Abstract: A method of manufacturing an electronic circuit (or circuit module) (100) is disclosed. The electronic circuit comprises a transistor (1) and a resistor (2), the transistor comprising a source terminal (11), a drain terminal (12), a gate terminal (13), and a first body (10) of material providing a controllable semi-conductive channel between the source and drain terminals, and the resistor comprises a first resistor terminal (21), a second resistor terminal (22), and a second body (20) of material providing a resistive current path between the first resistor terminal and the second resistor terminal. The method comprises: forming the first body (10); and forming the second body (20), wherein the first body comprises a first quantity (100) of a metal oxide and the second body comprises a second quantity (200) of said metal oxide. Corresponding electronic circuits are disclosed.

Abstract: A method of manufacturing an electronic circuit comprising a first device and at least a second device is disclosed. The first device comprises a first terminal, a second terminal, and a first body of semiconductive material providing a semiconductive path between the first and second terminals, and the second device comprises a third terminal, a fourth terminal, and a second body of material providing a resistive or semiconductive current path between the third terminal and the fourth terminal. The method comprises: forming the first body; and forming the second body, wherein the first body comprises a first quantity of a metal oxide and the second body comprises a second quantity of said metal oxide. Corresponding electronic circuits are disclosed.