstract: Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.