Patents by Inventor Peter G. McGrath

Peter G. McGrath has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
    Patent number: 7911034
    Abstract: A method for patterning CNTs on a wafer wherein a CNT layer is provided on a substrate, a hard mask film is deposited on the CNT layer, a BARC layer (optional) is coated on the hard mask film, and a resist is patterned on the BARC layer (or directly on the hard mask film if the BARC layer is not included). Then, the resist pattern is effectively transferred to the hard mask film by etching the BARC layer (if provided) and etching partly into, but not entirely through, the hard mask film (i.e., etching is stopped before reaching the CNT layer). Then, the resist and the BARC layer (if provided) is stripped, and the hard mask pattern is effectively transferred to the CNTs by etching away (preferably by using C1, F plasma) the portions of the hard mask which have been already partially etched away.
    Type: Grant
    Filed: May 22, 2009
    Date of Patent: March 22, 2011
    Assignee: Nantero, Inc.
    Inventors: Shiqun Gu, Peter G. McGrath, James Elmer, Richard J. Carter, Thomas Rueckes
  • NOVEL TECHNIQUES FOR PRECISION PATTERN TRANSFER OF CARBON NANOTUBES FROM PHOTO MASK TO WAFERS
    Publication number: 20090294754
    Abstract: A method for patterning CNTs on a wafer wherein a CNT layer is provided on a substrate, a hard mask film is deposited on the CNT layer, a BARC layer (optional) is coated on the hard mask film, and a resist is patterned on the BARC layer (or directly on the hard mask film if the BARC layer is not included). Then, the resist pattern is effectively transferred to the hard mask film by etching the BARC layer (if provided) and etching partly into, but not entirely through, the hard mask film (i.e., etching is stopped before reaching the CNT layer). Then, the resist and the BARC layer (if provided) is stripped, and the hard mask pattern is effectively transferred to the CNTs by etching away (preferably by using C1, F plasma) the portions of the hard mask which have been already partially etched away.
    Type: Application
    Filed: May 22, 2009
    Publication date: December 3, 2009
    Applicant: NANTERO, INC.
    Inventors: Shiqun GU, Peter G. MCGRATH, James ELMER, Richard J. CARTER, Thomas RUECKES
  • Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
    Patent number: 7538040
    Abstract: A method for patterning CNTs on a wafer wherein a CNT layer is provided on a substrate, a hard mask film is deposited on the CNT layer, a BARC layer (optional) is coated on the hard mask film, and a resist is patterned on the BARC layer (or directly on the hard mask film if the BARC layer is not included). Then, the resist pattern is effectively transferred to the hard mask film by etching the BARC layer (if provided) and etching partly into, but not entirely through, the hard mask film (i.e., etching is stopped before reaching the CNT layer) Then, the resist and the BARC layer (if provided) is stripped, and the hard mask pattern is effectively transferred to the CNTs by etching away (preferably by using Cl, F plasma) the portions of the hard mask which have been already partially etched away.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: May 26, 2009
    Assignee: Nantero, Inc.
    Inventors: Shiqun Gu, Peter G. McGrath, James Elmer, Richard J. Carter, Thomas Rueckes