Patents by Inventor Peter Dowben
Peter Dowben has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9324960Abstract: Novel semiconducting polymers have been formed via the electron-induced cross-linking of orthocarborane B10C2H2 and 1,4-diaminobenzene. The films were formed by co-condensation of the molecular precursors and 200 eV electron-induced cross-linking under ultra-high vacuum (UHV) conditions. Ultraviolet photoemission spectra show that the compound films display a shift of the valence band maximum from ˜4.3 eV below the Fermi level for pure boron carbide to ?1.7 eV below the Fermi level when diaminobenzene is added. The surface photovoltage effect decreases with decreasing B/N atomic ratio. A neutron detector comprises the polymer as the p-type semiconductor to be paired with an n-type semiconductor.Type: GrantFiled: June 4, 2012Date of Patent: April 26, 2016Assignee: QUANTUM DEVICES, LLCInventors: Peter Dowben, Jeffry Kelber
-
Publication number: 20160093746Abstract: A voltage switchable coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A chrome oxide layer is formed on the cobalt by MBE at room at UHV at room temperature. There was thin cobalt oxide interface between the chrome oxide and the cobalt. Other magnetic materials may be employed. A few ML field of graphene is deposited on the chrome oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.Type: ApplicationFiled: April 3, 2015Publication date: March 31, 2016Applicant: QUANTUM DEVICES, LLCInventors: Jeffry KELBER, Peter DOWBEN
-
Patent number: 9276040Abstract: Majority and minority logic can be implemented by voltage controlled switching of magneto-electric layers of magneto electric magnetic tunnel junction (ME-MTJ) devices. A ME-MTJ device includes an exchange bias-controlled switching element and a pinned ferromagnetic layer on an antiferromagnetic layer. In one case, the switching element includes a magneto electric (ME) layer on a free ferromagnetic (FM) layer, and is separated from the pinned FM layer by an insulator. To implement a majority or minority logic gate a single ME-MTJ device may be used where the device is provided with three electrodes contacting the ME layer in an overlaying relationship with the ME layer. The orientation of the pinned FM layer indicates whether the gate is a majority or a minority logic gate.Type: GrantFiled: January 16, 2015Date of Patent: March 1, 2016Assignees: BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA, BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM, THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORKInventors: Andrew Marshall, Peter A. Dowben, Jonathan P. Bird
-
Publication number: 20150243414Abstract: A magnetoelectric composition of boron and chromia is provided. The boron and chromia alloy can contain boron doping of 1%-10% in place of the oxygen in the chromia. The boron-doped chromia exhibits an increased critical temperature while maintaining magnetoelectric characteristics. The composition can be fabricated by depositing chromia in the presence of borane. The boron substitutes oxygen in the chromia, enhancing the exchange energy and thereby increasing Neel temperature.Type: ApplicationFiled: February 23, 2015Publication date: August 27, 2015Inventors: CHRISTIAN BINEK, PETER DOWBEN, KIRILL BELASHCHENKO, ALEKSANDER WYSOCKI, SAI MU, MIKE STREET
-
Patent number: 8860161Abstract: Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 ?m Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li2B4O7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.Type: GrantFiled: July 5, 2012Date of Patent: October 14, 2014Assignee: Quantum Devices, LLCInventors: Peter A. Dowben, Jinke Tang, David Wisbey
-
Publication number: 20140217375Abstract: Novel semiconducting polymers have been formed via the electron-induced cross-linking of orthocarborane B10C2H2 and 1,4-diaminobenzene. The films were formed by co-condensation of the molecular precursors and 200 eV electron-induced cross-linking under ultra-high vacuum (UHV) conditions. Ultraviolet photoemission spectra show that the compound films display a shift of the valence band maximum from ˜4.3 eV below the Fermi level for pure boron carbide to ?1.7 eV below the Fermi level when diaminobenzene is added. The surface photovoltage effect decreases with decreasing B/N atomic ratio. A neutron detector comprises the polymer as the p-type semiconductor to be paired with an n-type semiconductor.Type: ApplicationFiled: June 4, 2012Publication date: August 7, 2014Applicant: QUANTUM DEVICES, LLCInventors: Peter Dowben, Jeffry Kelber
