Abstract: A shadow-masking process for manufacturing low dark current photodetectors with low noise characteristics is disclosed. The process includes shadow-masking a semiconductor wafer by positioning a patterned shadow-mask on a surface of the wafer. The shadow-mask is patterned with, for example, circular openings or stripe openings. Layers, such as metallization layers to form metallic contacts or anti-reflection layers are deposited onto the wafer through the patterned openings in the shadow-masks. This shadow-masking process may be used in the production of any semiconductor device requiring patterned layers.