Abstract: A method includes, responsive to receiving a modified first reservation command from a storage controller, identifying, by a storage drive, a first range of storage based on a first range identifier of the modified reservation command. The method also includes granting, by the storage drive, a reservation for access to the storage drive on behalf of a first host controller by associating the reservation for the first range with a second range of storage.

Abstract: One or more performance parameters associated with data stored at a storage device of a plurality of storage devices are received by a storage controller. A first number of blocks of the storage device to a high resiliency portion and a second number of blocks of the storage device to a low resiliency portion of the storage device are allocated based on the one or more performance parameters.

Abstract: Characteristics associated with a device are received from the device. Firmware for the device is generated based on the received characteristics.

Abstract: A storage array controller may receive data to be programmed to a solid-state storage device of a plurality of solid-state storage devices. The storage array controller may identify a type of the data and determine whether to program the data to a low latency portion of the solid-state storage device based on the type of the data. In response to determining to program the data to the low latency portion of the solid-state storage device, the storage array controller may program the data to the low latency portion of the solid-state storage device.

Abstract: A system including embedded storage devices is described. A method of system operation includes determining, by a processing device of a storage system controller operatively coupled via a network to embedded storage devices, that data is to be stored in a first storage portion of a first storage device of the embedded storage devices. The method also includes buffering the data in a second storage portion of a second embedded storage device of the embedded storage devices.

Abstract: Multiple allocation units are selected from a set of solid state storage devices for storage of data. An erasure code and intra-device recovery data associated with the data are generated. The intra-device recovery data is written in each of the plurality of allocation units of the set of solid-state storage devices. The erasure code is written in a subset of the plurality of allocation units.

Abstract: A storage system has a first storage and a second storage. The first storage has a first plurality of blades with first computing resources, first RAM resources and first solid-state storage resources. The second storage has second plurality of blades with second computing resources, second RAM resources and second solid-state storage resources. The first computing resources and the second computing resources cooperate to determine on which blades of the first and second pluralities of blades, and in which storage of the first and second storage, to perform compute processes and memory controller processes, using which of the first and second computing resources.

Abstract: A system and method of uniform sampling in an append-only database to determine temporal distribution of data.

Abstract: A method includes, responsive to receiving a modified first reservation command from a storage controller, identifying, by a storage drive, a first range of storage based on a first range identifier of the modified reservation command. The method also includes granting, by the storage drive, a reservation for access to the storage drive on behalf of a first host controller by associating the reservation for the first range with a second range of storage.

Abstract: A first amount of energy to be stored at one or more power loss protection (PLP) components is determined to enable storage of data at a plurality of storage devices of a storage system upon an occurrence of a power failure. A first voltage is provided to the one or more PLP components that corresponds to the first amount of energy. A second amount of energy to be stored at the one or more PLP components is determined based on a change in the storage system. A second voltage is provided to the one or more PLP components that corresponds to the second amount of energy.

Abstract: A method for page writes for triple or higher level cell flash memory is provided. The method includes receiving data in a storage system, from a client that is agnostic of page write requirements for triple or higher level cell flash memory, wherein the page write requirements specify an amount of data and a sequence of writing data for a set of pages to assure read data coherency for the set of pages. The method includes accumulating the received data, in random-access memory (RAM) in the storage system to satisfy the page write requirements for the triple or higher level cell flash memory in the storage system. The method includes writing at least a portion of the accumulated data in accordance with the page write requirements, from the RAM to the triple level cell, or the higher level cell, flash memory in the storage system as an atomic write.

Abstract: A method includes, responsive to receiving a modified first reservation command from a storage controller, identifying, by a storage drive, a first range of storage based on a first range identifier of the modified reservation command. The method also includes granting, by the storage drive, a reservation for access to the storage drive on behalf of a first host controller by associating the reservation for the first range with a second range of storage.

Abstract: A system with storage memory and a processing device has a logical deletion to physical erasure time bound. The system dereferences data, responsive to a direction to delete the data. The system monitors physical blocks in storage memory for live data and the dereferenced data. The system cooperates garbage collection with monitoring the physical blocks, so that at least a physical block having the dereferenced data is garbage collected and erased within a logical deletion to physical erasure time bound.

Abstract: A method for page writes for triple or higher level cell flash memory is provided. The method includes receiving data in a storage system, from a client that is agnostic of page write requirements for triple or higher level cell flash memory, wherein the page write requirements specify an amount of data and a sequence of writing data for a set of pages to assure read data coherency for the set of pages. The method includes accumulating the received data, in random-access memory (RAM) in the storage system to satisfy the page write requirements for the triple or higher level cell flash memory in the storage system. The method includes writing at least a portion of the accumulated data in accordance with the page write requirements, from the RAM to the triple level cell, or the higher level cell, flash memory in the storage system as an atomic write.

Abstract: One or more performance parameters associated with data stored at a storage device of a plurality of storage devices are received by a storage controller. A first number of blocks of the storage device to a high resiliency portion and a second number of blocks of the storage device to a low resiliency portion of the storage device are allocated based on the one or more performance parameters.

Abstract: Data associated with a write request is stored at a storage device of multiple solid-state storage devices. A determination as to whether the data stored at the storage device is readable is made by determining whether a number of subsequent programming operations have been performed since the data was stored at the storage device. A notification that the stored data is readable from the storage device is generated upon determining that the data is readable.

Abstract: A command to relocate data is transmitted by a storage controller. The command includes first address information associated with a first set of blocks storing the data at one or more storage devices using a first programming mode and second address information associated with a second set of blocks at the one or more storage devices to store the relocated data using a second programming mode. The command causes the relocation of the data from the first set of blocks to the second set of blocks while bypassing sending the data to the storage controller. An acknowledgement is received that the relocated data has been stored at the second number of blocks.

Abstract: A read request with a high priority indication is received. A determination as to whether an in progress flash programming operation would delay processing the read request for a threshold amount of time is made. In response to determining that the in progress flash programming operation delays processing the read request for the threshold amount of time, the in progress flash programming operation is interrupted.

Abstract: In one implementation, a system resource is added to a storage system, for a resource-preserving upgrade. An upgrade component is coupled to the storage system as a temporary storage system shelf. Storage drives are moved from the storage system to the upgrade component. One or more storage controllers of the upgrade component are promoted to take over data services from the storage system.

Abstract: Multiple allocation units are selected from a set of solid state storage devices for storage of data. An erasure code and intra-device recovery data associated with the data are generated. The intra-device recovery data is written in each of the plurality of allocation units of the set of solid-state storage devices. The erasure code is written in a subset of the plurality of allocation units.