-
Publication number: 20140203382Abstract: Boron carbide polymers prepared from orthocarborane icosahedra cross-linked with a moiety A wherein A is selected from the group consisting of benzene, pyridine. 1, 4-diaminobenzene and mixtures thereof give positive magnetoresistance effects of 30%-80% at room temperature. The novel polymers may be doped with transitional metals to improve electronic and spin performance. These polymers may be deposited by any of a variety of techniques, and may be used in a wide variety of devices including magnetic tunnel junctions, spin-memristors and non-local spin valves.Type: ApplicationFiled: December 6, 2013Publication date: July 24, 2014Applicant: Quantum Devices, LLCInventors: JEFFRY KELBER, Peter Dowben
-
Publication number: 20140170779Abstract: A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co3O4 (111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.Type: ApplicationFiled: February 25, 2014Publication date: June 19, 2014Applicant: Quantum Devices, LLCInventors: Jeffry A. Kelber, Peter Dowben
-
Patent number: 8748957Abstract: A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co3O4(111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.Type: GrantFiled: January 5, 2012Date of Patent: June 10, 2014Assignee: Quantum Devices, LLCInventors: Jeffry Kelber, Peter Dowben
-
Publication number: 20130233368Abstract: A thermoelectric converter is provided where an n-type boron carbide element is paired with a p-type boron carbide element and placed between a eat sink and a high temperature are, such as the ocean in which a submarine operates, and the interior of that submarine, respectively. Boron carbide elements suitable for use in this invention are deposited from meta carborane (n-type) together with dopants to emphasize n-type character, such as chromocene, and orthocarborane, together with dopants to emphasize p-type character, such as 1,4 diaminobenzene to form the p-type element.Type: ApplicationFiled: September 6, 2012Publication date: September 12, 2013Applicant: QUANTUM DEVICES, LLCInventor: PETER DOWBEN
-
Publication number: 20130193426Abstract: The invention relates to the use of zwitterionic molecules for forming a hole or electron transport layer. The preferred zwitterionic molecules of the invention are derivatives of p-benzoquinonemonoimines. The invention is useful in the field of electronic devices in particular.Type: ApplicationFiled: August 23, 2011Publication date: August 1, 2013Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITY OF NEBRASKA LINCOLN, UNIVERSITE DE STRASBOURGInventors: Bernard Doudin, Pierre Braunstein, Lucie Routaboul, Guillaume Dalmas, Zhengzheng Zhang, Peter Dowben
-
Publication number: 20130175588Abstract: A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co3O4 (111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.Type: ApplicationFiled: January 5, 2012Publication date: July 11, 2013Applicant: QUANTUM DEVICES CORP.Inventors: JEFFRY KELBER, PETER DOWBEN
-
Publication number: 20130009262Abstract: Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 ?m Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li2B4O7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.Type: ApplicationFiled: July 5, 2012Publication date: January 10, 2013Applicant: QUANTUM DEVICES, LLCInventors: PETER A. DOWBEN, Jinke Tang, David Wisbey
-
Publication number: 20100224912Abstract: A heterojunction is provided for spin electronics applications. The heterojunction includes an n-type silicon semiconductor and a hydrogenated diamond-like carbon film deposited on the n-type silicon semiconductor. The hydrogenated diamond-like carbon film is doped with chromium. The concentration of the chromium dopant in the chromium doped diamond-like carbon film may be configured such that the heterojunction has an increase in forward bias current ranging from about 50% to about 150% in a small magnetic field at about room temperature. The heterojunction has spin electronics properties at about room temperature.Type: ApplicationFiled: November 10, 2009Publication date: September 9, 2010Inventors: Varshni Singh, Peter Dowben, Ihor Ketsman, Juan Colon-Santana, Yaroslav Losovyj, Vadim Palshin
-
Patent number: 7368794Abstract: Boron carbide heteroisomer semiconductor devices are used as particle detectors. The boron carbide semiconductor devices produce electric current in response to incident particles, such as alpha particles, neutrons, or photons.Type: GrantFiled: August 2, 2005Date of Patent: May 6, 2008Inventors: Anthony N. Caruso, Peter A. Dowben, Jennifer I. Brand
