Abstract: An apparatus is provided for cooling a sputtering target comprising a heat sink for the sputtering target. The heat sink is traversed by a cooling channel. The cooling channel includes a fluid. A cooling channel outlet is connected to an inlet of a compressor. An outlet of the compressor is connected to the inlet of a pressure stage by a second pipe, a first portion of which extends through a first heat exchanger; the outlet of the pressure stage is connected to the cooling channel inlet by a third pipe; the fluid is a refrigerant having a boiling point of 0° C. or less at a pressure of 1 bar and a boiling point of ?10° C. or less at a pressure of 0.7 bar; the pressure stage causes a pressure reduction of at least 2 bars on average from the pressure stage inlet to the pressure stage outlet.

Abstract: A method is provided for depositing a layer on a substrate inside a vacuum chamber by a magnetron sputtering device comprising at least two magnetron cathodes, each equipped with one target, at least one additional electrode, wherein a separate power supply unit is allocated to each magnetron cathode and wherein, in addition to at least one working gas, at least one reactive gas is introduced into the vacuum chamber. In a first phase, a pulsed negative direct current voltage is conducted from each power supply unit to the corresponding magnetron cathode, wherein the power supply units are operated in the push-pull mode. In a second phase, the pulsed direct current voltages provided by the power supply units are switched between the corresponding magnetron cathode and the additional electrode. An electric voltage is applied to the substrate or an electrode at the back of the substrate.

Abstract: A method for depositing a piezoelectric film may be provided containing AlN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AlN of formula AlXNYOZ, where (0.1?X?1.2); (0.1?Y?1.2) and (0.001?Z?0.1).

Abstract: A method is provided for depositing a layer on a substrate inside a vacuum chamber by a magnetron sputtering device comprising at least two magnetron cathodes, each equipped with one target, at least one additional electrode, wherein a separate power supply unit is allocated to each magnetron cathode and wherein, in addition to at least one working gas, at least one reactive gas is introduced into the vacuum chamber. In a first phase, a pulsed negative direct current voltage is conducted from each power supply unit to the corresponding magnetron cathode, wherein the power supply units are operated in the push-pull mode. In a second phase, the pulsed direct current voltages provided by the power supply units are switched between the corresponding magnetron cathode and the additional electrode. An electric voltage is applied to the substrate or an electrode at the back of the substrate.

Abstract: The invention relates to an electrically controlled interference colour filter comprising at least two transparent electrodes, at least one nematic liquid crystal layer and alignment layers for alignment of the liquid crystals. When an electrical field is applied the liquid crystals can be realigned and thus the transmission wavelength range of the interference colour filter can be shifted.

Abstract: A method for depositing a piezoelectric film may be provided containing AIN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AIN of formula AlXNYOZ, where (0.1?X?1.2); (0.1?Y?1.2) and (0.001?Z?0.

Abstract: In magnetron-type reactive sputtering the properties of the deposited layer are to remain constant throughout the entire use of a target, independey of the state of erosion, even after an exchange of targets. The method is also to be applicable for magnetron sputtering sources having a target consisting of several components with different partial discharge powers.Before sputtering of the substrates, the magnetic field strength associated with each partial target is set without reactive gas. Thereafter, a predetermined set of values of characteristic parameters is set by control of the reactive gas flow. During the subsequent sputtering the set of values predetermined for each partial target is kept constant by the controllable reactive gas flow. The first two steps are repeated at certain intervals in dependence of time the targets are used.Optical coatings or corrosion protection coatings may be fabricated by reactive sputtering in accordance with this method.

Abstract: A procedure and apparatus for the application of carbon layers using reactive magnetron sputtering is described. The process includes sputtering of at least two targets made of carbon in a reactive atmosphere with a pulsed energy feed. During a pattern period of the pulses all targets (magnetrons) are once switched on as an anode and at least one target is switched as an anode at all times Various embodiments include detection and limitation of the "microarcs"; executing of regeneration processes according to fixed predetermined time intervals for at least 5 seconds. In one embodiment a microarc is detected on a magnetron and if a next pulse-off time is more than a selected time period away, then the magnetron is connected to a positive pole of the power supply.

Abstract: A process and circuit for the bipolar pulse-shaped feeding of energy into low-pressure plasmas is provided. Within an average time period, a power which is to be as high as possible is to be fed into the low pressure discharge. In each polarization, the same power is to be fed although the impedance differs considerably. In a system for plasma and surface treatment techniques having at least two electrodes and one power supply, the outputs of at least two potential-free direct current supplies are switched such that an output of one direct current supply is conductively connected with an output of the same polarity of the other direct current supply. By means of a switch which is connected with each feed line to the electrodes and whose other outputs are led in a combined manner to the other outputs of the direct current source, these switches are operated via a timing generator in synchronism with the pole changing frequency. The switches are opened up in the event of the occurrence of an arcing.