Patents by Inventor Peter G. Flahive

Peter G. Flahive has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-power III-V semiconductor device
    Patent number: 4498093
    Abstract: III-V semiconductor devices such as, e.g., MESFET, JFET, MOSFET, and IGFET devices are provided with relatively high-ohmic gates or wide gate finger widths as is desirable for maximum utilization of a semiconductor surface. For example, aluminum gate electrodes having a cross-sectional area of 1.2 square micrometer and a length of 300 micrometers or more are used. The resulting devices have unexpectedly high power handling capability.
    Type: Grant
    Filed: September 14, 1981
    Date of Patent: February 5, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Christopher L. Allyn, Peter G. Flahive, David E. Iglesias, Wolfgang O. W. Schlosser, Stuart H. Wemple