-
Publication number: 20060131589Abstract: Boron carbide heteroisomer semiconductor devices are used as particle detectors. The boron carbide semiconductor devices produce electric current in response to incident particles, such as alpha particles, neutrons, or photons.Type: ApplicationFiled: August 2, 2005Publication date: June 22, 2006Inventors: Anthony Caruso, Peter Dowben, Jennifer Brand
-
Patent number: 6774013Abstract: A non-doped n-type boron carbide semiconductor polytype and a method of fabricating the same is provided. The n-type boron carbide polytype may be used in a device for detecting neutrons, electric power conversion, and pulse counting. Such a device may include an n-type boron carbide layer coupled with a substrate where the boron carbide may be an electrically active part of the device. This n-type boron carbide layer may be fabricated through the use of closo-1,7-dicarbadodecaborane (metacarborane). Specifically, the non-doped n-type polytype may be fabricated using SR-CVD by placing the substrate in a vacuum chamber, cooling the substrate, introducing metacarborane into the chamber, adsorbing the metacarborane onto the surface of the substrate through the use of incident X-ray radiation or electron beam irradiation, decomposing the adsorbed metacarborane, and allowing the substrate to reach ambient temperature. The n-type polytype of the present invention may also be fabricated by PECVD.Type: GrantFiled: November 6, 2002Date of Patent: August 10, 2004Assignee: Board of Regents of University of NebraskaInventors: Peter A. Dowben, Anthony N. Caruso, Yaroslav Losovyj
-
Patent number: 6771730Abstract: A boron carbide solid state neutron detector and method of using the detector is disclosed, wherein the detector includes a layer of boron carbide wherein the boron carbide layer is an electrically active part of the detection device, a sensing mechanism inherent to said boron carbide layer, wherein the sensing mechanism detects changes in the boron carbide layer caused by the interception of neutrons and a monitoring device coupled to the sensing mechanics.Type: GrantFiled: September 6, 2001Date of Patent: August 3, 2004Assignee: Board of Regents of University of NebraskaInventors: Peter A. Dowben, Shireen Adenwalla, Brian W. Robertson, Mengjun Bai
-
Publication number: 20040084690Abstract: A non-doped n-type boron carbide semiconductor polytype and a method of fabricating the same is provided. The n-type boron carbide polytype may be used in a device for detecting neutrons, electric power conversion, and pulse counting. Such a device may include an n-type boron carbide layer coupled with a substrate where the boron carbide may be an electrically active part of the device. This n-type boron carbide layer may be fabricated through the use of closo-1,7-dicarbadodecaborane (metacarborane). Specifically, the non-doped n-type polytype may be fabricated using SR-CVD by placing the substrate in a vacuum chamber, cooling the substrate, introducing metacarborane into the chamber, adsorbing the metacarborane onto the surface of the substrate through the use of incident X-ray radiation or electron beam irradiation, decomposing the adsorbed metacarborane, and allowing the substrate to reach ambient temperature. The n-type polytype of the present invention may also be fabricated by PECVD.Type: ApplicationFiled: November 6, 2002Publication date: May 6, 2004Inventors: Peter A. Dowben, Anthony N. Caruso, Yaroslav Losovyj
-
Patent number: 6600177Abstract: The present invention relates to the fabrication of a boron carbide/boron semiconductor devices. The results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron carbide (B5C) acts as a p-type material. Both boron and boron carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement. We have doped boron carbide grown by plasma enhanced chemical vapor deposition. The source gas closo-1,2-dicarbadecaborane (orthocarborane) was used to grow the boron carbide while nickelocene (Ni(C5H5)2) was used to introduce nickel into the growing film. The doping of nickel transformed a B5C material p-type relative to lightly doped n-type silicon to an n-type material. Both p-n heterojunction diodes and n-p heterojunction diodes with n- and p-type Si [1,1,1] respectively.Type: GrantFiled: November 16, 2001Date of Patent: July 29, 2003Assignee: Board of Regents, University of Nebraska-LincolnInventor: Peter A. Dowben