Abstract: A method of scheduling assignment of resources to a plurality of applications includes: determining shares of the resources assigned to each application during a first period; determining shares of the resources assigned to each application during a second period that occurs after the first period; determining an imbalance value for each application that is based on a sum of the shares assigned to the corresponding application over both periods; and considering requests of the applications for resources in an order that depends on a result of comparing the imbalance values of the applications.

Abstract: A method of scheduling assignment of resources to a plurality of applications includes: determining shares of the resources assigned to each application during a first period; determining shares of the resources assigned to each application during a second period that occurs after the first period; determining an imbalance value for each application that is based on a sum of the shares assigned to the corresponding application over both periods; and considering requests of the applications for resources in an order that depends on a result of comparing the imbalance values of the applications.

Abstract: Techniques for optimizing power production from photo-voltaic systems using, e.g., inductive coupling, are provided. In one aspect, a method of optimizing photo-voltaic generated power from a string of photo-voltaic devices is provided. The method includes the step of: providing corrective power to at least one photovoltaic device in the string of photo-voltaic devices to boost performance of the at least one photovoltaic device and thereby increase overall the photo-voltaic generated power from the string of photo-voltaic devices, wherein the corrective power is from about 1% to about 5%, and ranges therebetween, of the photo-voltaic generated power from the string of photo-voltaic devices. A system for optimizing photo-voltaic generated power from a string of photo-voltaic devices and a method for use thereof are also provided.

Abstract: A device for dissipating heat from a photovoltaic cell is disclosed. A first thermally conductive layer receives heat from the photovoltaic cell and reduces a density of the received heat. A second thermally conductive layer conducts heat from the first thermally conductive layer to a surrounding environment. An electrically isolating layer thermally couples the first thermally conductive layer and the second thermally conductive layer.

Abstract: A device for dissipating heat from a photovoltaic cell is disclosed. A first thermally conductive layer receives heat from the photovoltaic cell and reduces a density of the received heat. A second thermally conductive layer conducts heat from the first thermally conductive layer to a surrounding environment. An electrically isolating layer thermally couples the first thermally conductive layer and the second thermally conductive layer.

Abstract: Techniques for optimizing power production from photo-voltaic systems using, e.g., inductive coupling, are provided. In one aspect, a method of optimizing photo-voltaic generated power from a string of photo-voltaic devices is provided. The method includes the step of: providing corrective power to at least one photovoltaic device in the string of photo-voltaic devices to boost performance of the at least one photovoltaic device and thereby increase overall the photo-voltaic generated power from the string of photo-voltaic devices, wherein the corrective power is from about 1% to about 5%, and ranges therebetween, of the photo-voltaic generated power from the string of photo-voltaic devices. A system for optimizing photo-voltaic generated power from a string of photo-voltaic devices and a method for use thereof are also provided.

Abstract: A method of tracking the sun is disclosed. A measurement of a gravity vector is obtained in a frame of reference of a solar collector rotatable with respect to an earth center of reference. A measurement of a magnetic direction vector is obtained in the frame of reference of the solar collector. The orientation of the solar collector is determined from the obtained measurement of the gravity vector and the obtained measurement of the magnetic direction. The orientation of the solar collector is altered in order to track the sun.

Abstract: A method of tracking the sun is disclosed. A measurement of a gravity vector is obtained in a frame of reference of a solar collector rotatable with respect to an earth center of reference. A measurement of a magnetic direction vector is obtained in the frame of reference of the solar collector. The orientation of the solar collector is determined from the obtained measurement of the gravity vector and the obtained measurement of the magnetic direction. The orientation of the solar collector is altered in order to track the sun.

Abstract: A device for dissipating heat from a photovoltaic cell is disclosed. A first thermally conductive layer receives heat from the photovoltaic cell and reduces a density of the received heat. A second thermally conductive layer conducts heat from the first thermally conductive layer to a surrounding environment. An electrically isolating layer thermally couples the first thermally conductive layer and the second thermally conductive layer.

Abstract: A device for dissipating heat from a photovoltaic cell is disclosed. A first thermally conductive layer receives heat from the photovoltaic cell and reduces a density of the received heat. A second thermally conductive layer conducts heat from the first thermally conductive layer to a surrounding environment. An electrically isolating layer thermally couples the first thermally conductive layer and the second thermally conductive layer.

Abstract: A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As.

Abstract: Heterostructures having a large lattice mismatch between an upper epilayer and a substrate and a method of forming such structures having a thin intermediate layer are disclosed. The strain due to a lattice mismatch between the intermediate layer and the substrate is partially relieved by the formation of edge type dislocations which are localized and photoelectrically inactive. Growth of the intermediate layer is interrupted before it reaches the thickness at which the left over strain is relieved by 60 degree type threading dislocations. The upper epilayer is then grown in an unstrained and defect-free condition upon the intermediate layer where the unstrained lattice constant of the epilayer is about the same as the partially relieved strain lattice constant or the intermediate layer. An unstrained defect-free epilayer of InGaAs has been grown on a GaAs substrate with an intermediate layer 3-10 nm in thickness of InAs.

Abstract: A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a band offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

Abstract: Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.

Abstract: Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.

Abstract: An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap>1 electron volt in a layer between 20 and 200 Angstroms thick. A GaAs covered by GaAlAs converter with a 100 Angstrom Si layer over the GaAlAs is illustrated.

Abstract: Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.

Abstract: A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic material is provided. A GaAs substrate is heated in an oxygen-free atmosphere at high temperature with hydrogen sulfide, producing a pristine surface with a coating of gallium sulfide covered with a 1,000 nanometer covering of low temperature plasma enhanced chemical vapor deposited silicon dioxide.

Abstract: A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.

Abstract: A 10.sup.-6 ohm cm.sup.2 ohmic contact is provided by formation of a 20-50 Angstroms deep surface region with a net donor density of higher than 5.times.10.sup.19 /cc. An amphoteric dopant of Si or Ge is incorporated in a pinned Fermi level condition so that an enhanced surface donor concentration occurs.