Abstract: The present invention relates to a method for determining the coordinates of an arbitrarily shaped pattern in a deflector system. The method basically comprises the steps of: moving the pattern in a first direction (X), calculating the position of the edge of the pattern by counting the number of micro sweeps, performed in a perpendicular direction (Y), until the edge is detected, and determining the coordinates by relating the number of counted micro sweeps to the speed of the movement of the pattern. The invention also relates to software implementing the method.

Abstract: The present invention relates to a method for determining the coordinates of an arbitrarily shaped pattern in a deflector system. The method basically comprises the steps of: moving the pattern in a first direction (X), calculating the position of the edge of the pattern by counting the number of micro sweeps, performed in a perpendicular direction (Y), until the edge is detected, and determining the coordinates by relating the number of counted micro sweeps to the speed of the movement of the pattern. The invention also relates to software implementing the method.

Abstract: An aspect of the present invention includes a method for patterning a workpiece covered at least partly with a layer sensitive to electromagnetic radiation by using a plurality of exposure beams having a predetermined separation in at least a first direction for exposing a pattern onto said workpiece, where said predetermined separation is fixed to an initial system pitch in said first direction, comprising the actions of: scaling a pattern pitch in said first direction to be an integer multiple of said system pitch, adjusting the initial system pitch in said first direction to be an adjusted system pitch to maintain a scale of said pattern, adjusting said predetermined separation of exposure beams to said adjusted system pitch.

Abstract: The present invention relates to a method for determining the coordinates of an arbitrarily shaped pattern in a deflector system. The method basically comprises the steps of: moving the pattern in a first direction (X), calculating the position of the edge of the pattern by counting the number of micro sweeps, performed in a perpendicular direction (Y), until the edge is detected, determining a correction function for the surface reflecting variations in a third direction (Z) perpendicular to both the first (X) and the second (Y) directions, and determining the coordinates by relating the number of counted micro sweeps to the speed of the movement of the pattern using the correction function to compensate for variations in the third direction. The invention also relates to software implementing the method.

Abstract: Methods and apparatuses for quality control and detecting errors related to the manufacturing and production of more accurate patterns and resultant devices are provided. The patterns or devices may include patterns used in display applications such as TFT-LCD, OLED, SED, PDP, FED, LTPS-LCD and similar display technologies using at least partially cyclical patterns.

Abstract: An aspect of the present invention includes a method for patterning a workpiece covered at least partly with a layer sensitive to electromagnetic radiation by using a plurality of exposure beams having a predetermined separation in at least a first direction for exposing a pattern onto said workpiece, where said predetermined separation is fixed to an initial system pitch in said first direction, comprising the actions of: scaling a pattern pitch in said first direction to be an integer multiple of said system pitch, adjusting the initial system pitch in said first direction to be an adjusted system pitch to maintain a scale of said pattern, adjusting said predetermined separation of exposure beams to said adjusted system pitch.

Abstract: The present invention relates to a method and a system for predicting and/or measuring and correcting geometrical errors in lithography using masks, such as large-area photomasks or reticles, and exposure stations, such as wafer steppers or projection aligners, printing the pattern of said masks on a workpiece, such as a display panel or a semiconductor wafer. A method to compensate for process variations when printing a pattern on a workpiece, including determining a two-dimensional CD profile in said pattern printed on said workpiece, generating a two-dimensional compensation file to equalize fluctuations in said two-dimensional CD-profile, and patterning a workpiece with said two-dimensional compensation file.

Abstract: A method may comprise emitting electromagnetic radiation onto a workpiece and storing data describing geometrical elements in a pattern. The electromagnetic radiation may be focused and/or reflected in a first direction, and a power level of the electromagnetic radiation may be modulated according to the stored data. A guiding rail may be moved in the first direction and a carriage may be moved in a second direction, each in one of a continuous and stepwise manner. The second direction may be substantially perpendicular to the first direction. A pattern may be exposed on the workpiece.

Abstract: The present invention relates to a method for determining the coordinates of an arbitrarily shaped pattern in a deflector system. The method basically comprises the steps of: moving the pattern in a first direction (X), calculating the position of the edge of the pattern by counting the number of micro sweeps, performed in a perpendicular direction (Y), until the edge is detected, and determining the coordinates by relating the number of counted micro sweeps to the speed of the movement of the pattern. The invention also relates to software implementing the method.

Abstract: The present invention relates to a method and a system for predicting and/or measuring and correcting geometrical errors in lithography using masks, such as large-area photomasks or reticles, and exposure stations, such as wafer steppers or projection aligners, printing the pattern of said masks on a workpiece, such as a display panel or a semiconductor wafer. A method to compensate for process variations when printing a pattern on a workpiece, including determining a two-dimensional CD profile in said pattern printed on said workpiece, generating a two-dimensional compensation file to equalize fluctuations in said two-dimensional CD-profile, and patterning a workpiece with said two-dimensional compensation file.

Abstract: A method may comprise emitting electromagnetic radiation onto a workpiece and storing data describing geometrical elements in a pattern. The electromagnetic radiation may be focused and/or reflected in a first direction, and a power level of the electromagnetic radiation may be modulated according to the stored data. A guiding rail may be moved in the first direction and a carriage may be moved in a second direction, each in one of a continuous and stepwise manner. The second direction may be substantially perpendicular to the first direction. A pattern may be exposed on the workpiece.

