Abstract: Improved processing systems and methods are provided for wet and dry processing of a semiconductor wafer. Provided is an enclosed chamber for processing a semiconductor wafer within a processing space and a drainage system for directing processing fluids out of the processing space. The enclosed chamber includes a top plate and a bottom plate, which physically confine the processing fluids within a relatively small, enclosed processing space. This forces the processing fluids to flow radially across the wafer surface(s) without the need to rotate the wafer. The drainage system contains a conduit that is downstream from the processing space and configured to retain a portion of a processing fluid dispensed within the processing space. The portion retained within the conduit provides a pressure resistance against the processing fluid(s) dispensed within the processing space to improve wet and dry processing of the wafer surfaces.

Abstract: A method for processing a substrate includes dispensing isopropyl alcohol (IPA) onto the substrate, providing the substrate into a processing chamber, pressurizing the processing chamber to a pressure above 5 MPa, removing the IPA on the substrate by displacing the IPA with liquid carbon dioxide (CO2), and removing the liquid CO2 as gaseous CO2 by venting the processing chamber.

Abstract: A method for processing a substrate includes dispensing a processing fluid onto the substrate in a processing chamber from an opening through an upper surface of the processing chamber and displacing the processing fluid in the processing chamber with a dry fluid injected through the opening as a wavefront pulse. The opening is near an edge of the substrate. The dry fluid displaces the processing fluid through a conduit opposite the opening.

Abstract: A method for processing a substrate includes providing the substrate into a processing chamber, adding a processing fluid into the processing chamber, adding a dry fluid to the processing chamber while draining the processing fluid from the processing chamber, and releasing the dry fluid from the processing chamber in a gaseous phase.

Abstract: Various embodiments of wet processing systems, chemical supply systems and methods are provided herein to quickly and efficiently adjust a temperature of at least one processing liquid provided to a semiconductor substrate during a wet process. In the disclosed embodiments, processing liquid(s) flow through the chemical supply system at or near room temperature and the temperature of the processing liquid(s) is adjusted at or near the location(s) at which the processing liquid(s) are supplied to at least one surface of a semiconductor substrate (e.g., at or near the point of use) by supplying a variety of heated and/or cooled fluids to the processing liquid(s).

Abstract: Improved wafer chuck designs and methods are provided herein for retaining a processing liquid on a surface of a semiconductor substrate during a puddle process. More specifically, the present disclosure provides various embodiments of wafer chucks that reshape a surface of a semiconductor substrate to ensure that the substrate surface is concave (or completely flat) before a processing liquid is dispensed onto the substrate surface to form a puddle of the processing liquid on the substrate surface. By providing the substrate surface with a concave (or completely flat) shape, the embodiments disclosed herein provide complete chemical coverage across the substrate surface during a puddle process, retain the puddle on the substrate surface and prevent the puddle from spilling over the substrate edge.

Abstract: An apparatus includes a first holding tank holding first nanoparticles, a second holding tank holding second nanoparticles, a third holding tank holding water, a fourth holding tank holding an acid, and a first mixing tank operably coupled to the first holding tank, the second holding tank, and the third holding tank. First mixing tank mixes and holds a nanoparticle-water mixture of portions of the water, the first nanoparticles, and the second nanoparticles. Apparatus further includes a second mixing tank operably coupled to the first mixing tank and the fourth holding tank, an etch bath operably coupled to the second mixing tank, and a sensor operably coupled to the etch bath. Second mixing tank mixes and holds an etchant solution including a mixture of a portion of the acid and the nanoparticle-water mixture. Etch bath holds the etchant solution. Sensor monitors an etch selectivity of the etchant solution.

Abstract: Improved wafer chuck designs, wet processing systems using such wafer chuck designs and methods are provided herein for retaining a processing liquid on a surface of a semiconductor substrate during a puddle process. More specifically, the present disclosure provides various embodiments of wafer chucks that reshape a surface of a semiconductor substrate to ensure that the substrate surface is concave (or completely flat) before a processing liquid is dispensed onto the substrate surface to form a puddle of the processing liquid on the substrate surface. By providing the substrate surface with a concave (or completely flat) shape, the embodiments disclosed herein provide complete chemical coverage across the substrate surface during a puddle process, retain the puddle on the substrate surface and prevent the puddle from spilling over the substrate edge.

