Patents by Inventor Peter Deelman

Peter Deelman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and device for growing pseudomorphic A1InAsSb on InAs
    Patent number: 8242538
    Abstract: A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.
    Type: Grant
    Filed: May 11, 2011
    Date of Patent: August 14, 2012
    Assignee: HRL Laboratories, LLC
    Inventors: Peter Deelman, Ken Elliott, David Chow
  • Method and device for growing pseudomorphic AlInAsSb on InAs
    Patent number: 7968435
    Abstract: A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.
    Type: Grant
    Filed: June 24, 2009
    Date of Patent: June 28, 2011
    Assignee: HRL Laboratories, LLC
    Inventors: Peter Deelman, Ken Elliott, David Chow
  • Thermal management substrate
    Patent number: 7695564
    Abstract: The present invention is directed to a method for fabricating a thermal management substrate having a Silicon (Si) layer on a polycrystalline diamond film, or on a diamond-like-carbon (DLC) film. The method comprises acts of fabricating a separation by implantation of oxygen (SIMOX) wafer; depositing a polycrystalline diamond film onto the SIMOX wafer; and removing various layers of the SIMOX wafer to leave a Si overlay layer that is epitaxially fused with the polycrystalline diamond film. In the case of the DLC film, the method comprises acts of ion-implanting a Si wafer; depositing an amorphous DLC film onto the Si wafer; and removing various layers of the Si wafer to leave a Si overlay structure epitaxially fused with the DLC film.
    Type: Grant
    Filed: February 3, 2005
    Date of Patent: April 13, 2010
    Assignee: HRL Laboratories, LLC
    Inventors: Miroslav Micovic, Peter Deelman, Yakov Royter
  • Method and device for growing pseudomorphic AlInAsSb on InAs
    Patent number: 7598158
    Abstract: A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.
    Type: Grant
    Filed: June 5, 2006
    Date of Patent: October 6, 2009
    Assignee: HRL Laboratories, LLC
    Inventors: Peter Deelman, Ken Elliott, David Chow