Abstract: A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap. The polishing head has a top portion and a recess along a bottom portion. The recess has a recessed surface. Holes extend from the top portion through the recessed surface. The cap is positioned within the recess and the cap has an annular wall and a floor extending across the annular wall. The annular wall has apertures corresponding to the holes. The floor is spaced from the recessed surface to form a chamber therebetween. The polishing head assembly also includes a band that circumscribes a portion of the annular wall. The holes and the corresponding apertures receive fasteners to removably secure the annular wall to the recessed surface.

Abstract: Systems for implanting semiconductor structures with ions are disclosed. The semiconductor structure is positioned on a heatsink and ions are implanted through a front surface of the semiconductor structure to form a damage region in the semiconductor structure. A parameter related to the coefficient of friction of the heatsink is measured. The parameter is compared to a baseline range.