Abstract: Improved wafer chuck designs and methods are provided herein for retaining a processing liquid on a surface of a semiconductor substrate during a puddle process. More specifically, the present disclosure provides various embodiments of wafer chucks that reshape a surface of a semiconductor substrate to ensure that the substrate surface is concave (or completely flat) before a processing liquid is dispensed onto the substrate surface to form a puddle of the processing liquid on the substrate surface. By providing the substrate surface with a concave (or completely flat) shape, the embodiments disclosed herein provide complete chemical coverage across the substrate surface during a puddle process, retain the puddle on the substrate surface and prevent the puddle from spilling over the substrate edge.

Abstract: Various embodiments of processes and methods are provided herein for processing a semiconductor substrate. More specifically, improved processes and methods are provided for preventing damage to, or contamination on, a peripheral edge region and/or backside of a semiconductor substrate as the frontside of the substrate undergoes processing. In the disclosed embodiments, a sacrificial film is spin-on deposited within the peripheral edge region and/or along the backside surface before a process is performed on the frontside of the substrate. The sacrificial film protects the peripheral edge region and/or backside of the substrate and is removed from the substrate after processing.

Abstract: Improved puddle processes and methods are provided herein for retaining a processing liquid on a surface of a semiconductor substrate. More specifically, improved methods are provided herein for retaining a puddle within a center region of a semiconductor substrate while the substrate is stationary, or rotating at relatively low rotational speeds. In the disclosed embodiments, a puddle is retained within a center region of the semiconductor substrate by a thin film, which is deposited within a peripheral edge region of the substrate before a processing liquid is dispensed within the center region of the substrate to form the puddle.

Abstract: Improved processing systems and methods are provided for wet and dry processing of a semiconductor wafer. Provided is an enclosed chamber for processing a semiconductor wafer within a processing space and a drainage system for directing processing fluids out of the processing space. The enclosed chamber includes a top plate and a bottom plate, which physically confine the processing fluids within a relatively small, enclosed processing space. This forces the processing fluids to flow radially across the wafer surface(s) without the need to rotate the wafer. The drainage system contains a conduit that is downstream from the processing space and configured to retain a portion of a processing fluid dispensed within the processing space. The portion retained within the conduit provides a pressure resistance against the processing fluid(s) dispensed within the processing space to improve wet and dry processing of the wafer surfaces.

Abstract: Improved processing systems and methods are provided for wet and dry processing of a semiconductor wafer. Provided is an enclosed chamber for processing a semiconductor wafer within a processing space and a drainage system for directing processing fluids out of the processing space. The enclosed chamber includes a top plate and a bottom plate, which physically confine the processing fluids within a relatively small, enclosed processing space. This forces the processing fluids to flow radially across the wafer surface(s) without the need to rotate the wafer. The drainage system contains a conduit that is downstream from the processing space and configured to retain a portion of a processing fluid dispensed within the processing space. The portion retained within the conduit provides a pressure resistance against the processing fluid(s) dispensed within the processing space to improve wet and dry processing of the wafer surfaces.

Abstract: Improved puddle processes and methods are provided herein for retaining a processing liquid on a surface of a semiconductor substrate. More specifically, improved methods are provided herein for retaining a puddle within a center region of a semiconductor substrate while the substrate is stationary, or rotating at relatively low rotational speeds. In the disclosed embodiments, a puddle is retained within a center region of the semiconductor substrate by a thin film, which is deposited within a peripheral edge region of the substrate before a processing liquid is dispensed within the center region of the substrate to form the puddle.

Abstract: Improved processing systems and methods are provided for wet and dry processing of a semiconductor wafer. Provided is an enclosed chamber for processing a semiconductor wafer within a processing space and a drainage system for directing processing fluids out of the processing space. The enclosed chamber includes a top plate and a bottom plate, which physically confine the processing fluids within a relatively small, enclosed processing space. This forces the processing fluids to flow radially across the wafer surface(s) without the need to rotate the wafer. The drainage system contains a conduit that is downstream from the processing space and configured to retain a portion of a processing fluid dispensed within the processing space. The portion retained within the conduit provides a pressure resistance against the processing fluid(s) dispensed within the processing space to improve wet and dry processing of the wafer surfaces.