Abstract: An aspect of the present invention includes a method for patterning a workpiece covered at least partly with a layer sensitive to electromagnetic radiation by using a plurality of exposure beams having a predetermined separation in at least a first direction for exposing a pattern onto said workpiece, where said predetermined separation is fixed to an initial system pitch in said first direction, comprising the actions of: scaling a pattern pitch in said first direction to be an integer multiple of said system pitch, adjusting the initial system pitch in said first direction to be an adjusted system pitch to maintain a scale of said pattern, adjusting said predetermined separation of exposure beams to said adjusted system pitch. Other aspects of the present invention are reflected in the detailed description, figures and claims.

Abstract: The present invention relates to a pattern generating apparatus for writing a pattern on a surface of an object, comprising: a stage having an object having a thickness (T) being provided with a surface, said surface being divided into a number of measurement points, where two adjacent measurement points being spaced a distance apart not exceeding a predetermined maximum distance; means to determine the gradient of the surface at each measurement point; means to calculate a 2-dimensional local offset (d) in the x-y plane for each measurement point as a function of the gradient, and the thickness (T) of object; and means to correct the pattern to be written on said surface by using the 2-dimensional local offset (d). The invention also relates to an apparatus for measuring the physical properties of a surface.

Abstract: A method may comprise emitting electromagnetic radiation onto a workpiece and storing data describing geometrical elements in a pattern. The electromagnetic radiation may be focused and/or reflected in a first direction, and a power level of the electromagnetic radiation may be modulated according to the stored data. A guiding rail may be moved in the first direction and a carriage may be moved in a second direction, each in one of a continuous and stepwise manner. The second direction may be substantially perpendicular to the first direction. A pattern may be exposed on the workpiece.

Abstract: The present invention relates to a method for calibrating a metrology stage in at least two dimensions using an artefact plate having marks forming a pattern, comprising the steps of: placing the artefact plate on the metrology stage in at least three positions, assuming the geometrical properties of the metrology stage and the artefact plate, and the positions of the artefact plate for each measurement, forming a model predicting the measurements of the artefact plate, measuring the marks by the metrology stage, and inverting said model to improve the assumptions on metrology stage and artefact plate.

Abstract: An aspect of the present invention includes a method for patterning a workpiece covered at least partly with a layer sensitive to electromagnetic radiation by using a plurality of exposure beams having a predetermined separation in at least a first direction for exposing a pattern onto said workpiece, where said predetermined separation is fixed to an initial system pitch in said first direction, comprising the actions of: scaling a pattern pitch in said first direction to be an integer multiple of said system pitch, adjusting the initial system pitch in said first direction to be an adjusted system pitch to maintain a scale of said pattern, adjusting said predetermined separation of exposure beams to said adjusted system pitch. Other aspects of the present invention are reflected in the detailed description, figures and claims.

Abstract: The present invention relates to a method for calibrating a metrology stage in at least two dimensions using an artefact plate having marks forming a pattern, comprising the steps of: placing the artefact plate on the metrology stage in at least three positions, assuming the geometrical properties of the metrology stage and the artefact plate, and the positions of the artefact plate for each measurement, forming a model predicting the measurements of the artefact plate, measuring the marks by the metrology stage, and inverting said model to improve the assumptions on metrology stage and artefact plate.

Abstract: The present invention relates to a method for writing a pattern on a surface intended for use in exposure equipment, including the steps of: arranging an object having a thickness (T) provided with a surface on a stage of a pattern generating apparatus, dividing the surface into a number of measurement points, where two adjacent measurement points being spaced a distance (P) apart not exceeding a predetermined maximum distance, determining the gradient of the surface at each measurement point, calculating a 2-dimensional local offset (d) in the x-y plane for each measurement point as a function of the gradient, and the thickness (T) of object, and correcting the pattern to be written on said surface by using the 2-dimensional local offset (d). The invention also relates to a method for measuring the physical properties of a surface.

Abstract: The present invention relates to a method and a system for predicting and correcting geometrical errors in lithography using masks, such as large-area photomasks or reticles, and exposure stations, such as wafer steppers or projection aligners, printing the pattern of said masks on a workpiece, such as a display panel or a semi-conductor wafer. The method according to the invention comprises the steps of collecting information about a mask substrate, a mask writer, an exposure stati n, and/or about behavior of a processing step that will occur after the writing of the mask. Further the method comprises predicting from the combined information distorsions occuring in the pattern, when it is subsequently printed on the workpiece; calculating from said prediction a correction to diminish said predicted distorsion, and exposing said pattern onto said mask substrate while applying said correction for said distorsions.

Abstract: The present invention relates to a method and a system for producing large area display panels with improved precision. The system according to the invention comprises a first mask producing means (1) for producing a mask with a predetermined pattern according to input data and microlithographic exposing means (2) for exposing a photosensitive substrate with light and with use of a mask to impose the pattern of the mask on the substrate, whereby said substrate has a layer being sensitive to said light. Further, the system comprises measuring means (3) for measuring the pattern on the substrate and detecting deviations relative to the intended pattern as given by the input data, and second mask producing means (1) for producing a second mask according to second input data, and being controllable according to said measurement, to modify the pattern on the mask to compensate for the measured deviations, and thus compensate for production distortions.