Abstract: The resistance of a resistive memory element, e.g. a synaptic element is programmed, e.g. adjusted to a target value, by pulses of a constant height and variable width. One polarity gives an increase in resistance; the other polarity gives a decrease. A short pulse applied after a longer pulse appears to have no effect. After each polarity change short pulses can again be used to make small adjustments. In a preferred embodiment longer and longer pulses are used until the resistance overshoots the target value. After overshooting the polarity is reversed and a second series of pulses is used to obtain a closer approach to the target. The resistive element comprises a resistive layer located between two electrodes, e.g. a matrix of amorphous silicon doped with boron containing V. One electrode is Cr and the other is V.

Abstract: To provide for effective doping and obtain substantial conductivity change in amorphous semiconductor material, typically silicon, a body of said material is raised to a temperature above about 20.degree. C. and below the recrystallization temperature, for example in the range of between 100.degree. C., preferably above 200.degree.-250.degree. C. and below about 450.degree. C. during the ion implantation. The doping ions are, for example for silicon, of groups III and V of the periodic system, particularly boron and phosphorus. Semiconductor junctions can be made by this process by selectively doping spatially limited regions of the semiconductor body to thereby produce semiconductor components by doping with ions of different characteristics, for example of different conductivity type.