Abstract: A method for determining the characteristics of a doped semiconductor substrate is disclosed, wherein a scanning probe microscope, preferably an atomic force microscope, is used to move a probe across a sample surface gathering electrical measurements at many locations. The probe tip is conductive and is connected to a control circuit that applies a voltage to the probe and to an electrode fixed to the semiconductor substrate. Preferably, the current that flows through the sample is measured and saved, together with the position of the probe on the surface of the sample. In this manner, the characteristics of the doped sample can be determined at many different locations with many different degrees of doping. The sample is prepared by doping its top surface, then machining off the top surface to provide access to the sample at different doping depths.

Abstract: Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing at least one conductor in contact with the semi-conductor element using a scanning proximity microscope while injecting a substantially zero current in the semiconductor element with the conductor, measuring an electrical potential in the conductor while injecting a substantially zero current in the semiconductor element with the conductor, changing the position of the conductor, and repeating the measuring and changing steps.

Abstract: Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing at least one conductor in contact with the semi-conductor element using a scanning proximity microscope while injecting a substantially zero current in the semiconductor element with the conductor, measuring an electrical potential in the conductor while injecting a substantially zero current in the semiconductor element with the conductor, changing the position of the conductor, and repeating the measuring and changing steps.

Abstract: Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing one or more conductors in contact with the semi-conductor element using a scanning proximity microscope, calibrating the contact force between the conductors and the semiconductor element and measuring an electrical potential in the semi-conductor element with at least one of the conductors while injecting a substantially zero current in the semiconductor element. To measure the electrical potential distribution within the semiconductor, the position of at least one of the conductors is changed and the electric potential re-measured.

Abstract: A method for measuring the resistance or conductivity between two or more conductors which are placed against a semiconductor element, the conductors are placed either in contact with the top surface or one conductor is placed in contact with the top surface and the other conductor is in the form of a large ohmic contact applied to the bottom surface of the semiconductor element. In order to bring the contact resistance between the top conductor(s) and the element to, and hold it at, a predetermined value during measuring, the conductor(s) are held at a constant distance and/or under constant pressure relative to the semiconductor element by use of a scanning proximity microscope. The top conductor may have a boron implanted diamond tip. The carrier profile of the semiconductor element is determined from previously derived calibration curves.