Patents by Inventor Peter Duane
Peter Duane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240098076Abstract: A third-party server, delegated by organizations to manage application environment, may maintain a plurality of guided workflow plans. At least one of the guided workflow plans may include one or more steps associated with setting up an interaction control policy. The third-party server may receive an interaction report associated with the organization. The interaction report may include metadata of one or more devices that interacted with other devices. The third-party server may identify a particular device to which existing interaction control policies of the organization are inapplicable. The third-party server may search for additional out-of-band information of the particular device using the metadata in the interaction report. The third-party server may select an applicable guided workflow plan for setting up an applicable interaction control policy for the particular device. A guided workflow may be presented via a graphical user interface according to the applicable guided workflow plan.Type: ApplicationFiled: May 19, 2023Publication date: March 21, 2024Inventors: Seth Joshua Blank, Ashley Duane Wilson, Peter Martin Goldstein, Jack William Abbott, Robert Benjamin Barclay
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Publication number: 20240075153Abstract: Immunoconjugates of the Formula (I) include a linking group for linking an antibody targeting ligand (Ab) to a drug (D). Embodiments of such immunoconjugates are useful for delivering the drug to selected cells or tissues, e.g., for the treatment of cancer.Type: ApplicationFiled: October 2, 2023Publication date: March 7, 2024Inventors: Xiaojun Han, Suvi Tuula Marjukka Orr, Kevin Duane Bunker, Peter Qinhua Huang, Kimberlee Fischer
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Publication number: 20160211394Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof and each recess filled with a transparent material. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.Type: ApplicationFiled: March 28, 2016Publication date: July 21, 2016Inventors: Young-June Yu, Munib Wober, Peter Duane
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Patent number: 9299866Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof and each recess filled with a transparent material. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.Type: GrantFiled: December 30, 2010Date of Patent: March 29, 2016Assignee: ZENA TECHNOLOGIES, INC.Inventors: Young-June Yu, Munib Wober, Peter Duane
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Publication number: 20150214261Abstract: An optical apparatus, including an optical filter comprising an array of nanowires oriented perpendicular to a light incidence surface of the filter, wherein the optical filter transmits light at a first wavelength that is incident on the incidence surface, wherein the first wavelength is based on a cross-sectional shape of the nanowires. The nanowires are created using a single lithography step. An imaging device and a method of fabricating the same, the device including an array of nanowires formed on a substrate, wherein at least one nanowire in the array of nanowires includes a photoelectric element to produce a photocurrent based, at least in part, on incident photons absorbed by the at least one nanowire.Type: ApplicationFiled: August 12, 2013Publication date: July 30, 2015Applicants: President and Fellows of Harvard College, Zena Technologies, Inc.Inventors: Hyunsung Park, Yaping Dan, Kwanyong Seo, Young June Yu, Peter Duane, Munib Wober, Kenneth B. Crozier
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Publication number: 20150053860Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.Type: ApplicationFiled: September 30, 2014Publication date: February 26, 2015Inventors: Peter Duane, Young-June Yu, Munib Wober
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Patent number: 8889455Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.Type: GrantFiled: December 8, 2009Date of Patent: November 18, 2014Assignee: Zena Technologies, Inc.Inventors: Peter Duane, Young-June Yu, Munib Wober
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Patent number: 8890271Abstract: Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.Type: GrantFiled: December 13, 2010Date of Patent: November 18, 2014Assignees: Zena Technologies, Inc., President and Fellows of Harvard CollegeInventors: Turgut Tut, Peter Duane, Young-June Yu, Winnie N. Ye, Munib Wober, Kenneth B. Crozier
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Patent number: 8507840Abstract: An image sensor and methods of use the image sensor, methods of manufacturing the image sensor, and apparatuses comprising the image sensor are disclosed. The image sensor has pixels includes at least one nanopillar with a gate electrode surrounding the at least one nanopillar, wherein the at least one nanopillar is adapted to convert light impinging thereon to electrical signals and the gate electrode is operable to pinch off or allow current flow through the at least one nanopillar. The image sensor can have a plurality of pixels arranged in an individually addressable fashion. The at least one nanopillar has a cladding. A refractive index of the cladding being smaller than a refractive index of the nanopillar.Type: GrantFiled: December 21, 2010Date of Patent: August 13, 2013Assignee: Zena Technologies, Inc.Inventors: Young-June Yu, Peter Duane, Munib Wober
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Publication number: 20120168613Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof and each recess filled with a transparent material. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.Type: ApplicationFiled: December 30, 2010Publication date: July 5, 2012Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June YU, Munib Wober, Peter Duane
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Publication number: 20120153124Abstract: An image sensor and methods of use the image sensor, methods of manufacturing the image sensor, and apparatuses comprising the image sensor are disclosed. The image sensor has pixels includes at least one nanopillar with a gate electrode surrounding the at least one nanopillar, wherein the at least one nanopillar is adapted to convert light impinging thereon to electrical signals and the gate electrode is operable to pinch off or allow current flow through the at least one nanopillar. The image sensor can have a plurality of pixels arranged in an individually addressable fashion. The at least one nanopillar has a cladding. A refractive index of the cladding being smaller than a refractive index of the nanopillar.Type: ApplicationFiled: December 21, 2010Publication date: June 21, 2012Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June YU, Peter Duane, Munib Wober
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Publication number: 20120001284Abstract: Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.Type: ApplicationFiled: December 13, 2010Publication date: January 5, 2012Applicants: PRESIDENT AND FELLOWS OF HARVARD COLLEGE, ZENA TECHNOLOGIES, INC.Inventors: Turgut TUT, Peter Duane, Young-June Yu, Winnie N. Ye, Munib Wober, Kenneth B. Crozier
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Publication number: 20110136288Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.Type: ApplicationFiled: December 8, 2009Publication date: June 9, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Peter DUANE, Young-June Yu, Munib Wober
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Publication number: 20100304061Abstract: Methods, apparatuses, systems, and devices relating to the fabrication of features for semiconductor devices are disclosed. The features may include vias and pillars. In some implementations, the vias may define light pipes for semiconductor image sensor devices that serve to guide electromagnetic radiation directly down to photodiodes or other radiation detecting elements formed on an underlying silicon substrate. These structures significantly improve the light collection efficiency and reduce the scattering and crosstalk losses in the dielectric layer. An etch mask may be used to produce features through a subsequent etching process. More specifically, the etch mask defines sidewalls in the glass layer, provides excellent dry etch resistance, and enables easy lift-off of the etch mask from the glass layer. Two embodiments are disclosed herein: the first using amorphous silicon as the etch mask; and the second employing a photoresist as the etch mask.Type: ApplicationFiled: May 26, 2009Publication date: December 2, 2010Applicants: ZENA TECHNOLOGIES, INC., PRESIDENT AND FELLOWS OF HARVARD COLLEGEInventors: Winnie N. Ye, Kenneth B. Crozier, Peter Duane, Munib Wober